Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("Couche inversion")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 1824

  • Page / 73
Export

Selection :

  • and

A comparison of MOS inversion layer charge and capacitance formulasBREWS, J. R.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 2, pp 182-187, issn 0018-9383Article

Oscillatory effects and the magnetic susceptibility of carriers in inversion layersBYCHKOV, Y. A; RASHBA, E. I.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 33, pp 6039-6045, issn 0022-3719Article

Intersubband spectroscopy and valley degeneracy of Si(110) and Si(111) n-type inversion layersCOLE, T; MCCOMBE, B. D.Physical review. B, Condensed matter. 1984, Vol 29, Num 6, pp 3180-3192, issn 0163-1829Article

Comment on: Interaction effects in conductivity of SI inversion layers at intermediate temperatures. Authors' repliesDAS SARMA, S; HWANG, E. H; PUDALOV, V. M et al.Physical review letters. 2004, Vol 93, Num 26, pp 269703.1-269705.1, issn 0031-9007, 1Article

Valley splitting in Si(100) n-channel inversion layers determined by a tilted field methodWAKABAYASHI, J; KIMURA, S; KAWAJI, S et al.Journal of the Physical Society of Japan. 1985, Vol 54, Num 10, pp 3885-3888, issn 0031-9015Article

Modeling the inversion layer at equilibriumJU, D.-H; WARNER, R. M. JR.Solid-state electronics. 1984, Vol 27, Num 10, pp 907-911, issn 0038-1101Article

Effects of effective potential on g-factor in Si inversion layersLEE, S. J; SHIN, H. J.Solid state communications. 1983, Vol 46, Num 1, pp 87-89, issn 0038-1098Article

Two-dimensional versus three-dimensional motion of inversion electrons in a magnetic fieldCRASEMANN, J. H; MERKT, U; KOTTHAUS, J. P et al.Physical review. B, Condensed matter. 1983, Vol 28, Num 4, pp 2271-2273, issn 0163-1829Article

Diffusion optique par la couche d'inversion du semiconducteur dans une structure MISPAVLOV, S. T; EHSHPULATOV, B. EH.Fizika tverdogo tela. 1986, Vol 28, Num 2, pp 389-393, issn 0367-3294Article

Maximum depletion width of MOS structures at high inversionLEHOVEC, K.Solid-state electronics. 1985, Vol 28, Num 5, pp 531-532, issn 0038-1101Article

Surface quantization effect on the macroscopic characteristics of semiconductor space-charge layersHARDALOV, C. M; VALCHEVA, E. P; GERMANOVA, K. G et al.Surface science. 1984, Vol 147, Num 1, pp 329-342, issn 0039-6028Article

A short comment on the modelling of the growth of atmospheric inversion layersLUPINI, R; PELLACANI, C; RAMBALDI, S et al.Archiv für Meteorologie, Geophysik und Bioklimatologie. Serie A, Meteorologie und Geophysik. 1984, Vol 33, Num 1, pp 49-53, issn 0066-6416Article

Conductivity near a mobility edge in 2D electronic systemsGHIBAUDO, G.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 17, pp 3067-3072, issn 0022-3719Article

Inversion-layer width, electron-electron interactions, and the fractional quantum Hall effectMACDONALD, A. H; AERS, G. C.Physical review. B, Condensed matter. 1984, Vol 29, Num 10, pp 5976-5978, issn 0163-1829Article

Thermal noise in inversion layersHAYAT, S. A; JONES, B. K.Solid-state electronics. 1984, Vol 27, Num 7, pp 687-688, issn 0038-1101Article

Inversion layer mobility of MOSFET's with nitrided oxide gate dielectricsSCHMIDT, M. A; TERRY, F. L. JR; MATHUR, B. P et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 10, pp 1627-1632, issn 0018-9383Article

Atmospheric dispersion evaluation under elevated inversion lidHUKKOO, R. K; BAPAT, V. N; SHIRVAIKAR, V. V et al.Atmospheric environment. 1985, Vol 19, Num 3, pp 529-531, issn 0004-6981Article

Microscopic theory of the supercurrent through the superconductor-inversion layer-superconductor junctionTANAKA, Y; TSUKADA, M.Solid state communications. 1987, Vol 61, Num 7, pp 445-449, issn 0038-1098Article

Magnétorésistance positive forte de la couche d'inversion électronique dans le domaine de conductivité par activationSEMENCHINSKIJ, S. G.Pis′ma v žurnal èksperimental′noj i teoretičeskoj fiziki. 1986, Vol 43, Num 10, pp 468-470, issn 0370-274XArticle

Resonant interaction of optical phonons with two-dimensional electron and hole space-charge layers on siliconHEITMANN, D; BATKE, E; WIECK, A. D et al.Physical review. B, Condensed matter. 1985, Vol 31, Num 10, pp 6865-6868, issn 0163-1829Article

Quantisierung des 2-dimensionalen Elektronengases in Inversionsschichten = Quantification d'un gaz d'électrons bidimensionnel dans une couche d'inversion = Bidimensional electron gas quantization in an inversion layerAUTH, J; HERRMANN, R.Annalen der Physik (Leipzig). 1985, Vol 42, Num 4-6, pp 347-370, issn 0003-3804Article

Self-consistent theory of the electronic structure of inversion layers. I: A new method using the modified local density approximationÜBENSEE, H; PAASCH, G; ZÖLLNER, J.-P et al.Physica status solidi. B. Basic research. 1985, Vol 130, Num 1, pp 387-402, issn 0370-1972Article

Ein objektiver Index für abgehobene Inversionen = An objective index of elevated inversionsSABO, P.Zeitschrift für Meteorologie. 1989, Vol 39, Num 4, pp 217-221, issn 0084-5361, 5 p.Article

Negative magnetoresistance and inelastic scattering time in Si-MOS inversion layersKAWAJI, S; KAWAGUCHI, Y.Journal of the Physical Society of Japan. 1984, Vol 53, Num 9, pp 2868-2871, issn 0031-9015Article

An analysis of temperatures and wind speeds above Dome C, AntarcticaARISTIDI, E; AGABI, K; ROTH, W. L et al.Astronomy and astrophysics (Berlin. Print). 2005, Vol 430, Num 2, pp 739-746, issn 0004-6361, 8 p.Article

  • Page / 73