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Results 1 to 25 of 852

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Light absorption coefficient in one model of semiconductor film with congruent surfacesBURDEYNYY, V; CHERNISH, V; JUNIOR DE LIMA, J. A et al.SPIE proceedings series. 2001, pp 369-373, isbn 0-8194-4136-8Conference Paper

Ordered nanocolumn-array organic semiconductor thin films with controllable molecular orientationBINGCHU YANG; HAICHAO DUAN; CONGHUA ZHOU et al.Applied surface science. 2013, Vol 286, pp 104-108, issn 0169-4332, 5 p.Article

The possibility of carbonyl fluoride as a new CVD chamber cleaning gasMITSUI, Yuki; OHIRA, Yutaka; YONEMURA, Taisuke et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 5, pp G297-G301, issn 0013-4651Article

Biomimetic fabrication of 3D structures by spontaneous folding of tapesBRUZEWICZ, Derek A; BONCHEVA, Mila; WINKLEMAN, Adam et al.Journal of the American Chemical Society. 2006, Vol 128, Num 29, pp 9314-9315, issn 0002-7863, 2 p.Article

An engineering approach to predict the polishing rate in CMP with rotational equipmentPING HSUN CHEN; SHIN, Han-C; BING WEI HUANG et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 10, pp G649-G651, issn 0013-4651Article

Observation of intermediate-range order in a nominally amorphous molecular semiconductor filmBLASINI, Daniel R; RIVNAY, Jonathan; SMILGIES, Detlef-M et al.Journal of material chemistry. 2007, Vol 17, Num 15, pp 1458-1461, issn 0959-9428, 4 p.Article

Calculation of refractive index of some materialsKHEDIM, S; CHIALI, A; BENYOUCEF, B et al.Revue des énergies renouvelables. 2007, pp 337-341, issn 1112-2242, 5 p., NSConference Paper

Planar inductively coupled BCl3 plasma etching of III-V semiconductorsLIM, W. T; BAEK, I. K; LEE, J. W et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 5, pp G343-G346, issn 0013-4651Article

A shallow and deep trench isolation process module for RF BiCMOSFORSBERG, Markus; JOHANSSON, Ted; WEI LIU et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 12, pp G839-G846, issn 0013-4651Article

Silver selenide nanowires by electrodepositionRUIZHI CHEN; DONGSHENG XU; GUOLIN GUO et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 3, pp G183-G186, issn 0013-4651Article

Via resistance reduction using cool PVD-Ta processingSEET, C. S; ZHANG, B. C; TAN, J. B et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 12, pp G766-G770, issn 0013-4651Article

Development and application of instrumental methods for strain analysis of semiconductor layers and devicesPAPADIMITRIOU, Dimitra; LIAROKAPIS, Efthymios; RICHTER, Wolfgang et al.Mikrochimica acta (1966. Print). 2001, Vol 136, Num 3-4, pp 165-169, issn 0026-3672Conference Paper

Low-resistance silicon-germanium contact technology for modular integration of MEMS with electronicsEYOUM, Marie-Ange; KING, Tsu-Jae.Journal of the Electrochemical Society. 2004, Vol 151, Num 3, pp J21-J25, issn 0013-4651Article

Ultraviolet emission in ZnO films controlled by point defectsLIN, Chin-Ching; HSIAO, Chi-Sheng; CHEN, San-Yuan et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 5, pp G285-G288, issn 0013-4651Article

Silicon etch rate using chlorine trifluorideHABUKA, Hitoshi; SUKENOBU, Takahiro; KODA, Hideyuki et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 11, pp G783-G787, issn 0013-4651Article

Surface roughness control of 3C-SiC films during the epitaxial growth processFU, Xiao-An; ZORMAN, Christian A; MEHREGANY, Mehran et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 12, pp G910-G914, issn 0013-4651Article

Doping technology for silicon thin films grown by temperature-modulation molecular layer epitaxyNISHIZAWA, Jun-Ichi; KURABAYASHI, Toru; OIZUMI, Toru et al.Journal of the Electrochemical Society. 2002, Vol 149, Num 7, pp G399-G402, issn 0013-4651Article

Statistical methods of investigations on the electrical properties of molybdenum disulphide intercalatesSIENICKI, W.Materials chemistry and physics. 2001, Vol 72, Num 3, pp 347-351, issn 0254-0584Article

Decay of silicon mounds : scaling laws and description with continuum step parametersICHIMIYA, A; HAYASHI, K; WILLIAMS, E. D et al.Applied surface science. 2001, Vol 175-76, pp 33-35, issn 0169-4332Conference Paper

Plasma-deposited hydrogenated carbon-germanium semiconducting films doped with acceptor and donor centersTYCZKOWSKI, J; KAZIMIERSKI, P; GRABKOWSKI, J et al.Surface & coatings technology. 2001, Vol 142-44, pp 792-796, issn 0257-8972Conference Paper

The performance of the dry roots pump DRYMAC in LP-CVD silicon nitride processKANKE, Yukio; TANAKA, Tomonari; AIKAWA, Junichi et al.Applied surface science. 2001, Vol 169-70, pp 777-780, issn 0169-4332Conference Paper

Micropatterning and transferring of polymeric semiconductor thin films by hot lift-off and polymer bonding lithography in fabrication of organic field effect transistors (OFETs) on flexible substrateXINHONG YU; ZHE WANG; SUNYANG YU et al.Applied surface science. 2011, Vol 257, Num 22, pp 9264-9268, issn 0169-4332, 5 p.Article

An ionic bottle for high-speed, long-retention memristive devicesSTRUKOV, Dmitri B; WILLIAMS, R. Stanley.Applied physics. A, Materials science & processing (Print). 2011, Vol 102, Num 4, pp 1033-1036, issn 0947-8396, 4 p.Article

Coplanar integration of lattice-mismatched semiconductors with silicon by wafer bonding Ge/Si1-xGex/Si virtual substratesPITERA, Arthur J; TARASCHI, G; LEE, M. L et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 7, pp G443-G447, issn 0013-4651Article

Properties of phosphorus-doped poly-SiGe films for microelectromechanical system applicationsJEON, Yoo-Chan; KING, Tsu-Jae; HOWE, Roger T et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 1, pp H1-H6, issn 0013-4651Article

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