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Results 1 to 25 of 1713

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Modulation of drain current by redox-active molecules incorporated in Si MOSFETsGOWDA, Srivardhan; MATHUR, Guru; QILIANG LI et al.International Electron Devices Meeting. 2004, pp 707-710, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

A new constant-current technique for MOSFET parameter extractionLU, Chao-Yang; COOPER, James A.Solid-state electronics. 2005, Vol 49, Num 3, pp 351-356, issn 0038-1101, 6 p.Article

Field-effect-transistor type C-reactive protein sensor using cysteine-tagged protein GSOHN, Y.-S; KIM, Y. T.Electronics Letters. 2008, Vol 44, Num 16, pp 955-956, issn 0013-5194, 2 p.Article

On the current saturation in low dimensional MOSFETsBENFDILA, A; BENSIDHOUM, M. T.International conference on microelectronics. 2004, isbn 0-7803-8166-1, 2Vol, vol 1, 299-302Conference Paper

Monolayer transistor using a highly ordered conjugated polymer as the channelCAMPBELL SCOTT, J; JEYAPRAKASH SAMUEL, J. D; HOU, Jennifer H et al.Nano letters (Print). 2006, Vol 6, Num 12, pp 2916-2919, issn 1530-6984, 4 p.Article

Unambiguous extraction of threshold voltage based on the ACM modelCUNHA, A. I. A; SCHNEIDER, M. C; GALUP-MONTORO, C et al.Proceedings - Electrochemical Society. 2004, pp 69-74, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper


Three-Terminal Nanoelectromechanical Field Effect Transistor with Abrupt Subthreshold SlopeKIM, Ji-Hun; CHEN, Zack C. Y; SOONSHIN KWON et al.Nano letters (Print). 2014, Vol 14, Num 3, pp 1687-1691, issn 1530-6984, 5 p.Article

In-Plane Gate Transistors With a 40-μm-Wide Channel WidthCHUNG, Tung-Hsun; LIN, Wei-Hsun; CHAO, Yi-Kai et al.IEEE electron device letters. 2012, Vol 33, Num 8, pp 1129-1131, issn 0741-3106, 3 p.Article

Large-Scale Graphene Micropatterns via Self-Assembly-Mediated Process for Flexible Device ApplicationKIM, Taeyoung; KIM, Hyeongkeun; SOON WOO KWON et al.Nano letters (Print). 2012, Vol 12, Num 2, pp 743-748, issn 1530-6984, 6 p.Article

A Compact Space and Efficient Drain Current Design for Multipillar Vertical MOSFETsSAKUI, Koji; ENDOH, Tetsuo.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 8, pp 1768-1773, issn 0018-9383, 6 p.Article

Depletion-isolation effect in vertical mosfets during the transition from partial to fully depleted operationHAKIM, M. M. A; DE GROOT, C. H; GILI, E et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 4, pp 929-933, issn 0018-9383, 5 p.Article

Study of the leakage drain current in graded-channel SOI nMOSFETs at high-temperaturesBELLODI, M; MARTINO, J. A.Proceedings - Electrochemical Society. 2003, pp 443-448, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Consistent model for drain current mismatch in mosfets using the carrier number fluctuation theoryKLIMACH, H; ARNAUD, A; SCHNEIDER, M. C et al.IEEE International Symposium on Circuits and Systems. 2004, pp 113-116, isbn 0-7803-8251-X, 4 p.Conference Paper

Analytical modeling of polysilicon TFT using charge sheet approachBINDRA, Simrata; HALDAR, Subhasis; GUPTA, R. S et al.SPIE proceedings series. 2002, pp 632-636, isbn 0-8194-4500-2, 2VolConference Paper

Nanoscale chemical sensors based on conjugated polymer transistorsLIANG WANG; FINE, Daniel; TAEHO JUNG et al.SPIE proceedings series. 2004, pp 81-88, isbn 0-8194-5460-5, 8 p.Conference Paper

Optimization of sub 100 nm Γ-gate Si-mosfets for RF applicationsGUPTA, Mayank; VIDYA, V; RAMGOPAL RAO, V et al.SPIE proceedings series. 2002, pp 652-656, isbn 0-8194-4500-2, 2VolConference Paper

Schottky junction transistors for micropower RFICsSPANN, J; ZHIYUAN WU; JACONELLI, P et al.Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium. 2002, pp 423-426, issn 1529-2517, isbn 0-7803-7246-8, 4 p.Conference Paper

A physical model for MOSFET drain current in non-ohmic regime using ohmic regime operationEL ABBASSI, A; AMHOUCHE, Y; RAÏS, K et al.Active and passive electronic components. 2001, Vol 24, Num 1, pp 23-29, issn 0882-7516Article

Drain Current Collapse in Nanoscaled Bulk MOSFETs Due to Random Dopant Compensation in the Source/Drain ExtensionsMARKOV, Stanislav; XINGSHENG WANG; MOEZI, Negin et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 8, pp 2385-2393, issn 0018-9383, 9 p.Article

CMOS multiplier based on the relationship between drain current and inversion chargeMACHADO, M. B; CUNHA, A. I. A; DE LACERDA, L. A et al.IET circuits, devices & systems (Print). 2009, Vol 3, Num 5, pp 239-247, issn 1751-858X, 9 p.Article

Nonuniform Mobility-Enhancement Techniques and Their Impact on Device PerformancePAYET, Fabrice; BOEUF, Frédéric; ORTOLLAND, Claude et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 4, pp 1050-1057, issn 0018-9383, 8 p.Article

A surface potential based subthreshold drain current model for short-channel MOS transistorsBAISHYA, S; MALLIK, A; SARKAR, C. K et al.Semiconductor science and technology. 2007, Vol 22, Num 9, pp 1066-1069, issn 0268-1242, 4 p.Article

Effect of channel-width widening on a poly-Si thin-film transistor structure in the linear regionCHANG, Kow-Ming; LIN, Gin-Ming.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 9, pp 2418-2425, issn 0018-9383, 8 p.Article

Analytic and explicit current model of undoped double-gate MOSFETsZHU, Z; ZHOU, X; RUSTAGI, S. C et al.Electronics Letters. 2007, Vol 43, Num 25, pp 1464-1466, issn 0013-5194, 3 p.Article

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