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Courants de fuite et échange thermique dans un électrodialyseurGREBENYUK, V. D; IVANOV, A. I.Žurnal prikladnoj himii. 1985, Vol 58, Num 8, pp 1784-1788, issn 0044-4618Article

Water droplet behavior and discharge activity on silicone rubber surface energized by AC voltage (Part II)MIZUNO, Y; KURA, N; GONZALEZ, A et al.CEIDP : conference on electrical insulation and dielectric phenomena. 2002, pp 351-354, isbn 0-7803-7502-5, 4 p.Conference Paper

Etude des propriétés électro-optiques de la structure oxyde/nitrure/oxyde (O.N.O.) : application aux mémoires EPROM et EEPROMEl Ghalbzouri, Hassan; Balland, Bernard.1988, 287 p.Thesis

Static electrification and partial discharges induced by oil flow in power transformersPEYRAQUE, L; BOISDON, C; BEROUAL, A et al.IEEE transactions on dielectrics and electrical insulation. 1995, Vol 2, Num 1, pp 40-45, issn 1070-9878Article

Punchthrough transient voltage suppressor for low-voltage electronicsYA-CHIN KING; BIN YU; POHLMAN, J et al.IEEE electron device letters. 1995, Vol 16, Num 7, pp 303-305, issn 0741-3106Article

Charle losses of N-doped trench cellsRISCH, L; MALY, R; BERGNER, W et al.Japanese journal of applied physics. 1988, Vol 27, Num 11, pp L2223-L2226, issn 0021-4922, part 2Article

Measurement of the quasi-static C-V curves of an MIS structure in the presence of charge leakageMONDERER, B; LAKHANI, A. A.Solid-state electronics. 1985, Vol 28, Num 5, pp 447-451, issn 0038-1101Article

Shelf-life evaluation of aluminium electrolytic capacitorsGREASON, W. D; CRITCHLEY, J.IEEE transactions on components, hybrids, and manufacturing technology. 1986, Vol 9, Num 3, pp 293-299, issn 0148-6411Article

Analysis of the soft reverse characteristics of n+p drain diodesTHEUNISSEN, M. J. J; LIST, F. J.Solid-state electronics. 1985, Vol 28, Num 5, pp 417-425, issn 0038-1101Article

Effect of annealing on the ac leakage components of the ZnO varistor. II, Capacitive currentGUPTA, T. K; STRAUB, W. D.Journal of applied physics. 1990, Vol 68, Num 2, pp 851-855, issn 0021-8979Article

Shielding of backgating effects in GaAs integrated circuitsLEE, C. P; CHANG, M. F.IEEE electron device letters. 1985, Vol 6, Num 4, pp 169-171, issn 0741-3106Article

Electrical properties of thin Ta2O5 films obtained by thermal oxidation of Ta on SiATANASSOVA, E; SPASSOV, D.International conference on microelectronic. 1997, pp 613-616, isbn 0-7803-3664-X, 2VolConference Paper

Les fuites de courant dans les dispositifs électrochimiques haute tension avec des paramètres distribués dans les circuits de shuntageKOSHEL, N. D.Èlektrohimiâ. 1984, Vol 20, Num 7, pp 879-882, issn 0424-8570Article

Innovations in polymer arrester moisture sealing testingBENNETT, J. A; MACKEVICH, J. P; MOSSO, R. J et al.IEEE transactions on power delivery. 1995, Vol 10, Num 1, pp 237-243, issn 0885-8977Conference Paper

Comparison of RTV silicone rubber coatings under artificial contamination in a fog chamberGORUR, R. S; KARADY, G. G; JAGOTA, A et al.IEEE transactions on power delivery. 1992, Vol 7, Num 2, pp 713-719, issn 0885-8977Conference Paper

Studies on structural, electrical and optical properties of multiferroic (Ag, Ni and In) codoped Bi0.9Nd0.1FeO3 thin filmsXU XUE; GUOQIANG TAN; GUOHUA DONG et al.Applied surface science. 2014, Vol 292, pp 702-709, issn 0169-4332, 8 p.Article

Characterization of leakage currents in long-lifetime capacitorsOUALID, J; AMMAR BOUHDADA.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 9, pp 1366-1370, issn 0018-9383Article

Measurement of MOS leakage conductance by means of the lateral photovoltaic effectSHIKAMA, T; NIU, H; TAKAI, M et al.Japanese journal of applied physics. 1985, Vol 24, Num 1, pp 45-50, issn 0021-4922Article

Personnel protection devices for use on apliancesLAROCCA, R. L.IEEE transactions on industry applications. 1992, Vol 28, Num 1, pp 233-238, issn 0093-9994Article

Tracking degradation and pyrolysis of EPDM insulatorsPEREIRA NUNES, S; DA COSTA, R. A; BARBOSA, S. P et al.IEEE transactions on electrical insulation. 1989, Vol 24, Num 1, pp 99-105, issn 0018-9367, 7 p.Article

Hot-electron-induced minority-carrier generation in bipolar junction transistorsISHIUCHI, H; TAMBA, N; SHOTT, J. D et al.IEEE electron device letters. 1990, Vol 11, Num 11, pp 490-492, issn 0741-3106, 3 p.Article

PROPOSED PROCESS MODIFICATIONS FOR DYNAMIC BIPOLAR MEMORY TO REDUCE EMITTER-BASE LEAKAGE CURRENTANTIPOV I.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 714-719; BIBL. 14 REF.Article

APPAREIL DE MESURE DES COURANTS DE FUITE DANS LES INSTALLATIONS D'ELECTROLYSEKOMLICHENKO OP; SHVETSOV NN; KARNAUSHENKO PA et al.1975; PROMYSHL. ENERGET.; S.S.S.R.; DA. 1975; NO 9; PP. 8-9; BIBL. 3 REF.Article

UTILISATION DE LA PROTECTION CONTRE LES COURANTS DE FUITE, DANS LES RESEAUX DE 380/220 VOLT, A NEUTRE SOUS-TERREOSLON AB.1974; PROMYSHL. ENERGET.; S.S.S.R.; DA. 1974; NO 9; PP. 21-23; BIBL. 3 REF.Article

UNE EXPERIENCE DE LUTTE CONTRE LES FUITES DE COURANTKOMLICHENKO OP; SHVETSOV NN; SHUTCHENKO VG et al.1975; PROMYSHL. ENERGET.; S.S.S.R.; DA. 1975; NO 2; PP. 8-10; BIBL. 3 REF.Article

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