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The Dark Current and Hot Pixel Percentage of James Webb Space Telescope 5 μm Cutoff HgCdTe Detector Arrays as Functions of TemperatureRAUSCHER, Bernard J; LINDLER, Don J; MOTT, David B et al.Publications of the Astronomical Society of the Pacific. 2011, Vol 123, Num 906, pp 953-957, issn 0004-6280, 5 p.Article

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Low-dark-current low-voltage 1.3-1.6 μm avalanche photodiode with high-low electric field profile and separate absorption and multiplication regions by molecular beam epitaxyCAPASSO, F; CHO, A. Y; FOY, P. W et al.Electronics Letters. 1984, Vol 20, Num 15, pp 635-637, issn 0013-5194Article

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Characterization of dark current non-uniformities in charge-coupled devicesVAN DER SPIEGEL, J; DECLERCK, G. J.Solid-state electronics. 1984, Vol 27, Num 2, pp 147-154, issn 0038-1101Article

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The reduction of Si diodes dark current for X-ray dosimetryAHMAD SHARIEF ODEH.International journal of radiation applications and instrumentation. Part C, Radiation physics and chemistry. 1994, Vol 44, Num 1-2, pp 57-59, issn 1359-0197Conference Paper

CONSTRAINING PERTURBATIVE EARLY DARK ENERGY WITH CURRENT OBSERVATIONSALAM, Ujjaini.The Astrophysical journal. 2010, Vol 714, Num 2, pp 1460-1469, issn 0004-637X, 10 p., 1Article

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Characterization of multicolor type-II InAs/GaSb strained-layer superlattice photodetectors for use in astronomical observationWONG, Andre F; NELSON, Matthew J; PLIS, Elena A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7742, issn 0277-786X, isbn 0-8194-8232-3 978-0-8194-8232-7, 774223.1-774223.10Conference Paper

Radiation hardness studies of InGaAs photodiodes at 30, 52, & 98 MeV and fluences to 10¹⁰ protons/cm²BAPTISTA, Brian J; MUFSON, Stuart L.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7742, issn 0277-786X, isbn 0-8194-8232-3 978-0-8194-8232-7, 774225.1-774225.11Conference Paper

A versatile wide dynamic range pixel with an improved low light sensitivityCHENG, Hsiu-Yu; COLLINS, Steve.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7113, issn 0277-786X, isbn 978-0-8194-7345-5 0-8194-7345-6, 1Vol, 71130F.1-71130F.9Conference Paper

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Field effect on the variable range hopping in amorphous materialsEMELIANOVA, E. V; ARKHIPOV, V. I; ADRIAENSSENS, G. J et al.International symposium on electrets. 1999, pp 59-62, isbn 0-7803-5025-1Conference Paper