Photocurrent theory based on coordinate dependent lifetimeULLRICH, Bruno; HAOWEN XI.Optics letters. 2010, Vol 35, Num 23, pp 3910-3912, issn 0146-9592, 3 p.Article

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The analysis of thin cylindrical symmetry lateral collection diodesWHITE, A. M.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 35, pp 6517-6521, issn 0022-3719Article

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Photoemission of electrons into electrolyte from underformed and plastically deformed indium electrodesDRAGON, R; WACKE, S; GORECKI, T et al.Journal of materials science letters. 1994, Vol 13, Num 23, pp 1670-1672, issn 0261-8028Article

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Purity-sensitive dark and photoconductivity in trans-polyacetyleneMIURA, M; KAMAGAMI, S.-I; TAKEZOE, H et al.Japanese journal of applied physics. 1983, Vol 22, Num 12, pp 1915-1919, issn 0021-4922Article

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