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Selective growth of carbon nanotubes on silicon protrusionsSATO, Hideki; HATA, Koichi; MIYAKE, Hideto et al.International Vacuum Nanoelectronics Conference. 2004, pp 210-211, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper

An integrated silicon colour sensor using selective epitaxial growthBARTEK, M; GENNISSEN, P. T. J; SARRO, P et al.Sensors and actuators. A, Physical. 1994, Vol 41, Num 1-3, pp 123-128, issn 0924-4247Conference Paper

Selective-area growth of GaN nanocolumns on titanium-mask-patterned silicon (111) substrates by RF-plasma-assisted molecular-beam epitaxyKISHINO, K; HOSHINO, T; ISHIZAWA, S et al.Electronics Letters. 2008, Vol 44, Num 13, pp 819-821, issn 0013-5194, 3 p.Article

Growth of aluminum on Si using dimethyl-ethyl amine alaneNEO, Y; NIWANO, M; MIMURA, H et al.Applied surface science. 1999, Vol 142, Num 1-4, pp 443-446, issn 0169-4332Conference Paper

Mechanisms and applications of selective area growth by metalorganic molecular beam epitaxy (CBE)HEINECKE, H; WACHTER, M.Applied surface science. 1997, Vol 113114, pp 1-8, issn 0169-4332Conference Paper

Fabrication of Ge-channel MOSFETs by using replacement gate process and selective epitaxial growthTERASHIMA, Koichi; TANABE, Akihito; NAKAGAWA, Takashi et al.Applied surface science. 2008, Vol 254, Num 19, pp 6165-6167, issn 0169-4332, 3 p.Conference Paper

Epitaxial growth of carbon caps on Ni for chiral selectivityREICH, S; LI, L; ROBERTSON, J et al.Physica status solidi. B. Basic research. 2006, Vol 243, Num 13, pp 3494-3499, issn 0370-1972, 6 p.Conference Paper

Fabrication of C60 nanostructures by selective growth on GaSe/MoS2 and InSe/MoS2 heterostructure substratesUENO, K; SASAKI, K; NAKAHARA, T et al.Applied surface science. 1998, Vol 130-32, pp 670-675, issn 0169-4332Conference Paper

MOCVD selective growth of orthorhombic or hexagonal YMnO3 phase on Si(100) substrateILIESCU, I; BOUDARD, M; RAPENNE, L et al.Applied surface science. 2014, Vol 306, pp 27-32, issn 0169-4332, 6 p.Conference Paper

Selective deposition of CVD iron on silicon dioxide and tungstenLOW, Y. H; BAIN, M. F; BIEN, D. C. S et al.Microelectronic engineering. 2006, Vol 83, Num 11-12, pp 2229-2233, issn 0167-9317, 5 p.Conference Paper

Building and testing organized architectures of carbon nanotubesVAJTAI, Robert; BINGQING WEI; YUNG JOON JUNG et al.IEEE transactions on nanotechnology. 2003, Vol 2, Num 4, pp 355-361, issn 1536-125X, 7 p.Conference Paper

Selective growth, characterization, and field emission performance of single-walled and few-walled carbon nanotubes by plasma enhanced chemical vapor depositionLOAN LONESCU, Mihnea; YONG ZHANG; RUYING LI et al.Applied surface science. 2011, Vol 258, Num 4, pp 1366-1372, issn 0169-4332, 7 p.Article

Leakage current study of Si1-xCx embedded source/drain junctionsSIMOEN, E; VISSOUVANADIN, B; LU, J. P et al.Applied surface science. 2008, Vol 254, Num 19, pp 6140-6143, issn 0169-4332, 4 p.Conference Paper

LIQUID PHASE EPITAXIAL GROWTH OF SILICON IN SELECTED AREASKIM HJ.1972; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1972; VOL. 119; NO 10; PP. 1394-1398; BIBL. 15 REF.Serial Issue

Selective Growth of Fullerenes from C60 to C70: Inherent Geometrical Connectivity Hidden in Discrete Experimental EvidenceWANG, Wei-Wei; DANG, Jing-Shuang; ZHENG, Jia-Jia et al.Journal of physical chemistry. C. 2013, Vol 117, Num 5, pp 2349-2357, issn 1932-7447, 9 p.Article

Synthesis and Structural Characterization of Single-Crystal K7.5Si46 and K17.8Si136 ClathratesSTEFANOSKI, Stevce; NOLAS, George S.Crystal growth & design. 2011, Vol 11, Num 10, pp 4533-4537, issn 1528-7483, 5 p.Article

High-density plane deposition kinetics and facet propagation in silicon-selective epitaxial growthLOUBET, Nicolas; TALBOT, Alexandre; DUTARTRE, Didier et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S149-S152Conference Paper

Vertical high-mobility wrap-gated InAs nanowire transistorBRYLLERT, Tomas; WERNERSSON, Lars-Erik; FRÖBERG, Linus E et al.IEEE electron device letters. 2006, Vol 27, Num 5, pp 323-325, issn 0741-3106, 3 p.Article

Formation of symmetric and asymmetric metal-semiconductor hybrid nanoparticlesMOKARI, T; COSTI, R; SZTRUM, C. G et al.Physica status solidi. B. Basic research. 2006, Vol 243, Num 15, pp 3952-3958, issn 0370-1972, 7 p.Conference Paper

Towards quantum dot-based photonic integrated circuitsFU, L; LEVER, P; MOKKAPATI, S et al.SPIE proceedings series. 2005, pp 41-48, isbn 0-8194-5703-5, 8 p.Conference Paper

Thermodynamic theory for efficiency of multiple impurity-atom doping in diamondMIYAZAKI, Takehide; YAMASAKI, Satoshi.Physica status solidi. A. Applied research. 2005, Vol 202, Num 11, pp 2134-2140, issn 0031-8965, 7 p.Conference Paper

Novel fabrication of 3-D microstructures by volume oxidation of AlGaAsHSU, Alan Y; CICH, Michael J; VAWTER, Gregory A et al.Lasers and Electro-optics Society. 2004, isbn 0-7803-8557-8, 2Vol, Vol1, 366-367Conference Paper

Selective MOCVD growth of ZnO nanotipsMUTHUKUMAR, Sriram; HAIFENG SHENG; JIAN ZHONG et al.IEEE transactions on nanotechnology. 2003, Vol 2, Num 1, pp 50-54, issn 1536-125X, 5 p.Article

Polymorphism in crystals: fundamentals, prediction and industrial practiceROGERS, R. D.Crystal growth & design. 2003, Vol 3, Num 6, issn 1528-7483, 195 p.Serial Issue

Molecular beam epitaxy growth mechanism and wire width control for formation of dense networks of narrow InGaAs quantum wiresCHAO JIANG; MURANAKA, Tsutomu; HASEGAWA, Hideki et al.Microelectronic engineering. 2002, Vol 63, Num 1-3, pp 293-299, issn 0167-9317Conference Paper

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