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Results 1 to 25 of 18980

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On the formation of large clusters of recombining particles of one kind in solids during reaction A+B=0ANTONOV-ROMANOVSKII, V. V.Physica status solidi. B. Basic research. 1984, Vol 125, Num 2, pp 517-521, issn 0370-1972Article

Lois d'héritage des défauts et de leurs densités dans les cristaux pour des déformations homogènes grandesSTREL'TSOV, V. A.Fizika tverdogo tela. 1985, Vol 27, Num 12, pp 3713-3715, issn 0367-3294Article

Defect concentration measurements in solids using a lyoluminescence methodAVOTINSH, YU. E; DZELME, YU. R; TILIKS, YU. YE et al.The International journal of applied radiation and isotopes. 1985, Vol 36, Num 10, pp 789-791, issn 0020-708XArticle

Reaction-rate approach to the dipolar relaxation in alkali halidesGEORGIEV, M; GOCHEV, A.Physical review. B, Condensed matter. 1985, Vol 31, Num 8, pp 5456-5461, issn 0163-1829Article

Kinetics of nucleation of clusters of defects in materials under continuous and cyclic irradiation conditionsRYAZANOV, A. I; SIDORENKO, A. D.Radiation effects. 1984, Vol 81, Num 1-2, pp 89-100, issn 0033-7579Article

Defect reactions on the phosphorus sublattice in low-temperature electron-irradiated InPSIBILLE, A; SUSKI, J.Physical review. B, Condensed matter. 1985, Vol 31, Num 8, pp 5551-5553, issn 0163-1829Article

Etude de la perfection cristalline des cristaux avec une distribution de défautsVORONKOV, S. N; CHUKHOVSKIJ, F. N; PISKUNOV, D. I et al.Fizika tverdogo tela. 1985, Vol 27, Num 6, pp 1911-1912, issn 0367-3294Article

Credibility of different calculational schemes for defects in semiconductors: their power and their limitsLANNOO, M.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 18, pp 3137-3156, issn 0022-3719Article

Compensation in GaAs crystals due to anti-structure disorderFIGIELSKI, T.Applied physics. A, Solids and surfaces. 1984, Vol 35, Num 4, pp 255-261, issn 0721-7250Article

Equilibration in defect clustering reactionsMOON, A. R; PHILIPS, M. R; BLAIR, D. G et al.Solid state communications. 1990, Vol 76, Num 7, pp 881-882, issn 0038-1098, 2 p.Article

Mouvement spontané d'inclusions liquides d'un cristal près de la surfaceSTARUKHINA, L. V; KRUZHANOV, V. S.Kristallografiâ. 1987, Vol 32, Num 4, pp 1068-1069, issn 0023-4761Article

A criterion for amorphization or transition to metastable states of highly defective solidsWAUTELET, M; ANTONIADIS, C; LAUDE, L. D et al.Physica status solidi. A. Applied research. 1985, Vol 92, Num 1, pp K43-k46, issn 0031-8965Article

Mouvement et croissance d'un macrodéfaut dans le champ des concentrations de défauts ponctuelsSLEZOV, V. V; TANATAROV, L. V.Metallofizika (Kiev). 1988, Vol 10, Num 2, pp 90-93, issn 0204-3580Article

Influence d'une couche de transition liquide entre le cristal et l'inclusion sur la vitesse du mouvementGEGUZIN, YA. E; KRUZHANOV, V. S; STARUKHINA, L. V et al.Kristallografiâ. 1985, Vol 30, Num 6, pp 1210-1212, issn 0023-4761Article

Vacancy-pair interaction potential in an equilibrium monatic solidBROOK-LEVINSON, E. T; CHERNETSOV, O. D.Physics letters. A. 1984, Vol 106, Num 7, pp 305-308, issn 0375-9601Article

Some remarks on domain structures generated by disclinationsLEONOV, I. A.Physics letters. A. 1990, Vol 145, Num 8-9, pp 449-450, issn 0375-9601Article

Material forces and configurational forces in the interaction of elastic singularitiesNABARRO, F. R. N.Proceedings of the royal society of London, series A : mathematical and physical sciences. 1985, Vol 398, Num 1815, pp 209-222, issn 0080-4630Article

On equilibrium configurations in continuum mechanics of structural defectsGUNTHER, H.Annalen der Physik (Leipzig). 1984, Vol 41, Num 6, pp 407-418, issn 0003-3804Article

Influence of the interaction potential on defect jumps in a Lennard-Jones latticeVOGELSANG, R; HOHEISEL, C.Journal of physics. C. Solid state physics. 1987, Vol 20, Num 35, pp 5933-5942, issn 0022-3719Article

The dynamic behaviour of a crystal during defect jumps. III: Distinct correlations during vacancy jumps from molecular dynamics calculationsVOGELSANG, R; HOHEISEL, C.Journal of physics. C. Solid state physics. 1987, Vol 20, Num 35, pp 5923-5931, issn 0022-3719Article

Catalytic oxidation of CO on Pt(111): the influence of surface defects and composition on the reaction dynamicsSEGNER, J; CAMPBELL, C. T; DOYEN, G et al.Surface science. 1984, Vol 138, Num 2-3, pp 505-523, issn 0039-6028Article

Interaction between boron and intrinsic defects in GaAsELLIOT, K. R.Journal of applied physics. 1984, Vol 55, Num 10, pp 3856-3858, issn 0021-8979Article

Influence des contraintes élastiques sur la transformation des amas de défauts dans les semiconducteursSKUPOV, V. D; TETEL'BAUM, D. I.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 8, pp 1495-1497, issn 0015-3222Article

Peculiarities of radiation defect formation and annealing in n-Si due to their interaction with each other and defect clustersLUGAKOV, P. F; LUKYANITSA, V. V.Physica status solidi. A. Applied research. 1984, Vol 84, Num 2, pp 457-464, issn 0031-8965Article


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