Lois d'héritage des défauts et de leurs densités dans les cristaux pour des déformations homogènes grandesSTREL'TSOV, V. A.Fizika tverdogo tela. 1985, Vol 27, Num 12, pp 3713-3715, issn 0367-3294Article

Defect concentration measurements in solids using a lyoluminescence methodAVOTINSH, YU. E; DZELME, YU. R; TILIKS, YU. YE et al.The International journal of applied radiation and isotopes. 1985, Vol 36, Num 10, pp 789-791, issn 0020-708XArticle

The effects of wafer to wafer defect density variations on integrated circuit defect and fault distributionsSTAPPER, C. H.IBM journal of research and development. 1985, Vol 29, Num 1, pp 87-97, issn 0018-8646Article

Calcul des capacités calorifiques de l'argon cristallin par la méthode de la dynamique moléculaire dans l'ensemble N, P, TASHUROV, A. K; ADKHAMOV, A. A.Žurnal fizičeskoj himii. 1985, Vol 59, Num 5, pp 1286-1287, issn 0044-4537Article

Etude du frottement interne de l'antimoniure d'indium contenant des densités variables de défautsMAKSIMYUK, P.A; FOMIN, A.V; GLEJ, V.A et al.Fizika tverdogo tela. 1989, Vol 31, Num 5, pp 292-294, issn 0367-3294Article

On a connection between vacancy formation parameters and melting process in rare gas solidsLAZARIDOU, M; EFTAXIAS, K.Physica status solidi. A. Applied research. 1985, Vol 90, Num 2, pp K147-K149, issn 0031-8965Article

Etude de la perfection cristalline des cristaux avec une distribution de défautsVORONKOV, S. N; CHUKHOVSKIJ, F. N; PISKUNOV, D. I et al.Fizika tverdogo tela. 1985, Vol 27, Num 6, pp 1911-1912, issn 0367-3294Article

Amorphization and regrowth in Si/CoSi₂/Si heterostructuresMAEX, K; WHITE, A. E; SHORT, K. T et al.Journal of applied physics. 1990, Vol 68, Num 11, pp 5641-5647, issn 0021-8979Article

Auto-oscillations de la température et de la densité des défauts dans des lames minces sous irradiationSELISHCHEV, P. A; SUGAKOV, V. I.Fizika tverdogo tela. 1988, Vol 30, Num 9, pp 2611-2615, issn 0367-3294Article

Connection between the formation volume and formation Gibbs energy in noble-gas solidsVAROTSOS, P; ALEXOPOULOS, K.Physical review. B, Condensed matter. 1984, Vol 30, Num 12, pp 7305-7306, issn 0163-1829Article

A criterion for amorphization or transition to metastable states of highly defective solidsWAUTELET, M; ANTONIADIS, C; LAUDE, L. D et al.Physica status solidi. A. Applied research. 1985, Vol 92, Num 1, pp K43-k46, issn 0031-8965Article

Identification of As_Ga antisite defects in liquid encapsulated Czochralski GaAsELLIOT, K; CHEN, R. T; GREENBAUM, S. G et al.Applied physics letters. 1984, Vol 44, Num 9, pp 907-909, issn 0003-6951Article

Photo-induced defects and photoconductivity in amorphous siliconOKAMOTO, H; KIDA, H; HAMAKAWA, Y et al.Solid state communications. 1984, Vol 49, Num 7, pp 731-733, issn 0038-1098Article

A disorder model of melting. II: Alkali halidesVAID, B. A; SHARMA, K. C; SYAL, V. K et al.Physica status solidi. B. Basic research. 1984, Vol 126, Num 1, pp 59-62, issn 0370-1972Article

Crystalline properties of multiple BP-Si layers grown on silicon substrateSUGIURA, S; YOSHIDA, T; KANEKO, Y et al.Journal of electronic materials. 1984, Vol 13, Num 6, pp 949-954, issn 0361-5235Article

Influence of distributed defects on the photoelectric characteristics of a large-area deviceSOPORI, B; WEI CHEN.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 375-378, issn 0022-0248Conference Paper

Interdiffusion in chalcogenide alloys with a high density of vacanciesLEUTE, V; STÜKEN, F; WEITZE, D et al.Berichte der Bunsen-Gesellschaft. 1997, Vol 101, Num 9, pp 1366-1371, issn 0940-483XConference Paper

Interval estimates for yield modelingWINTER, C. L; COOK, W. L.IEEE journal of solid-state circuits. 1986, Vol 21, Num 4, pp 590-591, issn 0018-9200Article

Interstitial and vacancy concentrations in the presence of interstitial injectionHU, S. M.Journal of applied physics. 1985, Vol 57, Num 4, pp 1069-1075, issn 0021-8979Article

THE RATE EQUATIONS USED IN IRRADIATION STUDIESGUROL H.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 15-18; BIBL. 20 REF.Article

INFLUENCE DE LA DEFORMATION PLASTIQUE SUR LA STRUCTURE DES SPECTRES DE PHOTOLUMINESCENCE DES MONOCRISTAUX DE CARBURE DE SILICIUMGORBAN IS; KRAVETS VA; MISHINOVA GN et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 11; PP. 2107-2110; BIBL. 8 REF.Article

THEORIE DES CASCADES D'IRRADIATION DANS LES CRISTAUX (SYMETRIE CYLINDRIQUE)TRUSHIN YU V.1977; TRUDY INST. FIZ. METALLOV, SVERDLOVSK; S.S.S.R.; DA. 1977; VOL. 34; PP. 66-80; BIBL. 21 REF.Article

REDUCTION DE LA CONCENTRATION DES DEFAUTS PONCTUELS INTRINSEQUES DANS LES CRISTAUXSABUROVA TN; INOZEMTSEV KI; TOMSON AS et al.1979; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; SUN; DA. 1979; VOL. 15; NO 9; PP. 1672-1674Article

DETERMINATION OF BREAKDOWN RATES AND DEFECT DENSITIES IN SIO₂SHATZKES M; AV RON M.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 91; NO 3; PP. 217-230; BIBL. 26 REF.Article

ORIENTATION DEPENDENCE OF OXIDATION STACKING FAULT DENSITY IN SILICONPEKAREV AI; KRASNOVA GF; NEMTSEV GZ et al.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 76; NO 1; PP. 327-330; ABS. RUS; BIBL. 7 REF.Article