A sturdy box design for sitting-drop crystallizationCHATTOPADHYAYA, R; GOSWAMI, B.Journal of applied crystallography. 1997, Vol 30, pp 182-183, issn 0021-8898, 2Article

Simple high conductance gas line for high growth rate and low transientBENCHIMOL, J. L; ANCILOTTI, M.Journal of crystal growth. 1996, Vol 164, Num 1-4, pp 22-27, issn 0022-0248Conference Paper

Nanospring formation-unexpected catalyst mediated growthMCILROY, D. N; ALKHATEEB, A; ZHANG, D et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 12, pp R415-R440, issn 0953-8984Article

Evidence of nanometer-sized charged carbon clusters in the gas phase of the diamond chemical vapor deposition (CVD) processHWANG, N. M.Journal of crystal growth. 1999, Vol 204, Num 1-2, pp 85-90, issn 0022-0248Article

From bunsen to VLSI : 150 years of growth in chemical vapor deposition technologyALLENDORF, M.The Electrochemical Society interface. 1998, Vol 7, Num 1, pp 36-39, issn 1064-8208, 3 p.Article

MOCVD of electroceramic oxides : A precursor manufacturer's perspectiveJONES, A. C.Chemical vapor deposition (Print). 1998, Vol 4, Num 5, pp 169-179, issn 0948-1907Article

The influence of catalyst particle size distribution on the yield of vapor-grown carbon fibers produced using the liquid pulse injection techniqueMUKAI, S. R; MASUDA, T; MATSUZAWA, Y et al.Chemical engineering science. 1998, Vol 53, Num 3, pp 439-448, issn 0009-2509Article

Gas-source growth of group IV semiconductors : II. Growth regimes and the effect of hydrogenOWEN, J. H. G; MIKI, K; BOWLER, D. R et al.Surface science. 1997, Vol 394, Num 1-3, pp 91-104, issn 0039-6028Article

The perfect nanotubeBALL, P.Nature (London). 1996, Vol 382, Num 6588, pp 207-208, issn 0028-0836Article

Chemical beam epitaxy : a child of surface scienceLÜTH, H.Surface science. 1994, Vol 299-300, Num 1-3, pp 867-877, issn 0039-6028Article

Formal order for search of the principle structure of multilayer coatings at heir designingVOEVODIN, A. A; EROKHIN, A. L; LYUBIMOV, V. V et al.Physica status solidi. A. Applied research. 1994, Vol 145, Num 2, pp 565-574, issn 0031-8965Article

Thermodynamic approach to the chemical vapor deposition processHWANG, N. M; YOON, D. Y.Journal of crystal growth. 1994, Vol 143, Num 1-2, pp 103-109, issn 0022-0248Article

Growth of bulk lead di-iodide crystals from the vapour phaseECKSTEIN, J; ERLER, B; EICHE, C et al.Journal of crystal growth. 1993, Vol 131, Num 3-4, pp 453-456, issn 0022-0248Article

Novel method for the growth of high quality cadmium telluride crystals for use in X-ray and gamma-ray sensorsCANTWELL, B. J; BRINKMAN, A. W; BASU, A et al.International Carnahan Conference on Security Technology. 2004, pp 351-354, isbn 0-7803-8506-3, 1Vol, 4 p.Conference Paper

Gas-source growth of group IV semiconductors : I. Si(001) nucleation mechanismsOWEN, J. H. G; MIKI, K; BOWLER, D. R et al.Surface science. 1997, Vol 394, Num 1-3, pp 79-90, issn 0039-6028Article

Dominant hydrocarbon which contributes to the growth of vapor grown carbon fibersMUKAI, S. R; MASUDA, T; HARADA, T et al.Carbon (New York, NY). 1996, Vol 34, Num 5, pp 645-648, issn 0008-6223Article

Chemical vapor deposition of hyperpure polysilicon on industrial scaleDOMENICI, M.Journal de physique. IV. 1995, Vol 5, Num 5, issn 1155-4339, p. C5.1099, 2Conference Paper

Confirmation of {113} facets on diamond grown by chemical vapor depositionSNAIL, K. A; LU, Z. P; WEIMER, R et al.Journal of crystal growth. 1994, Vol 137, Num 3-4, pp 676-679, issn 0022-0248Article

Ablazione e deposizione laser di materiali di interesse tecnologica = Laser ablation and deposition of materials with technological interestTEGHIL, R.La Chimica e l'industria (Milano). 2000, Vol 82, Num 2, issn 0009-4315, 132, 191-194 [5 p.]Article

Précurseurs « métalloorganiques » et dépôt chimique à partir d'une phase gazeuse = Metal-organic precursors and chemical vapor depositionVALADE, L; TEYSSANDIER, F.L' Actualité chimique (Paris. 1973). 1999, Num 2, pp 14-21, issn 0151-9093Article

Microstructure of nickel whiskers produced by the gas deposition methodICHIKI, M; AKEDO, J; MORI, K et al.Journal of materials science letters. 1997, Vol 16, Num 7, pp 531-533, issn 0261-8028Article

Graphite film formation by chemical vapor deposition on Ni coated sapphireYUDASAKA, M; KIKUCHI, R; MATSUI, T et al.Carbon (New York, NY). 1996, Vol 34, Num 6, pp 763-768, issn 0008-6223, 5 p.Article

Design of an elegant and inexpensive multiple target holder and laser beam scanner for use in laser-ablation deposition of thin filmsJACKSON, T. J; APPLEYARD, N. J; COOPER, M. J et al.Measurement science & technology (Print). 1995, Vol 6, Num 1, pp 128-130, issn 0957-0233Article

Mass flow controlled evaporation systemBOER, H. J.Journal de physique. IV. 1995, Vol 5, Num 5, pp C5.961-C5.966, issn 1155-4339, 2Conference Paper

Aerosol particles from bubblers in metalorganic vapor phase epitaxyDEPPERT, K; WIEDENSOHLER, A.Crystal research and technology (1979). 1994, Vol 29, Num 5, pp 613-616, issn 0232-1300Article