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A technique for crystal growing in a chamber furnaceCABRIC, B; PAVLOVIC, T; ZIZIC, B et al.Zeitschrift für Kristallographie. 1995, Vol 210, Num 1, issn 0044-2968, p. 56Article

Advanced sputtering techniques for high rate-, plasma free- deposition and excellent target utility with uniform erosionKADOKURA, S; NAOE, M.Vacuum. 1998, Vol 51, Num 4, pp 683-686, issn 0042-207XArticle

Making Co-crystals-The utility of ternary phase diagramsCHIARELLA, Renato A; DAVEY, Roger J; PETERSON, Matthew L et al.Crystal growth & design. 2007, Vol 7, Num 7, pp 1223-1226, issn 1528-7483, 4 p.Article

The perfect nanotubeBALL, P.Nature (London). 1996, Vol 382, Num 6588, pp 207-208, issn 0028-0836Article

New flexible reactor design for R&D PECVD deposition systemsARENDT, R; KAISER, M; BONTSCHEW, B et al.Surface & coatings technology. 1993, Vol 59, Num 1-3, pp 148-151, issn 0257-8972Conference Paper

Jan Czochralski-father of the Czochralski methodTOMASZEWSKI, Pawed E.Journal of crystal growth. 2002, Vol 236, Num 1-3, pp 1-4, issn 0022-0248Article

Twenty years of molecular beam epitaxyCHO, A. Y.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1-6, issn 0022-0248, 1Conference Paper

Lichtbogengestützte Beschichtung bandförmiger Materialen = Arc-assisted coating of ribbon-shaped materialsHASSE, B; MÜLLER, R; SIEFERT, W et al.Metalloberfläche. 1994, Vol 48, Num 6, pp 418-421, issn 0026-0797Article

Remote plasma-enhanced chemical vapor deposition with metal organic source gases : principles and applicationsKULISCH, W.Surface & coatings technology. 1993, Vol 59, Num 1-3, pp 193-201, issn 0257-8972Conference Paper

Chemical vapour deposition for optical fibre technologyCOGNOLATO, L.Journal de physique. IV. 1995, Vol 5, Num 5, pp C5.975-C5.987, issn 1155-4339, 2Conference Paper

CVD diamond films protect against wear and heatLU, G.Advanced materials & processes. 1993, Vol 144, Num 6, pp 42-43, issn 0882-7958Article

PVD-Anlagentechnik: Kathodische Vakuumbogen-Verdampfung = PVD deposition technique: Cathodic vacuum arc evaporationVETTER, J.Metalloberfläche. 1995, Vol 49, Num 7, pp 524-526, issn 0026-0797Article

Technological versions for diffusive metallizing by the PVDM element scheme methodSHISHKOV, R. I.Vacuum. 1995, Vol 46, Num 12, pp 1357-1360, issn 0042-207XArticle

Fast-growth technique for ice single crystalsKHUSNATDINOV, N. N; PETRENKO, V. F.Journal of crystal growth. 1996, Vol 163, Num 4, pp 420-425, issn 0022-0248Article

The fracture strength of nitrogen doped silicon wafersVEDDE, J; GRAVESEN, P.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 246-250, issn 0921-5107Conference Paper

Control of reactive d.c. magnetron sputtering of SnO2 by means of optical emissionKIRCHHOFF, V; HEISIG, U.Surface & coatings technology. 1993, Vol 59, Num 1-3, pp 101-104, issn 0257-8972Conference Paper

Thin copper films deposited by low temperature plasma-enhanced metal organic chemical vapour deposition using copper-acetylacetonateHAMERICH, A; LOTTERMOSER, L; MÜLLER, J et al.Surface & coatings technology. 1993, Vol 59, Num 1-3, pp 212-216, issn 0257-8972Conference Paper

Polymer-Induced Heteronucleation for Protein Single Crystal Growth: Structural Elucidation of Bovine Liver Catalase and Concanavalin A FormsFOROUGHI, Leila M; KANG, You-Na; MATZGER, Adam J et al.Crystal growth & design. 2011, Vol 11, Num 4, pp 1294-1298, issn 1528-7483, 5 p.Article

Processing and characterization of piezoelectric materials and integration into microelectromechanical systems : Metal OxidesPOLLA, D. L; FRANCIS, L. F.Annual review of materials science. 1998, Vol 28, pp 563-597, issn 0084-6600Article

A new technique for growing crystals from the vaporNELSON, J; KNIGHT, C. A.Journal of crystal growth. 1996, Vol 169, Num 4, pp 795-797, issn 0022-0248Article

Neue Dünnschichttechniken durch Molecular Engineering = New thin-layer techniques by molecular engineeringGRÄFE, A; KRUCK, T; KUREK, G et al.Metalloberfläche. 1994, Vol 48, Num 12, pp 894-896, issn 0026-0797Article

Crystals and patentsLARA-OCHOA, Francisco; ESPINOSA-PEREZ, Georgina.Crystal growth & design. 2007, Vol 7, Num 7, pp 1213-1215, issn 1528-7483, 3 p.Article

High-performance single-crystalline-silicon TFTs on a non-alkali glass substrateSANO, Yasuyuki; TAKEI, Michiko; HARA, Akito et al.IEDm : international electron devices meeting. 2002, pp 565-568, isbn 0-7803-7462-2, 4 p.Conference Paper

Influence of gas flow conditions on cluster size distribution in the gas evaporation methodKOGA, K; IKEDA, T; OHSHIMA, K.-I et al.Japanese journal of applied physics. 1997, Vol 36, Num 11, pp 7050-7051, issn 0021-4922, 1Article

Ion-beam assisted, electron-beam physical vapor depositionSINGH, J.Advanced materials & processes. 1996, Vol 150, Num 6, pp 27-28, issn 0882-7958Article

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