Fabrication et caractérisation de couches minces de Cu(Ga,In) (Se,Te)₂ par évaporation éclair = Fabrication and characterization of Cu(Ga,In) (Se,Te)₂ thin solid films by flash evaporationSudibyo, Uno Bintang; Guastavino, Francis; Gouskov, Alexandre et al.1991, 133 p.Thesis

Kinetics of recombination mechanism in graded gap CIGS solar cellsBHATNAGAR, Chhavi; KAPOOR, Avinashi.SPIE proceedings series. 2002, pp 98-101, isbn 0-8194-4500-2, 2VolConference Paper

Process development of high performance CIGS modules for mass productionPOWALLA, M; DIMMLER, B.Thin solid films. 2001, Vol 387, Num 1-2, pp 251-256, issn 0040-6090Conference Paper

Study of the effect of gallium grading in Cu(In, Ga)Se₂DULLWEBER, T; HANNA, G; SHAMS-KOLAHI, W et al.Thin solid films. 2000, Vol 361-62, pp 478-481, issn 0040-6090Conference Paper

Energy-gap variations in thin laser-deposited Cu(In, Ga)Se₂ filmsKINDYAK, A. S; KINDYAK, V. V; GREMENOK, V. F et al.Materials letters (General ed.). 1996, Vol 28, Num 4-6, pp 273-275, issn 0167-577XArticle

Structural and morphological properties of Cu(In, Ga)Se₂ thin films on Mo substrateCABALLERO, R; GUILLEN, C.Applied surface science. 2004, Vol 238, Num 1-4, pp 180-183, issn 0169-4332, 4 p.Conference Paper

Fermi level-dependent defect formation at Cu(In, Ga) Se₂ interfacesKLEIN, A; FRITSCHE, J; JAEGERMANN, W et al.Applied surface science. 2000, Vol 166, pp 508-512, issn 0169-4332Conference Paper

Preparation and characterization of electrodeposited CuGa_xIn_1-xSe₂ thin filmsMATSUOKA, T; NAGAHORI, Y; ENDO, S et al.Japanese journal of applied physics. 1994, Vol 33, Num 11, pp 6105-6110, issn 0021-4922, 1Article

Culn_1-xGa_xSe₂ thin films prepared by one step electrodepositionBOUABID, K; IHLA, A; MANAR, A et al.Journal de physique. IV. 2005, Vol 123, pp 53-57, issn 1155-4339, 5 p.Conference Paper

Characterization of Cu(In, Ga)Se₂ thin films prepared by thermal crystallization on Mo/glass substrateYAMAGUCHI, Toshiyuki; YAMAMOTO, Yukio; YOSHIDA, Akira et al.Solar energy materials and solar cells. 2001, Vol 67, Num 1-4, pp 77-82, issn 0927-0248Conference Paper

Design of grided Cu(In, Ga)Se₂ thin-film PV modulesWENNERBERG, Johan; KESSLER, John; STOLT, Lars et al.Solar energy materials and solar cells. 2001, Vol 67, Num 1-4, pp 59-65, issn 0927-0248Conference Paper

The performance of CuIn_1-xGa_xSe₂-based photovoltaic cells prepared from low-cost precursor filmsBHATTACHARYA, R. N; BATCHELOR, W; RAMANATHAN, K et al.Solar energy materials and solar cells. 2000, Vol 63, Num 4, pp 367-374, issn 0927-0248Article

Phase segregation, Cu migration and junction formation in Cu(In, Ga)Se₂HERBERHOLZ, R; RAU, U; SCHOCK, H. W et al.EPJ. Applied physics (Print). 1999, Vol 6, Num 2, pp 131-139, issn 1286-0042Article

Improvement of electrical yield in the fabrication of CIGS-based thin-film modulesKUSHIYA, K.Thin solid films. 2001, Vol 387, Num 1-2, pp 257-261, issn 0040-6090Conference Paper

Baseline Cu(In, Ga)Se₂ device production : Control and statistical significanceKESSLER, J; BODEGARD, M; HEDSTRÖM, J et al.Solar energy materials and solar cells. 2001, Vol 67, Num 1-4, pp 67-76, issn 0927-0248Conference Paper

Fabrication of Cu(In, Ga)Se₂ by in-line evaporation (composition monitoring method using heat radiation)SATOH, Takuya; HAYASHI, Shigeo; NISHIWAKI, Shiro et al.Solar energy materials and solar cells. 2001, Vol 67, Num 1-4, pp 203-207, issn 0927-0248Conference Paper

X-ray fluorescence investigation of the Ga distribution in Cu(In, Ga)Se₂ thin filmsALBERTS, V; KLENK, M; BUCHER, E et al.Solar energy materials and solar cells. 2000, Vol 64, Num 4, pp 371-383, issn 0927-0248Article

Plume expansion and stoichiometry in the growth of multi-component thin films using dual-laser ablationMUKHERJEE, P; CUFF, J. B; WITANACHCHI, S et al.Applied surface science. 1998, Vol 127-29, pp 620-625, issn 0169-4332Conference Paper

Characterization of p-CuGa_0.25In_0.75Se₂/Zn_0.35Cd_0.65S polycrystalline thin film heterojunctionsAPARNA, Y; SRINIVASULU NAIDU, B; JAYARAMA REDDY, P et al.Thin solid films. 1994, Vol 253, Num 1-2, pp 67-71, issn 0040-6090Conference Paper

Texture of Cu(In, Ga)Se₂ thin films and nanoscale cathodoluminescenceOTT, N; HANNA, G; RAU, U et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 2, pp S85-S89, issn 0953-8984Conference Paper

Chemical elaboration of well defined Cu(In, Ga)Se₂ surfaces after aqueous oxidation etchingCANAVA, B; GUILLEMOLES, J. F; VIGNERON, J et al.The Journal of physics and chemistry of solids. 2003, Vol 64, Num 9-10, pp 1791-1796, issn 0022-3697, 6 p.Conference Paper

Classification of metastabilities in the electrical characteristics of ZnO/CdS/Cu(In, Ga)Se₂ solar cellsZABIEROWSKI, P; RAU, U; IGALSON, M et al.Thin solid films. 2001, Vol 387, Num 1-2, pp 147-150, issn 0040-6090Conference Paper

CIGS solar cells on the way to mass production : Process statistics of a 30 cm x 30 cm module linePOWALLA, M; DIMMLER, B.Solar energy materials and solar cells. 2001, Vol 67, Num 1-4, pp 337-344, issn 0927-0248Conference Paper

Crystal growth and photoluminescence of CuIn_XGa_1-XSe₂ alloysYOSHINO, K; YOKOYAMA, H; MAEDA, K et al.Journal of crystal growth. 2000, Vol 211, Num 1-4, pp 476-479, issn 0022-0248Conference Paper

CuIn(Ga)Se₂-based devices via a novel absorber formation processBECK, M. E; SWARTZLANDER-GUEST, A; MATSON, R et al.Solar energy materials and solar cells. 2000, Vol 64, Num 2, pp 135-165, issn 0927-0248Article