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kw.\*:("Cuivre Indium Séléniure")

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Characterization of deep levels and interface states in CuInSe2HAAK, R; MENEZES, S; BACHMANN, K. J et al.Photovoltaic specialists conference. 19. 1987, pp 961-966Conference Paper

Thin film CuInSe2 photoelectrochemical cellsSZOT, J; HANEMAN, D.IEEE photovoltaic specialists conference. 18. 1985, pp 1735-1736Conference Paper

Photoluminescence of CuInSe2 and its intrinsic defect statesABOU-ELFOTOUH, F; ALKUHAIMI, S; MOUSTAFA, R et al.Photovoltaic specialists conference. 19. 1987, pp 770-774Conference Paper

Quality of CuInSe2 and CdS thin films for solar cellsDHERE, N. G; RIBAS, P. R. F; MOUTINHO, H. R et al.Photovoltaic specialists conference. 19. 1987, pp 1498-1499Conference Paper

Capacitance determination of interfacial states in CuInSe2 solar cellsTAVAKOLIAN, H; SITES, J. R.IEEE photovoltaic specialists conference. 18. 1985, pp 1065-1068Conference Paper

Defect levels in CdS/CulnSe2 thin-film solar cellsRAMANATHAN, V; NOUFI, R; POWELL, R. C et al.Journal of applied physics. 1988, Vol 63, Num 4, pp 1203-1206, issn 0021-8979Article

Soft X-ray photoemission investigation of the oxidation of CuInSe2 thin filmsZURCHER, P; NELSON, A. I; JOHNSSON, P et al.Photovoltaic specialists conference. 19. 1987, pp 955-960Conference Paper

Admittance spectroscopy and application to Cu In Se2 photovoltaic devicesFABICK, L. B; ESKENAS, K. L.IEEE photovoltaic specialists conference. 18. 1985, pp 754-757Conference Paper

Reflection loss from polycrystalline CuInSe2 solar cellsSITES, J. R; MAUK, P. H; JACOBSON, R. D et al.Photovoltaic specialists conference. 19. 1987, pp 818-822Conference Paper

Characteristics of preliminary cells fabricated using electro-deposited CuInSe2 filmsSHIH, I; QIU, C. X.Photovoltaic specialists conference. 19. 1987, pp 1291-1294Conference Paper

CuInSe2 Photovoltaic devices prepared by reactive sputteringLOMMASSON, T. C; TALIEH, H; MEAKIN, J. D et al.Photovoltaic specialists conference. 19. 1987, pp 1285-1290Conference Paper

Tolerance of CuInSe2 cell performance to variations in film composition and the implications for large area cell manufactureROCHELEAU, R. E; MESKIN, J. D; BIRKMIRE, R. W et al.Photovoltaic specialists conference. 19. 1987, pp 972-976Conference Paper

Modelling of CdS/CuInSe2 solar cellsYAHIA, A. H; SHAALAN, N. M; SHAALAN, M. S et al.Photovoltaic specialists conference. 19. 1987, pp 222-226Conference Paper

Thin film tandem GaAs/CuInSe2 solar cells for space power applicationsSTANBERY, B. J; AVERY, J. E; FAN, J. C. C et al.Photovoltaic specialists conference. 19. 1987, pp 280-284Conference Paper

Current/voltage characteristic of CuInSe2 homojunctionsSHIH, I; QIU, C. X.Electronics Letters. 1985, Vol 21, Num 8, pp 350-351, issn 0013-5194Article

CdTe/CdS devices for tandem solar cells based on CuInSe2BIRKMIRE, R. W; DINETTA, L. C; JACKSON, S. C et al.IEEE photovoltaic specialists conference. 18. 1985, pp 1413-1416Conference Paper

Development of CuInSe2 cells for space applicationsMICKELSEN, R. A; CHEN, W. S; STANBERY, B. J et al.IEEE photovoltaic specialists conference. 18. 1985, pp 1069-1073Conference Paper

An admittance study of the CuInSe2/CdS solar cellDEMETRIOU, E. C; ROTHWARF, A.Photovoltaic specialists conference. 19. 1987, pp 764-769Conference Paper

The effect of composition of on the optical properties of CuInSe2 thin filmsTUTTLE, J. R; NOUFI, R; DHERA, R. G et al.Photovoltaic specialists conference. 19. 1987, pp 1494-1495Conference Paper

CuInSe2/CDS. Modeling and analysisROTHWARF, A.IEEE photovoltaic specialists conference. 18. 1985, pp 1423-1428Conference Paper

SPACE-CHARGE-LIMITED CURRENT EFFECTS IN N-TYPE CUINSE2/AU SCHOTTKY DIODESYALCIN N; AL SAFFAR IS; TOMLINSON RD et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 9; PP. 5857-5858; BIBL. 11 REF.Article

THEORETICAL LIMIT EFFICIENCY OF DIRECT GAP SOLAR CELLSSPITZER M; LOFERSKI JJ; SHEWCHUN J et al.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 585-590; BIBL. 13 REF.Conference Paper

TWO-PHONON ABSORPTION SPECTRA IN CUINSE2SOBOTTA H; NEUMANN H; KISSINGER W et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 103; NO 2; PP. K125-K129; BIBL. 13 REF.Article

The Meyer-Neldel rule in emission rates from defects in copper indium diselenideSHAPIRO, F. R; TUTTLE, J. R.Solid state communications. 1993, Vol 87, Num 3, pp 199-202, issn 0038-1098Article

Anodic oxidation of copper indium diselenide thin filmsMAMA ZOUAD SARDI; VEDEL, J.Thin solid films. 1991, Vol 204, Num 1, pp 185-191, issn 0040-6090Article

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