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Effective simulation of the effect of a transverse magnetic field (TMF) in Czochralski Silicon growthCOLLET, Yoan; MAGOTTE, Olivier; VAN DEN BOGAERT, Nathalie et al.Journal of crystal growth. 2012, Vol 360, pp 18-24, issn 0022-0248, 7 p.Conference Paper

The historical development of the Czochralski methodUECKER, Reinhard.Journal of crystal growth. 2014, Vol 401, pp 7-24, issn 0022-0248, 18 p.Conference Paper

Growth, spectral properties, and laser demonstration of Nd:(Lu0.5Gd0.5)2SiO5 crystalLI, D. Z; XU, X. D; XU, J et al.Laser physics letters (Print). 2011, Vol 8, Num 9, pp 647-652, issn 1612-2011, 6 p.Article

Electron-beam-induced current and photoetching investigations of dislocations and impurity atmospheres in n-type liquid-encapsulated Czochralski GaAsFRIGERI, C; WEYHER, J. L.Journal of applied physics. 1989, Vol 65, Num 12, pp 4646-4653, issn 0021-8979, 8 p.Article

Cavities to hydrogen in Si single crystals grown by continuously charging CZ methodIINO, E; TAKANO, K; KIMURA, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 146-149, issn 0921-5107Conference Paper

Nonlinear model-based control of the Czochralski process II: Reconstruction of crystal radius and growth rate from the weighing signalWINKLER, J; NEUBERT, M; RUDOLPH, J et al.Journal of crystal growth. 2010, Vol 312, Num 7, pp 1019-1028, issn 0022-0248, 10 p.Article

Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growthZHANG ZHICHENG; REN BINGYAN; CHEN YONGHAIA et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 504-509, issn 0167-9317, 6 p.Conference Paper

Comportement de la vitesse de cristallisation lors de fluctuations de la température du bain fondu dans la méthode de CzochralskiAMYAN, A. L; NALBANDYAN, O. G.Fizika i himiâ obrabotki materialov. 1983, Num 1, pp 73-77, issn 0015-3214Article

A new hybrid method for the global modeling of convection in CZ crystal growth configurationsFAINBERG, J; VIZMAN, D; FRIEDRICH, J et al.Journal of crystal growth. 2007, Vol 303, Num 1, pp 124-134, issn 0022-0248, 11 p.Conference Paper

A NEW DESIGN FOR WATER COOLED CZOCHRALSKI SEED HOLDERSINGH AJ.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 51; NO 3; PP. 635-636; BIBL. 4 REF.Article

AN ELLIPSOIDAL MIRROR FURNACE FOR CZOCHRALSKI GROWTHRIVEROS HG; CORY WK; TOCA R et al.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 49; NO 1; PP. 85-89; BIBL. 6 REF.Article

Stress-induced oxygen precipitation in Cz-SiMISIUK, A; SURMA, B; HARTWIG, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 30-32, issn 0921-5107Conference Paper

Developments in Czochralski silicon crystal growthMOODY, J. W; FREDERICK, R. A.Solid state technology. 1983, Vol 26, Num 8, pp 221-225, issn 0038-111XArticle

Influence of oxygen on the recombination strength of dislocations in silicon wafersSIMON, J. J; PERICHAUD, I.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 183-186, issn 0921-5107Conference Paper

The effect of ultrahigh magnetic fields on dopant distribution in CZ systems: a modeling study and comparison with asymptotic solutionsILEGBUSI, O. J; SZEKELY, J.Metallurgical transactions. A, Physical metallurgy and materials science. 1989, Vol 20, Num 9, pp 1637-1646, issn 0360-2133, 10 p.Article

Radiation view factors in Czochralski crystal growth apparatus for short crystalsSRIVASTAVA, R. K; RAMACHANDRAN, P. A; DUDUKOVIC, M. P et al.Journal of crystal growth. 1986, Vol 74, Num 2, pp 281-291, issn 0022-0248Article

Precise evaluation of oxygen measurements on CZ-silicon wafersGRAFF, K.Journal of the Electrochemical Society. 1983, Vol 130, Num 6, pp 1378-1381, issn 0013-4651Article

Contrôle du processus de croissance des cristaux par la méthode de Czochralski en modifiant la vitesse du tirageNALBANDYAN, O. G.Kristallografiâ. 1984, Vol 29, Num 3, pp 620-621, issn 0023-4761Article

Evaluation of the quality of HMCZ Si single crystals with a diameter of 200 mmIINO, E; TAKANO, K; KIMURA, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 142-145, issn 0921-5107Conference Paper

GSAG and YSAG : a study on isomorphism and crystal growthLUTTS, G. B; DENISOV, A. L; ZHARIKOV, E. V et al.Optical and quantum electronics. 1990, Vol 22, pp S269-S281, issn 0306-8919, NSArticle

Conditions of existence and character of the temperature fluctuations during Czochralski growth of oxide single crystalsILIEV, K; BERKOWSKI, M; NIKOLOV, V et al.Journal of crystal growth. 1991, Vol 108, Num 1-2, pp 219-224, issn 0022-0248Article

A new design for a UHV compatible Czochralski crystal growth systemBROWN, S. A; HOWARD, B. K; BROWN, S. V et al.Review of scientific instruments. 1990, Vol 61, Num 9, pp 2427-2429, issn 0034-6748Article

Contraintes thermoélastiques dans les cristaux obtenus par la méthode de CzochralskiTIMAN, B. L; FESENKO, V. M.Fizika i himiâ obrabotki materialov. 1984, Num 5, pp 19-22, issn 0015-3214Article

Dislocation density control in high-purity germanium crystal growthGUOJIAN WANG; YUTONG GUAN; HAO MEI et al.Journal of crystal growth. 2014, Vol 393, pp 54-58, issn 0022-0248, 5 p.Conference Paper

Combined-convection segregation coefficient and related Nusselt numbersOSTROGORSKY, A. G.Journal of crystal growth. 2013, Vol 380, pp 43-50, issn 0022-0248, 8 p.Article

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