Pascal and Francis Bibliographic Databases

Help

Search results

Your search

au.\*:("D'HEURLE F")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 96

  • Page / 4
Export

Selection :

  • and

INTERACTIONS BETWEEN CR AND PT FILMS: NEW CR-PT PHASESBAGLIN J; D'HEURLE F; ZIRINSKY S et al.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 11; PP. 1854-1859; BIBL. 24 REF.Article

Diffusion-reaction : the oxidation of silicides in electronics and elsewhereD'HEURLE, F. M.Journal de physique. III (Print). 1995, Vol 5, Num 11, pp 1707-1728, issn 1155-4320Conference Paper

Formation and oxidation mechanisms in two semiconducting silicidesD'HEURLE, F. M.Thin solid films. 1987, Vol 151, Num 1, pp 41-50, issn 0040-6090Article

A note on solid-state reaction kinetics: the formation of silicides from thin films of metallic alloys = Note sur les cinétiques de réaction à l'état solide: formation de siliciures à partir de couches minces d'alliages métalliquesD'HEURLE, F. M.Journal of applied physics. 1985, Vol 57, Num 6, pp 2311-2313, issn 0021-8979Article

OXIDATION OF SILICIDE THIN FILMS: TISI2D'HEURLE F; IRENE EA; TING CY et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 4; PP. 361-363; BIBL. 15 REF.Article

Formation of a new phase from chemical interactions at an interface : nucleation controlD'HEURLE, F. M.Journal de physique. Colloques. 1990, Vol 1, pp C1.803-C1.808, issn 0449-1947Conference Paper

Thermal formation of SiO2 films over NiSi, NiSi2 and CoSi2 via silicide decompositionD'HEURLE, F. M.Thin solid films. 1983, Vol 105, Num 3, pp 285-292, issn 0040-6090Article

Reactive diffusion in a prototype system : nickel-aluminum. II : The ordered Cu3Au rule and the sequence of phase formation, nucleationD'HEURLE, F. M; GHEZ, R.Thin solid films. 1992, Vol 215, Num 1, pp 26-34, issn 0040-6090Article

DIFFUSION IN INTERMETALLIC COMPOUND WITH THE CAF2 STRUCTURE: A MARKER STUDY OF THE FORMATION OF NISI2 THIN FILMS = DIFFUSION DANS UN COMPOSE INTERMETALLIQUE DE STRUCTURE CAF2: UNE ETUDE PAR MARQUEUR DE LA FORMATION DE COUCHES MINCES NISI2D'HEURLE F; PETERSSON S; STOLT L et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 8; PP. 5678-5681; BIBL. 22 REF.Article

The formation of Cu3Si : marker experimentsSTOLT, L; D'HEURLE, F. M.Thin solid films. 1990, Vol 189, Num 2, pp 269-274, issn 0040-6090, 6 p.Article

Reactive diffusion in a prototype system : nickel-aluminum. I: Non-constant diffusion coefficientD'HEURLE, F. M; GHEZ, R.Thin solid films. 1992, Vol 215, Num 1, pp 19-25, issn 0040-6090Article

OXIDATION MECHANISMS IN WSI2 THIN FILMS.ZIRINSKY S; HAMMER W; D'HEURLE F et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 1; PP. 76-78; BIBL. 9 REF.Article

NUCLEATION-CONTROLLED THIN-FILM INTERACTIONS: SOME SILICIDES = INTERACTIONS DE COUCHES MINCES A NUCLEATION CONTROLEE: QUALQUES SILICIURESANDERSON R; BAGLIN J; DEMPSEY J et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 3; PP. 285-287; BIBL. 13 REF.Article

The kinetics of oxidation : refinements for silicides, silicon and other materialsZHANG, S.-L; D'HEURLE, F. M.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1992, Vol 66, Num 3, pp 415-424, issn 0141-8610Article

Oxidation of titanium, manganese, iron, and niobium silicides : marker experimentsSTOLT, L; THOMAS, O; D'HEURLE, F. M et al.Journal of applied physics. 1990, Vol 68, Num 10, pp 5133-5139, issn 0021-8979Article

Transmission electron microscope study of the initial stage of formation of Pd2Si and Pt2SiABOELFOTOH, M. O; ALESSANDRINI, A; D'HEURLE, F. M et al.Applied physics letters. 1986, Vol 49, Num 19, pp 1242-1244, issn 0003-6951Article

IRSI1.75 A NEW SEMICONDUCTOR COMPOUNDPETERSSON S; REIMER JA; BRODSKY MH et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 4; PP. 3342-3343; BIBL. 15 REF.Article

Formation of a C49 TiGe2 phase during annealing a coevaporated Ti0.33Ge0.67 alloyHONG, Q. Z; BARMAK, K; D'HEURLE, F. M et al.Applied physics letters. 1993, Vol 62, Num 26, pp 3435-3437, issn 0003-6951Article

Formation of thin films of CoSi2: nucleation and diffusion mechanisms = Formation de couches minces de CoSi2: mécanismes de germination et de diffusionD'HEURLE, F. M; PETERSSON, C. S.Thin solid films. 1985, Vol 128, Num 3-4, pp 283-297, issn 0040-6090Article

Oxidation of refractory intermetallic compounds : kinetics and thermodynamicsZHANG, S.-L; PISCH, A; D'HEURLE, F. M et al.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 1996, Vol 73, Num 3, pp 709-722, issn 1364-2804Article

Interfaces in silicidesD'HEURLE, F. M.Journal de physique. IV. 1996, Vol 6, Num 2, pp C2.29-C2.46, issn 1155-4339Conference Paper

Kinetic studies of intermetallic compound formation by resistance measurementsZHANG, S.-L; D'HEURLE, F. M.Thin solid films. 1995, Vol 256, Num 1-2, pp 155-164, issn 0040-6090Article

Note on the origin of intrinsic stresses in films deposited via evaporation and sputtering = Note sur l'origine des contraintes intrinsèques dans les couches déposées par évaporation et pulvérisationD'HEURLE, F. M; HARPER, J. M. E.Thin solid films. 1989, Vol 171, Num 1, pp 81-92, issn 0040-6090Article

Disilicide solid solutions, phase diagram, and resistivities. I: TiSi2-WSi2GAS, P; TARDY, F. J; D'HEURLE, F. M et al.Journal of applied physics. 1986, Vol 60, Num 1, pp 193-200, issn 0021-8979Article

MEASUREMENTS OF THE RECTIFYING BARRIER HEIGHTS OF VARIOUS RHODIUM SILICIDES WITH N-SILICONDE SOUSA PIRES J; D'HEURLE F; NORDE H et al.1980; APPL. PHYS. LETT.; USA; DA. 1980; VOL. 36; NO 2; PP. 153-155; BIBL. 15 REF.Article

  • Page / 4