Containing papers presented at the European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium I: Self-Organization in Semiconductors-Fundamentals and Applications, Strasbourg, France, June 4-8th 2001DÖHLER, Gottfried H.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, issn 0921-5107, 208 p.Conference Proceedings

Long-range interaction of self-assembled quantum dots via interface lightIVANOV, A. L.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 177-180, issn 0921-5107Conference Paper

Self-organised growth of silicon structures on silicon during oxide desorptionPALERMO, V; JONES, D.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 220-224, issn 0921-5107Conference Paper

Electric field-induced redistribution of free carriers at isotype (In, Ga)P/GaAs interfacesKRISPIN, P; KNAUER, A; GRAMLICH, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 129-133, issn 0921-5107Conference Paper

Self-assembled germanium nanocrystals on SiC{0001}SCHROETER, B; KOMLEV, K; RICHTER, W et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 259-263, issn 0921-5107Conference Paper

Temperature and excitation dependence of the luminescence spectra of InAs quantum dotsHJIRI, M; HASSEN, F; MAAREF, H et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 255-258, issn 0921-5107Conference Paper

Control of morphological transitions during heteroepitaxial island growth by reflection high-energy electron diffractionCIMALLA, V; ZEKENTES, K; VOUROUTZIS, N et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 186-190, issn 0921-5107Conference Paper

Effect of strain and ordering on the band-gap energy of InGaPNOVAK, J; HASENÖHRL, S; KUDELA, R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 139-142, issn 0921-5107Conference Paper

Optical and electrical spectroscopy of defects in low temperature grown GaAsSTEEN, C; KIESEL, P; TAUTZ, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 191-194, issn 0921-5107Conference Paper

Morphological transformation of In_yGa_1-yAs islands, fabricated by Stranski-Krastanov growthLORKE, A; BLOSSEY, R; GARCIA, J. M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 225-229, issn 0921-5107Conference Paper

Evolution of the intermixing process in Ge/Si(111) self-assembled islandsMOTTA, N; ROSEI, F; SGARLATA, A et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 264-268, issn 0921-5107Conference Paper

STM topographic and barrier imaging of self-assembled InAs/GaAs dotsSELCI, Stefano; LATINI, Gianluca; RIGHINI, Marcofabio et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 168-172, issn 0921-5107Conference Paper

Site-controlled self-organization of InAs quantum dotsKOHMOTO, Shigeru; NAKAMURA, Hitoshi; ISHIKAWA, Tomonori et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 292-297, issn 0921-5107Conference Paper

Stacked layers of InAs self-assembled quantum dotsKHORENKO, V; MALZER, S; PLAGWITZ, H et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 243-246, issn 0921-5107Conference Paper

A new tool for measuring island dimensions and spatial correlations in quantum dot multilayers: Raman scattering interferencesCAZAYOUS, M; GROENEN, J; HUNTZINGER, J. R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 173-176, issn 0921-5107Conference Paper

Magneto-photoluminescence study of electronic transitions in InAs/GaAs quantum dot layersKULDOVA, K; OSWALD, J; ZEMAN, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 247-251, issn 0921-5107Conference Paper

Simulations of the ripening of 3D, 2D and 1D objectsBONAFOS, C; COLOMBEAU, B; CARRADA, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 112-117, issn 0921-5107Conference Paper

Gain Enhancement by Dielectric Horns in the Terahertz BandANDRES-GARCIA, Belen; GARCIA-MUNOZ, Enrique; BAUERSCHMIDT, Sebastian et al.IEEE transactions on antennas and propagation. 2011, Vol 59, Num 9, pp 3164-3170, issn 0018-926X, 7 p.Article

Scanning tunneling miscroscopy study of InAs islands grown on GaAs(001) substratesSUEKANE, Osamu; HASEGAWA, Shigehiko; TAKATA, Masahiro et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 158-163, issn 0921-5107Conference Paper

Anisotropic surface structure in ordered strained InGaPHASENÖHRL, S; KUDELA, R; NOVAK, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 134-138, issn 0921-5107Conference Paper

Growth of InAs quantum dots on focussed ion beam implanted GaAs(100)REUTER, D; SCHAFMEISTER, P; KOCH, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 230-233, issn 0921-5107Conference Paper

Redistribution of localised excitons in CdSe/ZnSe quantum dot structuresSTRASSBURG, M; DWORZAK, M; HEITZ, R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 302-306, issn 0921-5107Conference Paper

Self-organization processes in semiconductor under photo-induced Gunn effectGORLEY, P. M; HORLEY, P. P; GONZALEZ-HERNANDEZ, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 286-291, issn 0921-5107Conference Paper

Self-organized quantum disks for a two-state systemTEMMYO, J; KAMADA, H; KURAMOCHI, E et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 153-157, issn 0921-5107Conference Paper

Self-organized technology of anisotropic etching of semiconductors for optoelectronics applicationDMITRUK, N. L; BORKOVSKAYA, O. Yu; MAYEVA, O. I et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 277-281, issn 0921-5107Conference Paper