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Octahedral cation antisite disorder effects in double 1:1 perovskites : Monte Carlo simulation study and percolation approachTARASEVICH, Yu. Yu; PANCHENKO, T. V; MANZHOSOVA, E. N et al.Journal de physique. IV. 2005, Vol 126, pp 65-68, issn 1155-4339, 4 p.Conference Paper

Compensation in GaAs crystals due to anti-structure disorderFIGIELSKI, T.Applied physics. A, Solids and surfaces. 1984, Vol 35, Num 4, pp 255-261, issn 0721-7250Article

Exciton-related luminescence in LuAg:Ce single crystals and single crystalline filmsZORENKO, Yu; GORBENKO, V; VOLOSHINOVSKII, A et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 6, pp 1113-1119, issn 0031-8965, 7 p.Conference Paper

Chemical trends for deep antisite defect levels in III-V compoundsPÖTZ, W; FERRY, D. K.The Journal of physics and chemistry of solids. 1985, Vol 46, Num 9, pp 1101-1108, issn 0022-3697Article

Amphoteric defects in GaAs leading to Fermi-level pinning: A hybrid functional studyCOLLEONI, Davide; PASQUARELLO, Alfredo.Microelectronic engineering. 2013, Vol 109, pp 50-53, issn 0167-9317, 4 p.Article

Electroactive and electroinactive dopants in Bi2Te3 and their interaction with antisite defectsCHIZHEVSKAYA, S. N; SHELIMOVA, L. E.Inorganic materials. 1995, Vol 31, Num 9, pp 1083-1095, issn 0020-1685Article

Schichtkristalle Bi2Te3 und Sb2Te3 ― Punktdefekte, Bindungspolarität und einige Transporteigenschaften = Mixed crystals Bi2Te3 and Sb2Te3. Point defects, bond polarity and some transport propertiesSTARY, Z; HORAK, J.Berichte der Bunsengesellschaft für Physikalische Chemie. 1989, Vol 93, Num 11, pp 1231-1234, issn 0005-9021, 4 p.Conference Paper

Antisite defects on III-V semiconductorsPOTZ, W; FERRY, D. K.Physical review. B, Condensed matter. 1984, Vol 29, Num 10, pp 5687-5693, issn 0163-1829Article

Experimental evidence for an associated defect model for the neutron generated AsGa center in gallium arsenideGOLTZENE, A; MEYER, B; SCHWAB, C et al.Radiation effects. 1984, Vol 82, Num 3-4, pp 307-311, issn 0033-7579Article

Résonance paramagnétique de défauts générés par irradiation neutronique dans l'arséniure de gallium = Electron paramagnetic resonance of neutron irradiation induced defects in gallium arsenideGOLTZENE, A; MEYER, B; SCHWAB, C et al.Revue de physique appliquée. 1983, Vol 18, Num 11, pp 703-707, issn 0035-1687Article

Nanomanipulation using only mechanical energyDIESKA, Peter; STICH, Ivan; PEREZ, Rubén et al.Physical review letters. 2005, Vol 95, Num 12, pp 126103.1-126103.4, issn 0031-9007Article

Study on the defects of ZnO nanowireWANG, D. F; ZHANG, T. J.Solid state communications. 2009, Vol 149, Num 43-44, pp 1947-1949, issn 0038-1098, 3 p.Article

Tailoring the visible photoluminescence of mass-produced ZnO nanowiresJINZHANG LIU; LEE, Soonil; AHN, Y. H et al.Journal of physics. D, Applied physics (Print). 2009, Vol 42, Num 9, issn 0022-3727, 095401.1-095401.6Article

Stability and band gaps of InGaAs, BGaAs, and BInGaAs alloys: Density-functional supercell calculationsJENICHEN, Arndt; ENGLER, Cornelia.Physica status solidi. B. Basic research. 2007, Vol 244, Num 6, pp 1957-1963, issn 0370-1972, 7 p.Article

On the meaning of effective formation entropies for atomic defects in ordered compoundsFÄHNLE, M; BESTER, G; MEYER, B et al.Scripta materialia. 1998, Vol 39, Num 8, pp 1071-1075, issn 1359-6462Article

Point defect study of CuTi and CuTi2SHOEMAKER, J. R; LUTTON, R. T; WESLEY, D et al.Journal of materials research. 1991, Vol 6, Num 3, pp 473-482, issn 0884-2914Article

Interaction of anti-site defects with Ge impurity atoms in Sb2Te3 single crystalsSTARY, Z; BENES, L; HORAK, J et al.Physica status solidi. A. Applied research. 1988, Vol 109, Num 1, pp 93-99, issn 0031-8965Article

Possibilité d'existence de défauts d'antistructure dans le tellure de cadmium non dopéMARTYNOV, V. N; KOBELEVA, S. P.Kristallografiâ. 1983, Vol 28, Num 2, issn 0023-4761, 394Article

A theoretical study of intrinsic point defects and defect clusters in magnesium aluminate spinelGILBERT, C. A; SMITH, R; KENNY, S. D et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 27, issn 0953-8984, 175406.1-175406.7Article

Free energy and capture cross section of the E2 trap in n-type GaNPERNOT, J; ULZHÖLER, C; MURET, P et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 4, pp 609-613, issn 0031-8965, 5 p.Conference Paper

Electron paramagnetic resonance determination of the generation rate of As antisites in fast neutron irradiated GaAsGOLTZENE, A; MEYER, B; SCHWAB, C et al.Journal of applied physics. 1983, Vol 54, Num 6, pp 3117-3120, issn 0021-8979Article

PGa antisite defect in Zn-implanted GaAs0.1P0.9 LEDPICKENHAIN, R; RHEINLÄNDER, B; BREHME, S et al.Physica status solidi. A. Applied research. 1983, Vol 79, Num 1, pp K61-K63, issn 0031-8965Article

Stability and band gaps of InGaP, basic solid BGaP, and BInGaP alloys: Density-functional supercell calculationsJENICHEN, Arndt; ENGLER, Cornelia.Physica status solidi. B. Basic research. 2010, Vol 247, Num 1, pp 59-66, issn 0370-1972, 8 p.Article

Defects in semiconductors : Some fatal, some vital : Control and use of defects in materialsQUEISSER, H. J; HALLER, E. E.Science (Washington, D.C.). 1998, Vol 281, Num 5379, pp 945-950, issn 0036-8075Article

Migration frequencies for complex diffusion pathsBIRNIE, D. P.The Journal of physics and chemistry of solids. 1990, Vol 51, Num 11, pp 1313-1321, issn 0022-3697, 9 p.Article

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