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Reaction-rate approach to the dipolar relaxation in alkali halidesGEORGIEV, M; GOCHEV, A.Physical review. B, Condensed matter. 1985, Vol 31, Num 8, pp 5456-5461, issn 0163-1829Article

IDENTIFICATION OF SMALL DEFECTS IN SILICON BY TRANSMISSION ELECTRON MICROSCOPY.OREL V.1976; SCRIPTA FAC. SCI. NAT. UNIV. PURKYN. BRUN.; TCHECOSL.; DA. 1976; VOL. 6; NO 4; PP. 43-51; ABS. RUSSE; BIBL. 10 REF.Article

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MOUVEMENT ET DEFORMATION DES CAVITES DANS UN MONOCRISTAL DE NACL DANS LE CHAMP D'UN GRADIENT DE TGEGUZIN YA E; KRUZHANOV VS.1973; FIZ. TVERD. TELA; S.S.S.R.; DA. 1973; VOL. 15; NO 1; PP. 165-171; BIBL. 6 REF.Serial Issue

Defect concentration measurements in solids using a lyoluminescence methodAVOTINSH, YU. E; DZELME, YU. R; TILIKS, YU. YE et al.The International journal of applied radiation and isotopes. 1985, Vol 36, Num 10, pp 789-791, issn 0020-708XArticle

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PORES MACROSCOPIQUES DANS DES COUCHES MINCESKUROV GA; ZHIL'KOV EH A.1972; MIKROELEKTRONIKA; S.S.S.R.; DA. 1972; VOL. 1; NO 2; PP. 144-151; BIBL. 10 REF.Serial Issue

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Kinetics of nucleation of clusters of defects in materials under continuous and cyclic irradiation conditionsRYAZANOV, A. I; SIDORENKO, A. D.Radiation effects. 1984, Vol 81, Num 1-2, pp 89-100, issn 0033-7579Article

ANALYSIS OF POINT DEFECT STATES IN COPPER. V. TEMPERATURE DEPENDENCE OF THE DEFECT PRODUCTION BY ELECTRON IRRADIATIONBECKER DE; DWORSCHAK F; WOLLENBERGER H et al.1972; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1972; VOL. 54; NO 2; PP. 455-462; ABS. ALLEM.; BIBL. 17 REF.Serial Issue

On equilibrium configurations in continuum mechanics of structural defectsGUNTHER, H.Annalen der Physik (Leipzig). 1984, Vol 41, Num 6, pp 407-418, issn 0003-3804Article

Some remarks on domain structures generated by disclinationsLEONOV, I. A.Physics letters. A. 1990, Vol 145, Num 8-9, pp 449-450, issn 0375-9601Article

Material forces and configurational forces in the interaction of elastic singularitiesNABARRO, F. R. N.Proceedings of the royal society of London, series A : mathematical and physical sciences. 1985, Vol 398, Num 1815, pp 209-222, issn 0080-4630Article

REORGANISATION DES DEFAUTS ET RELAXATIONS DE LONGUE DUREE DES PORTEURS HORS D'EQUILIBRE DANS LES SEMICONDUCTEURS A BANDE ETROITEVOLKOV BA; OSIPOV VV; PANKRATOV OA et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 7; PP. 1387-1389; BIBL. 8 REF.Article

Defect reactions on the phosphorus sublattice in low-temperature electron-irradiated InPSIBILLE, A; SUSKI, J.Physical review. B, Condensed matter. 1985, Vol 31, Num 8, pp 5551-5553, issn 0163-1829Article

INTERACTION PHONON-DEFAUTS DANS GAAS SEMI-ISOLANT.VUILLERMOZ PL; LAUGIER A; PINARD P et al.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 17; NO 4; PP. 413-415; ABS. ANGL.; BIBL. 13 REF.Article