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A MICROPROCESSOR-BASED STILL FRAME CAPTURING SYSTEMFARHANGI H; DASKALAKIS C; HEATON AG et al.1982; DISPLAYS; ISSN 0141-9382; GBR; DA. 1982; VOL. 3; NO 4; PP. 212-218; BIBL. 13 REF.Article

Biometric Recognition: Sensor Characteristics and Image QualityPRABHAKAR, Salil; IVANISOV, Alexander; JAIN, Anil et al.IEEE instrumentation & measurement magazine. 2011, Vol 14, Num 3, pp 10-16, issn 1094-6969, 7 p.Article

Visualization of spectral imagesPOLDER, Gerrit; VAN DER HEIJDEN, Gerie W. A. M.SPIE proceedings series. 2001, pp 132-137, isbn 0-8194-4281-XConference Paper

Aerial image sensor : In- situ scanner aberration monitorTYMINSKI, Jacek. K; HAGIWARA, Tsuneyuki; KONDO, Naoto et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6195-4, 2Vol, vol 2, 61523D.1-61523D.10Conference Paper

Color image fusion for concealed weapon detectionTOET, Alexander.SPIE proceedings series. 2003, pp 372-379, isbn 0-8194-4930-X, 8 p.Conference Paper

A statistical and geometrical edge detector for SAR imagesTOUZI, R; LOPES, A; BOUSQUET, P et al.IEEE transactions on geoscience and remote sensing. 1988, Vol 26, Num 6, pp 764-773, issn 0196-2892Article

Improved SOI image sensor design based on backside illumination on silicon-on-sapphire (SOS) substrateCHAO SHEN; CHEN XU; HUANG, R et al.IEEE International SOI conference. 2002, pp 73-74, isbn 0-7803-7439-8, 2 p.Conference Paper

Image sensor operating in a persistence-integration modeZHONG-SHOU HUANG; TAKAO ANDO.Applied optics. 1991, Vol 30, Num 32, pp 4636-4642, issn 0003-6935Article

Design options for optically restructuring damaged image detectorsIGEL, E. A; KRISTIANSEN, M.Optical engineering (Bellingham. Print). 1989, Vol 28, Num 8, pp 854-858, issn 0091-3286Article

The ESA photon counting detector: a scientific model for the Faint Object CameraDI SEREGO ALIGHIERI, S; PERRYMAN, M. A. C; MACCHETTO, F et al.Astronomy and astrophysics (Berlin. Print). 1985, Vol 149, Num 1, pp 179-185, issn 0004-6361Article

A 3.9μm pixel pitch VGA format 10b digital image sensor with 1.5-transistor/pixelTAKAHASHI, Hidekazu; KINOSHITA, Masakuni; MORITA, Kazumichi et al.IEEE International Solid-State Circuits Conference. 2004, pp 108-109, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

A 375 x 365 3D 1k frame/s range-Finding image sensor with 394.5 kHz access rate and 0.2 subpixel accuracyOIKE, Y; IKEDA, M; ASADA, K et al.IEEE International Solid-State Circuits Conference. 2004, pp 118-119, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

a-Si:H photoconversion layer thermal degradation for a two level image sensorMIYAGAWA, R; YAMAGUCHI, T; FURUKAWA, A et al.Journal of non-crystalline solids. 1991, Vol 137-38, pp 1317-1320, issn 0022-3093, 2Conference Paper

Calculation of the modes of operation of a CCD image sensorSTATSENKO, V. A.Telecommunications & radio engineering. 1990, Vol 45, Num 5, pp 52-55, issn 0040-2508Article

A two-phase drive bipolar linear image sensor using zigzag arrangement of PCD shift register elementsKUSUDA, Y; SHIMOMICHI, Y; TANAKA, S et al.IEEE electron device letters. 1984, Vol 5, Num 8, pp 313-315, issn 0741-3106Article

Intrinsic type a-SiC:H hole-blocking layer effects on image lag in an amorphous silicon image sensorIIDA, Y; NOZAKI, H; YANO, K et al.Journal of non-crystalline solids. 1991, Vol 137-38, pp 1313-1316, issn 0022-3093, 2Conference Paper

Etude des performances des détecteurs radiographiques utilisés en radiologie conventionnelle. Evaluation pratique = Study of the performance of radiographic detectors used in conventional radiology. Practical evaluationAstie, Thérèse; Chavaudra, Jean.1989, 166 p.Thesis

THE IMPACT OF LARGE CCD IMAGE SENSING AREA ARRAYS.AMELIO GF.1975; ELECTRON. COMPON.; G.B.; DA. 1975; VOL. 17; NO 3; PP. 19-22 (3P.); BIBL. 8 REF.Article

MOS AREA SENSOR. II: LOW-NOISE MOS AREA SENSOR WITH ANTIBLOOMING PHOTODIODESOHBA S; NAKAI M; ANDO H et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1682-1687; BIBL. 17 REF.Article

STEP- AND -REPEAT WAFER IMAGING.ROUSSEL J.1978; SOLIDE STATE TECHNOL.; USA; DA. 1978; VOL. 21; NO 5; PP. 67-71; BIBL. 5 REF.Article

SPACEBORNE ASTRONOMY WITH ELECTRO-OPTICAL IMAGE SENSORS.BRADLEY WC.1977; OPT. ENGNG; U.S.A.; DA. 1977; VOL. 16; NO 3; PP. 249-256; BIBL. 11 REF.Article

COLLECTION EFFICIENCY AND TRANSFER CHARACTERISTICS OF CID IMAGE SENSORS.ANAGNOSTOPOULOS C; SADASIV G.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 9; PP. 771-776; BIBL. 13 REF.Article

IMAGE SENSORS FOR SOLID STATE CAMERAS.WEIMER PK.1975; ADV. ELECTRON. ELECTRON PHYS.; U.S.A.; DA. 1975; NO 37; PP. 181-262; BIBL. 2 P. 1/2Article

MEASUREMENTS ON A CHARGE-COUPLED AREA IMAGE SENSOR WITH BLOOMING SUPPRESSION.SEQUIN CH; SHANKOFF TA; SEALER DA et al.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 6; PP. 331-341; BIBL. 16 REF.Article

THE TRADE OFFS IN MONOLITHIC IMAGE SENSORS: MOS VS CCDMELEN R.1973; ELECTRONICS; U.S.A.; DA. 1973; VOL. 46; NO 11; PP. 106-111Serial Issue

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