DC and RF Performance of AIN/GaN MOS-HEMTs : Fundamentals and Applications of Advanced Semiconductor DevicesTAKING, Sanna; MACFARLANE, Douglas; KHOKHAR, Ali Z et al.IEICE transactions on electronics. 2011, Vol 94, Num 5, pp 835-841, issn 0916-8524, 7 p.Article

Electron trapping effects in C- and Fe-doped GaN and AlGaNLOPATIUK, Olena; OSINSKY, Andrei; DABIRAN, Amir et al.Solid-state electronics. 2005, Vol 49, Num 10, pp 1662-1668, issn 0038-1101, 7 p.Article

Electrical properties of undoped bulk ZnO substratesPOLYAKOV, A. Y; SMIRNOV, N. B; GOVORKOV, A. V et al.Journal of electronic materials. 2006, Vol 35, Num 4, pp 663-669, issn 0361-5235, 7 p.Article

Effect of silicon nitride PECVD growth on AlGaN/GaN HEMT dispersion and breakdown characteristicsFITCH, Robert; GILLESPIE, James; VIA, Dave et al.Proceedings - Electrochemical Society. 2004, pp 459-464, issn 0161-6374, isbn 1-56677-419-5, 6 p.Conference Paper

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Development of high performance AlGaN/GaN high electron mobility transistors for RF applicationsSOOD, Ashok K; EGERTON, E. James; ZWIEBACK, Ilya et al.SPIE proceedings series. 2004, pp 130-144, isbn 0-8194-5488-5, 15 p.Conference Paper

Carrier screening effect in AlGaN quantum-well avalanche photodiodeZHANG, Sheng-Kun; WUBAO WANG; ALFANO, Robert R et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7216, issn 0277-786X, isbn 978-0-8194-7462-9 0-8194-7462-2, 1Vol, 72162G.1-72162G.5Conference Paper

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Direct deposition of GaN-based photocathodes on microchannel platesDABIRAN, Amir M; WOWCHAK, Andrew M; CHOW, Peter P et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7212, issn 0277-786X, isbn 978-0-8194-7458-2, 721213.1-721213.7Conference Paper