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au.\*:("DAMODARA DAS V")

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OSCILLATORY BEHAVIOUR OF RESISTIVITY WITH THICKNESS IN BISMUTH THIN FILMSDAMODARA DAS V; JAYAPRAKASH N.1981; VACUUM; ISSN 0042-207X; GBR; DA. 1981; VOL. 31; NO 4-5; PP. 199-202; BIBL. 17 REF.Article

THICKNESS DEPENDENCE OF RESISTIVITY IN IN-BI THIN FILMSDAMODARA DAS V; JAGADEESH MS.1981; VACUUM; ISSN 0042-207X; GBR; DA. 1981; VOL. 31; NO 1; PP. 15-17; BIBL. 8 REF.Article

ANOMALOUS VARIATION OF RESISTANCE IN BISMUTH THIN FILMS AND THE EFFECT OF SUBSTRATE TEMPERATURE = VARIATION ANORMALE DE LA RESISTANCE DANS LES COUCHES MINCES DE BISMUTH ET EFFET DE LA TEMPERATURE DU SUPPORTDAMODARA DAS V; JAYAPRAKASH N.1981; VACUUM; GBR; DA. 1981; VOL. 31; NO 3; PP. 133-136; BIBL. 9 REF.Article

SEMICONDUCTING BEHAVIOR IN ANTIMONY-DOPED BISMUTH FILMSDAMODARA DAS V; JAGADEESH MS.1981; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1981; VOL. 19; NO 1; PP. 89-92; BIBL. 16 REF.Article

BAND GAP AND INTERGRAIN BARRIER ACTIVATION ENERGIES IN BI90SB10 THIN FILMS = BANDE INTERDITE ET ENERGIES D'ACTIVATION DES BARRIERES INTER-GRAINS DANS LES COUCHES MINCES DE BI90SB10DAMODARA DAS V; JAGADEESH MS.1981; MATER. RES. BULL.; ISSN 0025-5408; USA; DA. 1981; VOL. 16; NO 12; PP. 1547-1555; BIBL. 27 REF.Article

ELECTRICAL CONDUCTIVITY, DEFECT DENSITY AND STRUCTURE OF OBLIQUELY VACUUM-DEPOSITED TIN ANTIMONIDE ALLOY THIN FILMSDAMODARA DAS V; JAGADEESH MS.1982; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1982; VOL. 17; NO 3; PP. 671-676; BIBL. 17 REF.Article

INITIAL LATTICE DISTORTION ENERGY SPECTRA OF BISMUTH THIN FILMS AND THE EFFECT OF DEPOSITION RATEDAMODARA DAS V; JAYAPRAKASH N.1981; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1981; VOL. 68; NO 2; PP. K159-K164; BIBL. 27 REF.Article

COLOUR CENTRE STUDIES IN MOO3 FILMSJAGADEESH MS; DAMODARA DAS V.1978; J. NON-CRYST. SOLIDS; NLD; DA. 1978; VOL. 28; NO 3; PP. 327-335; BIBL. 9 REF.Article

EFFECT OF SUBSTRATE TEMPERATURE DURING GROWTH ON DEFECT DENSITY IN BISMUTH THIN FILMSDAMODARA DAS V; JAYAPRAKASH N.1982; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1982; VOL. 20; NO 1; PP. 58-63; BIBL. 21 REF.Article

ELECTRICAL PROPERTIES OF BI80SB20 ALLOY THIN FILMS, VACUUM-DEPOSITED AT DIFFERENT SUBSTRATE TEMPERATURESDAMODARA DAS V; MEENA N.1981; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1981; VOL. 16; NO 12; PP. 3489-3495; BIBL. 18 REF.Article

SEMICONDUCTING BEHAVIOUR IN BI60SB40 ALLOY THIN FILMSDAMODARA DAS V; JAGADEESH MS.1981; VACUUM; ISSN 0042-207X; GBR; DA. 1981; VOL. 31; NO 2; PP. 75-77; BIBL. 12 REF.Article

A STUDY FROM ELECTRICAL CONDUCTIVITY DATA OF THE DEFECT CONCENTRATION IN AS-GROWN INDIUM THIN FILMS VACUUM DEPOSITED AT DIFFERENT DEPOSITION RATES = ETUDE A PARTIR DE DONNEES DE CONDUCTIVITE ELECTRIQUE DE LA CONCENTRATION DE DEFAUTS DANS DES COUCHES MINCES D'INDIUM DEPOSEES SOUS VIDE A DIFFERENTES VITESSES DE DEPOTDAMODARA DAS V; TALAWAI AS.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 81; NO 1; PP. 21-25; BIBL. 16 REF.Article

THE ELECTRICAL CONDUCTIVITY OF COPPER AND TIN THIN FILMS VACUUM DEPOSITED IN A LATERAL ELECTRIC FIELD = CONDUCTIVITE ELECTRIQUE DE COUCHES MINCES D'ETAIN ET DE CUIVRE DEPOSEES SOUS VIDE DANS UN CHAMP ELECTRIQUE LATERALDAMODARA DAS V; GOPALAKRISHNAN S.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 81; NO 2; PP. 131-135; BIBL. 10 REF.Article

DEFECT DENSITY VARIATION WITH DEPOSITION RATE IN SNSB THIN FILMS FROM ANNEALING STUDY OF ELECTRICAL RESISTANCE.DAMODARA DAS V; JAGADEESH MS.1977; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1977; VOL. 38; NO 2; PP. 167-174; BIBL. 25 REF.Article

ANNEALING AND THICKNESS EFFECTS ON THE ELECTRICAL RESISTANCE OF VACUUM-DEPOSITED TIN ANTIMONIDE ALLOY FILMS.DAMODARA DAS V; JAGADEESH MS.1974; THIN SOLID FILMS; NETHERL.; DA. 1974; VOL. 24; NO 2; PP. 203-210; BIBL. 10 REF.Article

THERMOELECTRIC POWER OF TELLURIUM THIN FILMS AND ITS THICKNESS AND TEMPERATURE DEPENDENCEDAMODARA DAS V; JAYAPRAKASH N; SOUNDARAJAN N et al.1981; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1981; VOL. 16; NO 12; PP. 3331-3334; BIBL. 22 REF.Article

Modified equations for the evaluation of energy distribution of defects in as-grown thin films by Vands theory = Equations modifiées pour déterminer la distribution en énergie des défauts dans des couches minces par la théorie de VandDAMODARA DAS, V.Journal of applied physics. 1984, Vol 55, Num 4, pp 1023-1028, issn 0021-8979Article

Electrical conduction studies on Bi2(Te0.8Se0.2)3 chalcogenide thin filmsDAMODARA DAS, V; SELVARAJ, S.Solid state communications. 1999, Vol 111, Num 1, pp 43-48, issn 0038-1098Article

Time dependent electrical resistance of Bi2(Te0.4Se0.6)3 thin films in vacuum and on exposure to atmosphereDAMODARA DAS, V; SELVARAJ, S.Solid state communications. 1998, Vol 108, Num 11, pp 873-877, issn 0038-1098Article

Structural and electrical properties of Bi2(Te0.4Se0.6)3 thin filmsDAMODARA DAS, V; SELVARAJ, S.Materials chemistry and physics. 2000, Vol 62, Num 1, pp 68-74, issn 0254-0584Article

Thermoelectric studies on semiconducting Ag2Te thin films: temperature and dimensional effectsDAMODARA DAS, V; KARUNAKARAN, D.Physical review. B, Condensed matter. 1984, Vol 30, Num 4, pp 2036-2041, issn 0163-1829Article

Thermoelectric power of annealed β-Ag2Se alloy thin films: temperature and size effects ― possibility of a new (β2) phase at low temperaturesDAMODARA DAS, V; KARUNAKARAN, D.Journal of applied physics. 1990, Vol 67, Num 2, pp 878-883, issn 0021-8979Article

Electrical properties of Bi80Sb20 alloy thin films, vacuum-deposited at different substrate temperaturesDAMODARA DAS, V; MEENA, N.Journal of materials science. 1981, Vol 16, Num 12, pp 3489-3495, issn 0022-2461Article

CRYOPUMPING AND SUBSTRATE COOLING ATTACHMENTS TO A HIGH VACUUM THIN FILM COATING UNITVASUDEVA RAO V; JAYAPRAKASH N; DAMODARA DAS V et al.1980; INDIAN J. CRYOG.; ISSN 0379-0479; IND; DA. 1980; VOL. 5; NO 3; PP. 23-26Article

A study of substrate variation effects on the properties of n-CdSe0.7Te0.3 thin film/polysulphide photoelectrochemical solar cellsDAMODARA DAS, V; DAMODARE, L.Materials chemistry and physics. 1998, Vol 56, Num 1, pp 48-55, issn 0254-0584Article

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