Thermal annealing and hydrogenation of chlorinated hydrogenated amorphous silicon filmsDANESH, P.Thin solid films. 1987, Vol 147, Num 3, pp 285-290, issn 0040-6090Article

Annealing behaviour of a-Si:H:Cl filmsDANESH, P.Physica status solidi. A. Applied research. 1985, Vol 92, Num 2, pp 631-635, issn 0031-8965Article

Post-deposition oxygen plasma treatment of a-Si:HDANESH, P.Thin solid films. 1991, Vol 202, Num 1, pp L5-L7, issn 0040-6090Article

Mechanical stress in SiO₂/Si structures formed by thermal oxidation of amorphous and crystalline siliconSZEKERES, A; DANESH, P.Semiconductor science and technology. 1996, Vol 11, Num 8, pp 1225-1230, issn 0268-1242Article

Revelation of micropores in a Si: H filmsDANESH, P; PANTCHEV, B. G.Solar energy materials. 1988, Vol 17, Num 2, pp 95-98, issn 0165-1633Article

Field-assisted ion exchange for the detection of localized defects in thin films on glass substratesPANTCHEV, B. G; DANESH, P.Thin solid films. 1988, Vol 161, Num 1-2, pp 85-91, issn 0040-6090Article

Hydrogenated amorphous silicon on soda-lime glass substrate : correlation between sodium contamination and porosity of the filmsPANTCHEV, B; DANESH, P.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 1995, Vol 72, Num 5, pp 1351-1356, issn 1364-2804Article

Masking problem in the fabrication of optical waveguide structures in glass by double ion exchangePANTCHEV, B; DANESH, P.Japanese journal of applied physics. 1997, Vol 36, Num 7A, pp 4320-4322, issn 0021-4922, 1Article

Hydrogen passivation of the implantation defects in MOS structuresDANESH, P; KASCHIEVA, S. B.Radiation effects. 1984, Vol 86, Num 2-3, pp 35-42, issn 0033-7579Article

AMORPHOUS TO CRYSTALLINE STATE CONVERSION IN DEPOSITED SILICON LAYERSKALITZOVA MG; SIMOV SB; PANTCHEV BG et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 63; NO 2; PP. 743-749; ABS. GER; BIBL. 17 REF.Article

Infrared absorption strengths of ion-implanted hydrogenated amorphous siliconDANESH, P; PANTCHEV, B; SCHMIDT, B et al.Thin solid films. 2008, Vol 516, Num 10, pp 3383-3386, issn 0040-6090, 4 p.Article

Microstructure and optical properties in CVD a-Si:H filmsDANESH, P; TONEVA, A; PANTCHEV, B et al.Physica status solidi. A. Applied research. 1990, Vol 122, Num 2, pp 599-605, issn 0031-8965, 7 p.Article

Correlation between short-range order and hydrogen bonding in hydrogenated amorphous silicon obtained by homogeneous chemical vapour depositionTONEVA, A; DANESH, P; VASSILEV, L et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1994, Vol 70, Num 6, pp 1187-1193, issn 0958-6644Article

Nanoindentation of hydrogenated amorphous siliconPANTCHEV, B; DANESH, P; WIEZOREK, J et al.Philosophical magazine (2003. Print). 2010, Vol 90, Num 29-30, pp 4027-4039, issn 1478-6435, 13 p.Article

Field-assisted ion exchange in glass : the effect of masking filmsPANTCHEV, B; DANESH, P; NIKOLOV, Z et al.Applied physics letters. 1993, Vol 62, Num 11, pp 1212-1214, issn 0003-6951Article

Oxidation of a-Si:H stress behaviour in the grown oxideSZEKERES, A; CHRISTOVA, K; DANESH, P et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1993, Vol 68, Num 1, pp 29-37, issn 0958-6644Article

a-Si:H thin film microstructure influenced by HOMOCVD-process parametersTONEVA, A; PANTCHEV, B; DANESH, P et al.Solar energy materials and solar cells. 1993, Vol 31, Num 2, pp 301-306, issn 0927-0248Article

Raman scattering in glow discharge Si:H:Cl filmsDANESH, P; SAVATINOVA, I; ANACHKOVA, E et al.Physica status solidi. A. Applied research. 1986, Vol 98, Num 1, pp 127-132, issn 0031-8965Article

Oxidation of a-Si:H (Si/SiO₂ interface properties)DANESH, P; SZEKERES, A; KASCHIEVA, S et al.Solid-state electronics. 1995, Vol 38, Num 6, pp 1179-1182, issn 0038-1101Article

On the interaction of hydrogen RF plasma with implantation-induced defects in MOS structuresDANESH, P; KASCHIEVA, S; DJAKOV, A et al.Solid-state electronics. 1985, Vol 28, Num 11, pp 1085-1099, issn 0038-1101Article

Surface relief of crystalline quartz etched in a planar plasma reactorPANTCHEV, B. G; MIKHAILOV, M. G; DANESH, P et al.Thin solid films. 1983, Vol 106, Num 3, pp 137-144, issn 0040-6090Article

a-Si:H film on side-polished fiber as optical polarizer and narrow-band filterANDREEV, A; PANTCHEV, B; DANESH, P et al.Thin solid films. 1998, Vol 330, Num 2, pp 150-156, issn 0040-6090Article

The relationship between the film properties and the preparation conditions for a-Si:H grown by homogeneous chemical vapour depositionTONEVA, A; MIHAILOVA, T; DANESH, P et al.Semiconductor science and technology. 1994, Vol 9, Num 12, pp 2285-2289, issn 0268-1242Article

Ion beam-induced hydrogen migration in a SiO₂/a-Si:H/SiO₂ layer stackPANTCHEV, B; DANESH, P; SCHMIDT, B et al.Semiconductor science and technology. 2009, Vol 24, Num 3, issn 0268-1242, 035012.1-035012.5Article

Hydrogen bonding and structural order in hydrogenated amorphous silicon prepared with hydrogen-diluted silaneDANESH, P; PANTCHEV, B; ANTONOVA, K et al.Journal of physics. D, Applied physics (Print). 2004, Vol 37, Num 2, pp 249-254, issn 0022-3727, 6 p.Article