A SYSTEMATIC STUDY OF POSITRON LIFETIMES IN SEMICONDUCTORSDANNEFAER S.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 3; PP. 599-605; BIBL. 22 REF.Article

ON THE EFFECT OF BACKSCATTERING OF GAMMA QUANTA AND STATISTICS IN POSITRON-ANNIHILATION LIFETIME MEASUREMENTSDANNEFAER S.1981; APPL. PHYS., A, SOLIDS SURF.; DEU; DA. 1981; VOL. 26; NO 4; PP. 255-259; BIBL. 2 REF.Article

POSITRON ANNIHILATION IN COLOURED KCL.SMEDSKJAER L; DANNEFAER S.1974; J. PHYS. C; G.B.; DA. 1974; VOL. 7; NO 15; PP. 2603-2613; BIBL. 13 REF.Article

Positron annihilation in diamond, silicon and silicon carbideDANNEFAER, S.Applied physics. A, Materials science & processing (Print). 1995, Vol 61, Num 1, pp 59-63, issn 0947-8396Article

A STUDY OF DEFECTS IN AMORPHOUS SILICON FILMSDANNEFAER S; KERR D; HOGG BG et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 1; PP. 155-160; BIBL. 19 REF.Article

POSITRON ANNIHILATION IN THERMALLY QUENCHED POTASSIUM CHLORIDE.DANNEFAER S; DEAN GW; HOGG BG et al.1976; PHYS. REV., B; U.S.A.; DA. 1976; VOL. 13; NO 9; PP. 3715-3723; BIBL. 26 REF.Article

POSITRON ANNIHILATION STUDIES OF THE TRANSFORMATION OF F CENTRES TO R CENTRES IN KCL.DANNEFAER S; KERR DP; HOGGS BG et al.1975; J. PHYS. C; G.B.; DA. 1975; VOL. 8; NO 17; PP. 2667-2673; BIBL. 11 REF.Article

Oxygen in silicon: a positron annihilation investigationDANNEFAER, S; KERR, D.Journal of applied physics. 1986, Vol 60, Num 4, pp 1313-1321, issn 0021-8979Article

POSITRON ANNIHILATION IN ⁶⁰CO IRRADIATED ALKALI HALIDESDANNEFAER S; KERR DP; DEAN GW et al.1978; CANAD. J. PHYS.; CAN; DA. 1978; VOL. 56; NO 12; PP. 1527-1530; ABS. FRE; BIBL. 15 REF.Article

INFLUENCE OF DEFECTS AND TEMPERATURE ON THE ANNIHILATION OF POSITRONS IN NEUTRON-IRRADIATED SILICON.DANNEFAER S; DEAN GW; KERR DP et al.1976; PHYS. REV., B; U.S.A.; DA. 1976; VOL. 14; NO 7; PP. 2709-2714; BIBL. 27 REF.Article

Positron annihilation studies of γ-irradiated type Ib and IIa diamondsAVALOS, V; DANNEFAER, S.Diamond and related materials. 2005, Vol 14, Num 2, pp 155-159, issn 0925-9635, 5 p.Article

Positron binding energies and specific trapping rates for monovacancies in GaAs and InSbDANNEFAER, S; KERR, D.Physical review. B, Condensed matter. 1993, Vol 48, Num 12, pp 9142-9145, issn 0163-1829Article

Positron annihilation investigation of electron irradiation-produced defects in 6H-SiCDANNEFAER, S; KERR, D.Diamond and related materials. 2004, Vol 13, Num 1, pp 157-165, issn 0925-9635, 9 p.Article

A POSITRON STUDY OF PLASTIC DEFORMATION OF SILICONDANNEFAER S; FRUENSGAARD N; KUPCA S et al.1983; CANADIAN JOURNAL OF PHYSICS; ISSN 0008-4204; CAN; DA. 1983; VOL. 61; NO 3; PP. 451-459; ABS. FRE; BIBL. 26 REF.Article

ON THE INFLUENCE OF DEFECTS ON POSITION ANNIHILATION IN ALKALI-HALIDES.SMEDSKJAER L; DANNEFAER S; COTTERILL RMJ et al.1973; J. PHYS., COLLOQ.; FR.; DA. 1973; VOL. 34; NO 9; PP. 97-99; ABS. FR.; BIBL. 1 REF.; (DEFAUTS RESEAU CRISTAUX IONIQUES. 1ERE CONF. INT.; MARSEILLE; 1973)Conference Paper

Defects in electron irradiated boron-doped diamonds investigated by positron annihilation and optical absorptionDANNEFAER, S; IAKOUBOVSKII, K.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 23, issn 0953-8984, 235225.1-235225.9Article

Vacancy interactions in GaAsDANNEFAER, S; KERR, D.Journal of applied physics. 1986, Vol 60, Num 2, pp 591-594, issn 0021-8979Article

TEMPERATURE DEPENDENCE OF THE ANNIHILATION OF POSITRONS IN SI CONTAINING DIVACANCIES AND QUADRIVACANCIESDANNEFAER S; KUPCA S; HOGG BG et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 22; NO 12; PP. 6135-6139; BIBL. 13 REF.Article

Grown-in vacancy-type defects in poly-and single crystalline silicon investigated by positron annihilationDANNEFAER, S; AVALOS, V; ANDERSEN, O et al.EPJ. Applied physics (Print). 2007, Vol 37, Num 2, pp 213-218, issn 1286-0042, 6 p.Article

Defect characteristics in different crystallographic directions in Cz-Si as a function of doping and annealingPUFF, W; DANNEFAER, S; MASCHER, P et al.Physica status solidi. A. Applied research. 1987, Vol 102, Num 2, pp 527-531, issn 0031-8965Conference Paper

Positron annihilation study of vacancies in type IIa diamonds illuminated with monochromatic lightDANNEFAER, S; PU, A; KERR, D et al.Diamond and related materials. 2001, Vol 10, Num 12, pp 2113-2117, issn 0925-9635Article

Annealing studies of vacancies in proton irradiated siliconDANNEFAER, S; MASCHER, P; KERR, D et al.Journal of applied physics. 1993, Vol 73, Num 8, pp 3740-3743, issn 0021-8979Article

Positron trapping rates and their temperature dependencies in electron-irradiated siliconMASCHER, P; DANNEFAER, S; KERR, D et al.Physical review. B, Condensed matter. 1990, Vol 40, Num 17, pp 11764-11771, issn 0163-1829Article

Indium vacancy in as-grown InP : a positron annihilation studyBRETAGNON, T; DANNEFAER, S; KERR, D et al.Journal of applied physics. 1993, Vol 73, Num 9, pp 4697-4699, issn 0021-8979Article

Nitrocarburizing of low-carbon unalloyed steel. II: Positron annihilation studies = Nitrocarburation d'aciers non alliés à bas carbone. II: Etudes par annihilation de positonsDANNEFAER, S; HOGG, B; KERR, D et al.Journal of materials science. 1984, Vol 19, Num 4, pp 1099-1108, issn 0022-2461Article