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Results 1 to 25 of 51

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GA1-XALXAS/GA1-YALYAS DOUBLE-HETEROSTRUCTURE ROOM-TEMPERATURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION.DUPUIS RD; DAPKUS PD.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 12; PP. 839-841; BIBL. 20 REF.Article

ROOM-TEMPERATURE OPERATION OF GA1-XALXAS/GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION.DUPUIS RD; DAPKUS PD.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 7; PP. 466-468; BIBL. 22 REF.Article

SINGLE-LONGITUDINAL-MODE METALORGANIC CHEMICAL-VAPOR-DEPOSITION SELF-ALIGNED GAALAS-GAAS DOUBLE-HETEROSTRUCTURE LASERSCOLEMAN JJ; DAPKUS PD.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 3; PP. 262-263; BIBL. 17 REF.Article

CONTINUOUS ROOM-TEMPERATURE OPERATION OF GA1-XALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION.DUPUIS RD; DAPKUS PD.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 7; PP. 406-407; BIBL. 12 REF.Article

ROOM-TEMPERATURE OPERATION OF DISTRIBUTED-BRAGG-CONFINEMENT GA1-XALXAS-GAAS LASERS GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITIONDUPUIS RD; DAPKUS PD.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 1; PP. 68-69; BIBL. 14 REF.Article

SINGLE-LONGITUDINAL-MODE CW ROOM-TEMPERATURE GA1-XALXAS-GAAS CHANNEL GUIDE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITIONDUPUIS RD; DAPKUS PD.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 8; PP. 724-726; BIBL. 12 REF.Article

VERY LOW THRESHOLD GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION.DUPUIS RD; DAPKUS PD.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 32; NO 8; PP. 473-475; BIBL. 21 REF.Article

OBSERVATIONS ON SI CONTAMINATION IN GAP LPE.LORIMOR OG; HASZKO SE; DAPKUS PD et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 9; PP. 1230-1233; BIBL. 18 REF.Article

VERY HIGH EFFICIENCY GAP GREEN LIGHT EMITTING DIODES.LORIMOR OG; DAPKUS PD; HACKETT WH JR et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 3; PP. 407-412; BIBL. 25 REF.Article

AN ANALYSIS OF THE PERFORMANCE OF HETEROJUNCTION PHOTOTRANSISTORS FOR FIBER OPTIC COMMUNICATIONSMILANO RA; DAPKUS PD; STILLMAN GE et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 266-274; BIBL. 42 REF.Article

NOVEL TECHNIQUE FOR MEASURING NITROGEN PROFILES IN GAP:N.JAGDEEP SHAH; LEHENY RF; DAPKUS PD et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 12; PP. 5244-5246; BIBL. 12 REF.Article

LASER-MACHINED GAP MONOLITHIC DISPLAYS.DAPKUS PD; WEICK WW; DIXON RW et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 6; PP. 292-294; BIBL. 8 REF.Article

ROOM-TEMPERATURE DEEP-STATE EMISSION SPECTRA, RADIATIVE EFFICIENCY, AND LIFETIME OF SOME GAP:TE,N CRYSTALS.BACHRACH RZ; DAPKUS PD; LORIMOR OG et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 11; PP. 4971-4973; BIBL. 11 REF.Article

ABRUPT GA1-XALXAS-GAAS QUANTUM WELL HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITIONDUPUIS RD; DAPKUS PD; GARNER CM et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 5; PP. 335-337; BIBL. 19 REF.Article

KINETICS OF RECOMBINATION IN NITROGEN-DOPED GAP.DAPKUS PD; HACKETT WH JR; LORIMOR OG et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 11; PP. 4920-4930; BIBL. 26 REF.Article

CONTROLLED ZN DIFFUSION FOR LOW THRESHOLD NARROW STRIPE GA ALAS/GAAS DH LASERSHONG CS; LIU YZ; DAPKUS PD et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 9; PP. 225-227; BIBL. 8 REF.Article

ROOM-TEMPERATURE CONTINUOUS OPERATION OF PHOTOPUMPED MO-CVD ALXGA1-X AS-GAAS-ALX GA1-X AS QUANTUM-WELL LASERSHOLONYAK N JR; KOLBAS RM; DUPUIS RD et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 1; PP. 73-75; BIBL. 17 REF.Article

LOW-THRESHOLD 1-3-MU M GAINASP/INP BURIED HETEROSTRUCTURE LASERS BY LIQUID PHASE EPITOXY AND METALORGANIC CHEMICAL VAPOR DEPOSITIONNG W; HONG CS; MANASEVIT H et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 3; PP. 188-189; BIBL. 10 REF.Article

CONTINUOUS ROOM-TEMPERATURE MULTIPLE-QUANTUM-WELL ALXGA1-XAS-GAAS INJECTION LASERS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITIONDUPUIS RD; DAPKUS PD; HOLONYAK N JR et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 7; PP. 487-489; BIBL. 25 REF.Article

LOW-THRESHOLD OXIDE STRIPE GAAS/GAALAS LASERS GROWN BY MOCVDHONG CS; KASEMSET D; PATEL NB et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 12; PP. 497-499; BIBL. 11 REF.Article

ZN DIFFUSION AND DISORDERING OF AN ALAS-GAAS SUPERLATTICE ALONG ITS LAYERSKIRCHOEFER SW; HOLONYAK N JR; COLEMAN JJ et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 766-768; BIBL. 10 REF.Article

ELECTRICAL PROPERTIES OF POLYCRYSTALLINE GAAS FILMSYANG JJJ; DAPKUS PD; DUPUIS RD et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 7; PP. 3794-3800; BIBL. 26 REF.Article

QUANTUM-WELL HETEROSTRUCTURE LASERSHOLONYAK N JR; KOLBAS RM; DUPUIS RD et al.1980; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1980; VOL. 16; NO 2; PP. 170-186; BIBL. 56 REF.Article

DETERMINATION OF THE INDIRECT BAND EDGE OF GAAS BY QUANTUM WELL BANDFILLING (L2 EQUIV. A 100 A)DUPUIS RD; DAPKUS PD; KOLBAS RM et al.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 27; NO 5; PP. 531-533; BIBL. 15 REF.Article

HIGH PRESSURE MEASUREMENTS ON ALXGA1-XAS-GAAS (X=0.5 AND 1) SUPERLATTICES AND QUANTUM-WELL HETEROSTRUCTURE LASERSKIRCHOEFER SW; HOLONVAK N JR; MEEHAN K et al.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 9; PP. 6037-6042; BIBL. 20 REF.Article

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