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CHARACTERIZATION OF IN_0.53GA_0.47AS PHOTODIODES EXHIBITING LOW DARK CURRENT AND LOW JUNCTION CAPACITANCELEHENY RF; NAHORY RE; POLLACK MA et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 227-231; BIBL. 17 REF.Article

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VERY LOW DARK CURRENT P-P-P BASE INGAASP/INP PHOTOTRANSISTORSKOBAYASHI M; SAKAI S; UMENO M et al.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 3; PART. 2; PP. L159-L161; BIBL. 8 REF.Article

MEASUREMENTS ON BULK-CHANNEL MOS CAPACITORS FOR DORK CURRENT CHARACTERIZATION OF PERISTALTIC CHARGE-COUPLED DEVICES.THEUNISSEN MJJ; SNEL J; WILLEMSE PHM et al.1977; PHILIPS RES. REP.; NETHERL.; DA. 1977; VOL. 32; NO 5-6; PP. 429-435; BIBL. 6 REF.Article

ORIGIN OF THE DARK CURRENTS IN GOLD-A-AS₂SE₃ SANDWICH CELLS.ABKOWITZ M; SCHARFE M.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 23; NO 5; PP. 305-309; BIBL. 16 REF.Article

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A TECHNIQUE FOR SUPPRESSING DARK CURRENT GENERATED BY INTERFACE STATE IN BURIED CHANNEL CCD IMAGERSSAKS NS.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 7; PP. 131-133; BIBL. 4 REF.Article

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INGAASP HETEROSTRUCTURE AVALANCHE PHOTODIODES WITH HIGH AVALANCHE GAINNISHIDA K; TAGUCHI K; MATSUMOTO Y et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 3; PP. 251-253; BIBL. 9 REF.Article

A NEW EXPERIMENTAL METHOD TO MEASURE THE TRANSFER INEFFICIENCY OF CHARGE COUPLED DEVICESYAZGAN E.1978; ISTANBUL TEK. UNIV. BUL.; TUR; DA. 1978; VOL. 31; NO 1; PP. 110-128; ABS. TUR; BIBL. 8 REF.Article

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AN INVESTIGATION OF PHOTOMULTIPLIER BACKGROUNDWRIGHT AG.1983; JOURNAL OF PHYSICS E: SCIENTIFIC INSTRUMENTS; ISSN 0022-3735; GBR; DA. 1983; VOL. 16; NO 4; PP. 300-307; BIBL. 2 P.Article

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A MONOLITHIC 1 X 10 ARRAY OF INGAASP/INP PHOTODIODES WITH SMALL DARK CURRENT AND UNIFORM RESPONSIVITIESTAKAHASHI K; MUROTANI T; ISHII M et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 239-242; BIBL. 13 REF.Article

TRANSITION FROM TRANSIENT TO STEADY-STATE DARK CURRENTS IN AMORPHOUS AS₂SE₃.ABKOWITZ M; SCHER H.1977; PHILOS. MAG.; G.B.; DA. 1977; VOL. 35; NO 6; PP. 1585-1608; BIBL. 33 REF.Article

MEASUREMENTS OF MINORITY CARRIER INJECTION RATIOS IN AL-(SIO_X)-PSI STRUCTURESDICKEY HC; SZEDON JR; TEMOFONTE TA et al.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 400-403; BIBL. 5 REF.Conference Paper

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The Dark Current and Hot Pixel Percentage of James Webb Space Telescope 5 μm Cutoff HgCdTe Detector Arrays as Functions of TemperatureRAUSCHER, Bernard J; LINDLER, Don J; MOTT, David B et al.Publications of the Astronomical Society of the Pacific. 2011, Vol 123, Num 906, pp 953-957, issn 0004-6280, 5 p.Article

Photomultiplier dark pulsesBURNHAM, R; SCARL, D.Applied optics. 1985, Vol 24, Num 2, pp 293-295, issn 0003-6935Article

Dark current analysis of InSb photodiodesHOPKINS, F. K; BOYD, J. T.Infrared physics. 1984, Vol 24, Num 4, pp 391-395, issn 0020-0891Article

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