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REALISATION D'UN GROUPE D'EVAPORATION POUR L'ELABORATION DE TRANSDUCTEURS DE CDS: APPLICATION A L'EXCITATION D'HYPERSONS LONGITUDINAUX ET TRANSVERSES A 9 GHZ DANS DIVERS CRISTAUXDAUDIN BRUNO.1978; ; FRA; DA. 1978; (7)-116 F.; 30 CM; BIBL. DISSEM.; TH. DOCT.-ING./GRENOBLE 1, I.N.P.G./1978Thesis

Polar and nonpolar GaN quantum dotsDAUDIN, Bruno.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 47, issn 0953-8984, 473201.1-473201.15Article

Intentional and unintentional localization in InGaNOLIVER, Rachel A; DAUDIN, Bruno.Philosophical magazine (2003. Print). 2007, Vol 87, Num 13, issn 1478-6435, 128 p.Serial Issue

Boîtes quantiques dopées avec des ions de terres rares pour l'émission de lumière visible = Quantum boxes doped with rare earth ions for the emission of visible lightDAUDIN, Bruno; HORI, Yuji.Techniques de l'ingénieur. Sciences fondamentales. 2005, Vol AFP1, Num RE35, RE35.1-RE35.6Article

Does in form In-rich clusters in InGaN quantum wells?HUMPHREYS, C. J.Philosophical magazine (2003. Print). 2007, Vol 87, Num 13, pp 1971-1982, issn 1478-6435, 12 p.Article

Exciton and Biexciton Luminescence from Single GaN/AIN Quantum Dots in NanowiresRENARD, Julien; SONGMUANG, Rudeesun; BOUGEROL, Catherine et al.Nano letters (Print). 2008, Vol 8, Num 7, pp 2092-2096, issn 1530-6984, 5 p.Article

Localization of excitation in InGaN epilayersKACHKANOV, V; ODONNELL, K. P; PEREIRA, S et al.Philosophical magazine (2003. Print). 2007, Vol 87, Num 13, pp 1999-2017, issn 1478-6435, 19 p.Article

Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperatureMATA, Rafael; HESTROFFER, Karine; BUDAGOSKY, Jorge et al.Journal of crystal growth. 2011, Vol 334, Num 1, pp 177-180, issn 0022-0248, 4 p.Article

Comparative optical study of Eu3+ ions doping in InGaN/GaN quantum dots and GaN layer grown by molecular beam epitaxyANDREEV, Thomas; NGUYEN QUANG LIEM; HORI, Yuji et al.Optical materials (Amsterdam). 2006, Vol 28, Num 6-7, pp 775-779, issn 0925-3467, 5 p.Conference Paper

Anti-localization suppresses non-radiative recombination in GaInN/GaN quantum wellsHANGLEITER, A; NETZEL, C; FUHRMANN, D et al.Philosophical magazine (2003. Print). 2007, Vol 87, Num 13, pp 2041-2065, issn 1478-6435, 25 p.Article

Origin of localized excitons in in-containing three-dimensional bulk (Al, In, Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniquesCHICHIBU, S. F; UEDONO, A; MISHRA, U. K et al.Philosophical magazine (2003. Print). 2007, Vol 87, Num 13, pp 2019-2039, issn 1478-6435, 21 p.Article

Undoped and rare-earth doped GaN quantum dots on AlGaNHORI, Yuji; ANDREEV, Thomas; FLORIAN, Thomas et al.Physica status solidi. B. Basic research. 2006, Vol 243, Num 7, pp 1472-1475, issn 0370-1972, 4 p.Conference Paper

Phase separation in InxGa1-xNBARTEL, T. P; SPECHT, P; HO, J. C et al.Philosophical magazine (2003. Print). 2007, Vol 87, Num 13, pp 1983-1998, issn 1478-6435, 16 p.Article

Growth mode induced carrier localization in InGaN/GaN quantum wellsGRANDJEAN, N; FELTIN, E; BUTTE, R et al.Philosophical magazine (2003. Print). 2007, Vol 87, Num 13, pp 2067-2075, issn 1478-6435, 9 p.Article

Progress in the optical studies of single InGaN/GaN quantum dotsJARJOUR, A. F; OLIVER, R. A; TAYLOR, R. A et al.Philosophical magazine (2003. Print). 2007, Vol 87, Num 13, pp 2077-2093, issn 1478-6435, 17 p.Article

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