Polyaniline/silver nanocomposite preparation under extreme or non-classical conditionsDE BARROS, R. A; DE AZEVEDO, W. M.Synthetic metals. 2008, Vol 158, Num 21-24, pp 922-926, issn 0379-6779, 5 p.Article

A new and straightforward synthesis route for preparing Cds quantum DotsDE AZEVEDO, W. M; MENEZES, F. D.Journal of luminescence. 2012, Vol 132, Num 7, pp 1740-1743, issn 0022-2313, 4 p.Article

Formic acid an efficient solvent to prepare polyaniline/silicate glass composite using sol-gel techniqueDE AZEVEDO, W. M; BRONDANI, D. J.Journal of non-crystalline solids. 2001, Vol 296, Num 3, pp 224-229, issn 0022-3093Article

Silver hexacyanoferrate/conducting polymer compositeDE AZEVEDO, W. M; DE MATTOS, I. L; NAVARRO, M et al.Journal of materials science. Materials in electronics. 2006, Vol 17, Num 5, pp 367-371, issn 0957-4522, 5 p.Article

Energy levels and crystal field parameter of Eu³⁺ in {(C₄H₉)₄N}₃Eu(NCS)DE AZEVEDO, W. M; DE SA, G. F; FAUCHER, M et al.Solid state communications. 1983, Vol 46, Num 6, pp 465-468, issn 0038-1098Article

Numerical analysis of gate leakage current in AlGaN Schottky diodesOSVALD, J.Applied surface science. 2008, Vol 255, Num 3, pp 793-795, issn 0169-4332, 3 p.Conference Paper

Conducting polymer photopolymerization mechanism: The role of nitrate ions (NO₃^-)DE BARROS, R. A; AREIAS, M. C. C; DE AZEVEDO, W. M et al.Synthetic metals. 2010, Vol 160, Num 1-2, pp 61-64, issn 0379-6779, 4 p.Article

A monolithically integrated CMOS labchip using sensor devicesSCHÄFER, H; SCHÖLER, L; SEIBEL, K et al.Applied surface science. 2008, Vol 255, Num 3, pp 646-648, issn 0169-4332, 3 p.Conference Paper

Application of core-shell PEGylated CdS/Cd(OH)₂ quantum dots as biolabels of Trypanosoma cruzi parasitesCHAVES, C. R; FONTES, A; FARIAS, P. M. A et al.Applied surface science. 2008, Vol 255, Num 3, pp 728-730, issn 0169-4332, 3 p.Conference Paper

Arrangement of metal phthalocyanines on Ge (0 0 1) 2 x 1 surfacesHOLLAND, B. N; CABAILH, G; PELTEKIS, N et al.Applied surface science. 2008, Vol 255, Num 3, pp 775-777, issn 0169-4332, 3 p.Conference Paper

Calculation of electronic spectra of semiconductor nanostructures using the mirror boundary conditionsVOROBIEV, Yu. V; HORLEY, P. P; GORLEY, P. N et al.Applied surface science. 2008, Vol 255, Num 3, pp 665-668, issn 0169-4332, 4 p.Conference Paper

Effect of gas residence time on the morphology of silicon surface etched in SF₆ plasmasPESSOA, R. S; MACIEL, H. S; PETRACONI, G et al.Applied surface science. 2008, Vol 255, Num 3, pp 749-751, issn 0169-4332, 3 p.Conference Paper

Low dimensional silicon structures for photonic and sensor applicationsADAMO, R; ANOPCHENKO, A; HOSSAIN, S. M et al.Applied surface science. 2008, Vol 255, Num 3, pp 624-627, issn 0169-4332, 4 p.Conference Paper

Praseodymium silicide formation at the Pr₂O₃/Si interfaceWATAHIKI, Tatsuro; TINKHAM, Brad P; JENICHEN, Bernd et al.Applied surface science. 2008, Vol 255, Num 3, pp 758-760, issn 0169-4332, 3 p.Conference Paper

RHEED intensity oscillation of C₆₀ growth on GaAs substratesNISHINAGA, J; KAWAHARAZUKA, A; HORIKOSHI, Y et al.Applied surface science. 2008, Vol 255, Num 3, pp 682-684, issn 0169-4332, 3 p.Conference Paper

Semiconductor nanocrystals obtained by colloidal chemistry for biological applicationsSANTOS, B. S; FARIAS, P. M. A; FONTES, A et al.Applied surface science. 2008, Vol 255, Num 3, pp 796-798, issn 0169-4332, 3 p.Conference Paper

The effect of ultrasonic waves in conducting polymer solutionDE AZEVEDO, W. M; DE OLIVEIRA LUNA, A. J. H; SILVA, E. F. V. B. N et al.Ultrasonics sonochemistry. 2006, Vol 13, Num 5, pp 433-437, issn 1350-4177, 5 p.Article

Writing with conducting polymerDE BARROS, R. A; MARTINS, C. R; DE AZEVEDO, W. M et al.Synthetic metals. 2005, Vol 155, Num 1, pp 35-38, issn 0379-6779, 4 p.Article

Optical and electronic characterization of the band structure of blue methylene and rhodamine 6G-doped TiO₂ sol-gel nanofilmsTOMAS, S. A; PALOMINO, R; LOZADA, R et al.Microelectronics journal. 2005, Vol 36, Num 3-6, pp 570-573, issn 0959-8324, 4 p.Conference Paper

Area-selective epitaxy of GaAs by migration-enhanced epitaxy with As₂ and As₄ arsenic sourcesKAWAHARAZUKA, A; YOSHIBA, I; HORIKOSHI, Y et al.Applied surface science. 2008, Vol 255, Num 3, pp 737-739, issn 0169-4332, 3 p.Conference Paper

Assessment of electronic properties of InN_xSb_1-x for long-wavelength infrared detector applicationsBHUSAL, L; FREUNDLICH, A.Applied surface science. 2008, Vol 255, Num 3, pp 703-705, issn 0169-4332, 3 p.Conference Paper

Evaluation of Schottky junction parameters from current-voltage characteristics exhibiting large excess currentsHORVATH, Zs. J.Applied surface science. 2008, Vol 255, Num 3, pp 743-745, issn 0169-4332, 3 p.Conference Paper

Semi-interpenetrating polymer networks based on polyaniline and polyvinyl alcohol-glutaraldehydeDE AZEVEDO, W. M; DE SOUZA, J. M; DE MELO, J. V et al.Synthetic metals. 1999, Vol 100, Num 3, pp 241-248, issn 0379-6779Article

Electronic surface states on the MOVPE-prepared InGa-terminated InGaAs(1 0 0) (4 x 2)/c(8 x 2) surfaceSEIDEL, U; SAGOL, B. E; PETTENKOFER, C et al.Applied surface science. 2008, Vol 255, Num 3, pp 722-724, issn 0169-4332, 3 p.Conference Paper

Enhancement of the thermal transport in a culture medium with Au nanoparticlesJIMENEZ-PEREZ, J. L; GUTIERREZ FUENTES, R; MALDONADO ALVARADO, E et al.Applied surface science. 2008, Vol 255, Num 3, pp 701-702, issn 0169-4332, 2 p.Conference Paper