au.\*:("DEAL, M. D")
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A comparison of the diffusion behavior of ion-implanted Sn, Ge, and Si in gallium arsenideALLEN, E. L; MURRAY, J. J; DEAL, M. D et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 11, pp 3440-3449, issn 0013-4651Article
SUPREM 3.5―Process modeling of GaAs integrated circuit technologyDEAL, M. D; HANSEN, S. E; SIGMON, T. W et al.IEEE transactions on computer-aided design of integrated circuits and systems. 1989, Vol 8, Num 9, pp 939-951, issn 0278-0070Article
Microstructure of thermal hillocks on blanket Al thin filmsKIM, D.-K; HEILAND, B; NIX, W. D et al.Thin solid films. 2000, Vol 371, Num 1-2, pp 278-282, issn 0040-6090Article
On H passivation of Si donors in GaAs annealed with plasma-enhanced chemical vapor deposited silicon nitride capsVANASUPA, L. S; DEAL, M. D; PLUMMER, J. D et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 3, pp 870-871, issn 0013-4651, 2 p.Article
Modeling activation of implanted Si in GaAsVANASUPA, L. S; DEAL, M. D; PLUMMER, J. D et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 7, pp 2134-2140, issn 0013-4651Article
Schottky contact effects in the sidegating effect of GaAs devicesYI LIU; DUTTON, R. W; DEAL, M. D et al.IEEE electron device letters. 1992, Vol 13, Num 3, pp 149-151, issn 0741-3106Article
Diffusion of chromium in gallium arsenideDEAL, M. D; STEVENSON, D. A.Journal of applied physics. 1986, Vol 59, Num 7, pp 2398-2407, issn 0021-8979Article
Modeling co-implanted silicon and beryllium in gallium arsenideDEAL, M. D; ROBINSON, H. G.Solid-state electronics. 1990, Vol 33, Num 6, pp 665-673, issn 0038-1101Article
The solubility of chromium in gallium arsenideDEAL, M. D; STEVENSON, D. A.Journal of the Electrochemical Society. 1984, Vol 131, Num 10, pp 2343-2347, issn 0013-4651Article
Modeling uphill diffusion of Mg implants in GaAs using SUPREM-IVROBINSON, H. G; DEAL, M. D; AMARATUNGA, G et al.Journal of applied physics. 1992, Vol 71, Num 6, pp 2615-2623, issn 0021-8979Article
Suppression of Al-Ga interdiffusion by a WNx film on an AlxGa1-xAs/AlAs superlattice structureALLEN, E. L; PASS, C. J; DEAL, M. D et al.Applied physics letters. 1991, Vol 59, Num 25, pp 3252-3254, issn 0003-6951Article
Damage-induced uphill diffusion of implanted Mg and Be in GaAsROBINSON, H. G; DEAL, M. D; STEVENSON, D. A et al.Applied physics letters. 1990, Vol 56, Num 6, pp 554-556, issn 0003-6951Article
Diffusion kinetics of Si in GaAs and related defect chemistryLEE, K. H; STEVENSON, D. A; DEAL, M. D et al.Journal of applied physics. 1990, Vol 68, Num 8, pp 4008-4013, issn 0021-8979, 6 p.Article
Effects of stress on the electrical activation of implanted Si in GaAsVANASUPA, L. S; DEAL, M. D; PLUMMER, J. D et al.Applied physics letters. 1989, Vol 55, Num 3, pp 274-276, issn 0003-6951Article
