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A NEW C-MOS TECHNOLOGY USING ANISOTROPIC ETCHING OF SILICON.DECLERCQ MJ.1975; I.E.E.E. J., SOLID-STATE CIRCUITS; U.S.A.; DA. 1975; VOL. 10; NO 4; PP. 191-197; BIBL. 20 REF.Article

A THEORETICAL AND EXPERIMENTAL STUDY OF DMOS ENHANCEMENT/DEPLETION LOGIC. = ETUDE THEORIQUE ET EXPERIMENTALE DE LA LOGIQUE MOS A DOUBLE DIFFUSION UTILISANT DES TRANSISTORS A ENRICHISSEMENT ET A DEPLETIONDECLERCQ MJ; LAURENT T.1977; I.E.E.E.J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 3; PP. 264-270; BIBL. 17 REF.Article

AVALANCHE BREAKDOWN IN HIGH-VOLTAGE D-MOS DEVICES.DECLERCQ MJ; PLUMMER JD.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 1; PP. 1-4; BIBL. 11 REF.Article

OPTIMIZATION OF THE HYDRAZINE-WATER SOLUTION FOR ANISOTROPIC ETCHING OF SILICON IN INTEGRATED CIRCUIT TECHNOLOGY.DECLERCQ MJ; GERZBERG L; MEINDL JD et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 4; PP. 545-552; BIBL. 17 REF.Article

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