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ENERGY LEVELS OF SOME RARE-EARTH RELATED IMPURETIES IN GERMANIUMPEARTON SJ.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 109; NO 2; PP. K135-K138; BIBL. 8 REF.Article

HEAT DISSIPATION FROM SILICON CHIPS IN A VERTICAL PLATE, ELEVATED PRESSURE COLD WALL SYSTEMREISMAN A; BERKENBLIT M; MERZ CJ et al.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 2; PP. 391-411; BIBL. 4 REF.Article

FIELD DRIFT AND HYDROGENATION OF DEEP LEVEL DEFECTS ASSOCIATED WITH 1-MEV ION-IMPLANTED OXYGEN IN GERMANIUM DIODESTAVENDALE AJ; PEARTON SJ.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 6; PP. 3213-3215; BIBL. 36 REF.Article

ABSOLUTE ENERGY OF THE NITROGEN-RELATED ELECTRON TRAP IN GALLIUM PHOSPHIDEZDANSKY K; KRATENA L; MATYAS M JR et al.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 75; NO 1; PP. 335-339; ABS. RUS; BIBL. 15 REF.Article

DEEP LEVEL STUDIES OF HG1-XCDXTE. II: CORRELATION WITH PHOTODIODE PERFORMANCEPOLLA DL; REINE MB; JONES CE et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5132-5138; BIBL. 15 REF.Article

STUDY OF THE DEEP LEVELS IN A PROTON-BOMBARDED GALLIUM ARSENIDEATANASSOV R; ASANO T; FURUKAVA S et al.1981; BULG. J. PHYS.; ISSN 0323-9217; BGR; DA. 1981; VOL. 8; NO 6; PP. 611-614; ABS. RUS; BIBL. 12 REF.Article

CHARACTERIZATION OF ELECTRON TRAPS IN ION-IMPLANTED GAAS MESFET'S ON UNDOPED AND CR-DOPED LEC SEMI-INSULATING SUBSTRATESSRIRAM S; DAS MB.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 586-592; BIBL. 21 REF.Article

QUENCHED-IN DEEP LEVELS IN BORON-DOPED SILICONIOANNOU DE.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 39; NO 1; PP. 93-94; BIBL. 8 REF.Article

OBSERVATION OF DEEP LEVELS ASSOCIATED WITH THE GAAS/ALXGA1-XAS INTERFACE GROWN BY MOLECULAR BEAM EPITAXYMCAFEE SR; LANG DV; TSANG WT et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 6; PP. 520-522; BIBL. 13 REF.Article

EXTERNAL GENERATION OF GATE DELAYS IN A BOXCAR INTEGRATOR. APPLICATION TO DEEP LEVEL TRANSIENT SPECTROSCOPYKOSAI K.1982; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1982; VOL. 53; NO 2; PP. 210-213; BIBL. 4 REF.Article

ON THE RELATIONSHIP BETWEEN CHARGE- AND CURRENT-BASED DLTSTHURZO I; LALINSKI T.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 71; NO 1; PP. K83-K87; BIBL. 7 REF.Article

DEEP LEVEL PHOTOCAPACITANCE SPECTRA OF GREEN-EMITTING GAP LAMPS.IQBAL MZ.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 41; NO 2; PP. K155-K156; BIBL. 4 REF.Article

STUDY OF GROWN-IN DEFECTS AND EFFECT OF THERMAL ANNEALING IN AL0.3GA0.7AS AND GAAS LPE LAYERSLI SS; LIN CY; BEDAIR SM et al.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 2; PP. 273-287; BIBL. 10 REF.Article

PHOTOCONDUCTIVITE DES SEMICONDUCTEURS FORTEMENT DOPES ET COMPENSESOSIPOV VV; FOJGEL MG.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 11; PP. 2022-2028; BIBL. 11 REF.Article

Positron beam studies of transients in semiconductorsBELING, C. D; LING, C. C; CHEUNG, C. K et al.Applied surface science. 2006, Vol 252, Num 9, pp 3172-3182, issn 0169-4332, 11 p.Conference Paper

ELECTRON IRRADIATION INDUCED DEEP LEVELS IN P-INPSIBILLE A; BOURGOIN JC.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 10; PP. 956-958; BIBL. 15 REF.Article

DEEP LEVEL STUDIES OF HG1-XCDXTE. I: NARROW-BAND-GAP SPACE-CHARGE SPECTROSCOPYPOLLA DL; JONES CE.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5118-5131; BIBL. 47 REF.Article

DEEP LEVELS IN CO-DOPED INPSKOLNICK MS; TAPSTER PR; DEAN PJ et al.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 15; PP. 3333-3358; BIBL. 2 P.Article

MINORITY CARRIER TRAPS IN EPITAXIAL GALLIUM ARSENIDE PHOSPHIDEHENNING ID; THOMAS H.1981; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1981; VOL. 10; NO 2; PP. 361-377; BIBL. 11 REF.Article

STUDY OF SLOW DEGRADATION IN GAALAS LEDS BY DEEP-LEVEL TRANSIENT SPECTROSCOPYKONDO K; YAMAKOSHI S; KOTANI T et al.1981; FUJITSU SCI. TECH. J.; ISSN 0016-2523; JPN; DA. 1981; VOL. 17; NO 3; PP. 105-120; BIBL. 17 REF.Article

DEEP-CENTER PHOTOLUMINESCENCE IN UNDOPED SEMI-INSULATING GAAS: 0,68 EV BAND DUE TO THE MAIN DEEP DONORPHIL WON YU.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 43; NO 12; PP. 953-956; BIBL. 21 REF.Article

CAUSES DE LA FORTE VARIATION EN FONCTION DU CHAMP DES SECTIONS EFFICACES DE CAPTURE DES ELECTRONS DANS LES NIVEAUX D'IMPURETE PROFONDS D'UN SEMICONDUCTEUR AVEC DES VALLEES DE LA BANDE DE CONDUCTION D'ENERGIES DIFFERENTESVOROB'EV YU V.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 11; PP. 2033-2035; BIBL. 5 REF.Article

DIAMAGNETISME DES CENTRES D'IMPURETE PROFONDS A DEUX ELECTRONS DANS LES SEMICONDUCTEURSBELORUSETS ED; IMANOV EH Z; MAMATKULOV BR et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 1; PP. 89-92; BIBL. 8 REF.Article

QUELQUES PROPRIETES DES NIVEAUX PIEGES FORMES PAR UN TRAITEMENT THERMIQUE DE SI NASTROVA EV; VORONKOV VB; LEBEDEV AA et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 11; PP. 2074-2075; BIBL. 4 REF.Article

DEEP LEVEL SPECTROSCOPY AND SCHOTTKY BARRIER CHARACTERISTICS OF LPE N- AND P-INPNICKEL H; KUPHAL E.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 65; NO 2; PP. 583-588; ABS. GER; BIBL. 14 REF.Article

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