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DEEP LEVEL SPECTROSCOPY AND SCHOTTKY BARRIER CHARACTERISTICS OF LPE N- AND P-INPNICKEL H; KUPHAL E.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 65; NO 2; PP. 583-588; ABS. GER; BIBL. 14 REF.Article

GOLD GETTERING IN SILICON BY PHOSPHOROUS DIFFUSION AND ARGON IMPLANTATION: MECHANISMS AND LIMITATIONSLECROSNIER D; PAUGAM J; PELOUS G et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5090-5097; BIBL. 38 REF.Article

TEMPERATURE DEPENDENCE OF PEAK HEIGHTS IN DEEP-LEVEL TRANSIENT SPECTROSCOPYROCKETT PI; PEAKER AR.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 22; PP. 838-839; BIBL. 3 REF.Article

THE ELECTRICAL PROPERTIES OF SULPHUR IN SILICONBROTHERTON SD; KING MJ; PARKER GJ et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4649-4658; BIBL. 28 REF.Article

CHANGE OF INTERFACE STATE SPECTRUM IN AL/SIO2/SI STRUCTURES WITH BIASING DURING ELECTRON IRRADIATIONROSENCHER E; BOIS D.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 601-603; BIBL. 17 REF.Article

DEEP IMPURITY LEVELS IN INP LEC CRYSTALSYAMAZOE Y; SASAI Y; NISHINO T et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 2; PP. 347-354; BIBL. 21 REF.Article

DEEP LEVEL STUDIES OF HG1-XCDXTE. II: CORRELATION WITH PHOTODIODE PERFORMANCEPOLLA DL; REINE MB; JONES CE et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5132-5138; BIBL. 15 REF.Article

DOTIERUNGSEIGENSCHAFTEN VON EISEN IN SILIZIUM = PROPRIETES DE DONNEUR DU FER DANS LE SILICIUMLEMKE H.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 64; NO 1; PP. 215-224; ABS. ENG; BIBL. 11 REF.Article

OBSERVATION OF PHOTOINDUCED CHANGES IN THE BULK DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS SILICONLANG DV; COHEN JD; HARBISON JP et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 6; PP. 474-476; BIBL. 11 REF.Article

ELECTRON TRAPS CREATED BY HIGH TEMPERATURE ANNEALING IN MBE N-GAASDAY DS; OBERSTAR JD; DRUMMOND TJ et al.1981; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1981; VOL. 10; NO 3; PP. 445-453; BIBL. 19 REF.Article

QUENCHED-IN DEEP LEVELS IN BORON-DOPED SILICONIOANNOU DE.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 39; NO 1; PP. 93-94; BIBL. 8 REF.Article

ELECTRICAL PROPERTIES OF SINGLE-CRYSTAL SILICON LAYERS FORMED FROM POLYCRYSTALLINE SILICON BY SOLID PHASE EPITAXYWANG KL; LI GP; SIGMON TW et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 9; PP. 709-711; BIBL. 15 REF.Article

EVALUATION OF INTERFACE STATES IN MOS STRUCTURES BY DLTS WITH A BIPOLAR RECTANGULAR WEIGHTING FUNCTIONTOKUDA Y; HAYASHI M; USAMI A et al.1981; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1981; VOL. 14; NO 5; PP. 895-898; BIBL. 9 REF.Article

EVIDENCE FOR CU-RELATED DEEP STATES IN GAAS, EARLIER ASCRIBED TO NIKUMAR V; LEDEBO LA.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4866-4868; BIBL. 15 REF.Article

Etude de la dégradation des structures MOS soumises à une injection de type tunnel Fowler-Nordheim d'électronsBouchakour, Rachid; Fournet, G.1989, 210 p.Thesis

DEEP LEVEL STUDIES OF HG1-XCDXTE. I: NARROW-BAND-GAP SPACE-CHARGE SPECTROSCOPYPOLLA DL; JONES CE.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5118-5131; BIBL. 47 REF.Article

A SYSTEM FOR MEASURING DEEP-LEVEL SPATIAL CONCENTRATION DISTRIBUTIONSWANG KL.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 449-453; BIBL. 22 REF.Article

CARBON-ACCEPTOR PAIR CENTERS (X CENTERS) IN SILICONJONES CE; SCHAFER D; SCOTT W et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5148-5158; BIBL. 29 REF.Article

PROPRIETES PHOTOELECTRIQUES DES MATERIAUX DE GAAS ETUDIEES PAR DES TECHNIQUES A LASER PULSE = PHOTOELECTRON PROPERTIES OF GAAS MATERIALS STUDIED BY PULSED LASER TECHNIQUESAGUIR KHALIFA.1981; ; FRA; DA. 1981; 209 P.; 30 CM; BIBL. 5 P.; TH. 3E CYCLE: E.E.A. MATER. COMPOS. ACTIFS/TOULOUSE 3/1981/2594Thesis

Deep level transient spectroscopy of defects in high-energy light-particle irradiated SiAURET, F. Danie; DEENAPANRAY, Prakash N. K.Critical reviews in solid state and materials sciences. 2004, Vol 29, Num 1, pp 1-44, issn 1040-8436, 44 p.Article

Excitonic recombination processes in GaAs grown by close-space vapour transportBOUZRARA, L; AJJEL, R; MEJRI, H et al.Microelectronics journal. 2004, Vol 35, Num 7, pp 577-580, issn 0959-8324, 4 p.Article

DLTS of low-energy hydrogen ion implanted n-SiDEENAPANRAY, Prakash N. K.Physica. B, Condensed matter. 2003, Vol 340-42, pp 719-723, issn 0921-4526, 5 p.Conference Paper

New electron and hole traps in GaAsP alloyTEO, K. L; LI, M. F; GOO, C. H et al.International journal of electronics. 1997, Vol 83, Num 1, pp 29-35, issn 0020-7217Article

U-shaped distribution of interface states in metal-(Langmuir-Blodgett) Si structures with phthalocyanine Langmuir-Blodgett filmsBARANCOK, D; CIRAK, J; TOMCIK, P et al.Thin solid films. 1994, Vol 243, Num 1-2, pp 463-467, issn 0040-6090Conference Paper

The effect of the CdCl2 treatment on CdTe/CdS thin film solar cells studied using deep level transient spectroscopyKOMIN, V; TETALI, B; VISWANATHAN, V et al.Thin solid films. 2003, Vol 431-32, pp 143-147, issn 0040-6090, 5 p.Conference Paper

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