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STACKING FAULT GENERATION SUPPRESSION AND GROWN-IN DEFECT ELIMINATION IN DISLOCATION FREE SILICON WAFERS BY HCL OXIDATION.SHIRAKI H.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 1; PP. 1-10; BIBL. 23 REF.Article

X-RAY DIFFRACTION FROM CLOSE-PACKED STRUCTURES WITH STACKING FAULTS. I. HCC CRYSTALS.LELE S.1974; ACTA CRYSTALLOGR., A; DANEM.; DA. 1974; VOL. 30; NO 4; PP. 509-513; BIBL. 20 REF.Article

SUPPRESSION OF STACKING FAULT GENERATION IN SILICON WAFER BY HCL ADDED TO DRY O2 OXIDATION.SHIRAKI H.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 1; PP. 83-86; BIBL. 15 REF.Article

EFFECT OF GROWTH PARAMETERS ON FORMATION AND ELIMINATION OF VACANCY CLUSTERS IN DISLOCATION-FREE SILICON CRYSTALS.DE KOCK AJR; ROKSNOER PJ; BOONEN PGT et al.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 22; NO 4; PP. 311-320; BIBL. 28 REF.Article

THE ARCING OF X-RAY DIFFRACTION SPOTS IN X-RAY PHOTOGRAPHS FROM CADMIUM IODIDE CRYSTALSTIWARI RS; PRASAD R; SRIVASTAVA ON et al.1973; ACTA CRYSTALLOGR., A; DANEM.; DA. 1973; VOL. 29; NO 2; PP. 154-156; H.T. 1; BIBL. 15 REF.Serial Issue

LOW-ANGLE BOUNDARIES IN SILICON CRYSTALS.EIDENSON AM; DASHEVSKY M YA.1975; KRISTALL U. TECH.; DTSCH.; DA. 1975; VOL. 10; NO 6; PP. 681-693; ABS. RUSSE; BIBL. 14 REF.Article

QUELQUES LOIS DE LA FORMATION DES DEFAUTS DANS LES COUCHES DE SILICIUM OBTENUES A 440-1000OC PAR SUBLIMATION SOUS VIDEKUZNETSOV VP; POSTNIKOV VV; KOMRAKOVA TD et al.1975; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1975; VOL. 20; NO 3; PP. 626-630; H.T. 1; BIBL. 15 REF.Article

ON THE NATURE OF SWIRL DEFECTS IN FLOAT ZONE SI CRYSTALS.PETROFF PM; DE KOCK AJR.1976; J. CRYST. GROWTH.; NETHERL.; DA. 1976; VOL. 35; NO 3; PP. 345-346; BIBL. 9 REF.Article

A COMMENT ON THE "CHARACTERIZATION OF SWIRL DEFECTS IN FLOATING ZONE SI CRYSTALS" BY P.M. PETROFF AND A.J.R. DE KOCK.MATTHEWS JW; VAN VECHTEN JA; PETROFF PM et al.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 35; NO 3; PP. 343-346; BIBL. 31 REF.Article

CHARACTERIZATION OF LINBO3 SINGLE CRYSTALS BY X-RAY TOPOGRAPHY.SUGII K; MIYAZAWA S; KONDO S et al.1975; REV. ELECTR. COMMUNIC. LAB.; JAP.; DA. 1975; VOL. 23; NO 5-6; PP. 569-580; BIBL. 9 REF.Article

ECART A LA STOECHIOMETRIE DES CRISTAUX DE INAS OBTENUS PAR LA METHODE D'ENCAPSULATION LIQUIDEMARBAKH AL; PERMINOVA LG.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 9; PP. 1560-1563; BIBL. 8 REF.Article

A STUDY OF GROWTH DEFECTS IN LEAD GERMANATE CRYSTALS.HOULTON MR; JONES GR; ROBERTSON DS et al.1975; J. PHYS. D; G.B.; DA. 1975; VOL. 8; NO 3; PP. 219-222; H.T. 2; BIBL. 11 REF.Article

THE INTRODUCTION OF DISLOCATIONS DURING THE GROWTH OF FLOATING-ZONE SILICON CRYSTALS AS A RESULT OF POINT DEFECT CONDENSATION.DE KOCK AJR; ROKSNOER PJ; BOONEN PGT et al.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 30; NO 3; PP. 279-294; BIBL. 48 REF.Article

THE ORIGIN OF TRANSVERSE STRIATIONS IN DOPED ORGANIC CRYSTALS.SCOTT RAM; ANSON LW.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 29; NO 2; PP. 147-154; BIBL. 20 REF.Article

DEFAUTS DANS LES CRISTAUX DE CDSE FORMES A PARTIR D'UNE PHASE GAZEUSEVASILEVSKAYA VN; BULAKH BM; SHEJNKMAN MK et al.1974; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1974; VOL. 10; NO 9; PP. 1733-1734; BIBL. 4 REF.Article

DEFECT FORMATION IN CRYSTALS GROWN FROM AQUEOUS SOLUTIONS. GROWTH RATE OF BARIUM SULPHATE CRYSTALS AND ITS INFLUENCE ON THEIR DEFECT CONTENT.MELIKHOV IV; VUKOVIC Z.1975; J. CHEM. SOC., FARADAY TRANS., 1; G.B.; DA. 1975; VOL. 71; NO 10; PP. 2017-2030; H.T. 1; BIBL. 25 REF.Article

IMPERFECTIONS CRISTALLINES DANS LES COUCHES EPITAXIQUES DE GEKOSTIKOVA KP.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 9; PP. 1545-1547; H.T. 1; BIBL. 7 REF.Article

HALF-WIDTH AND PEAK-INTENSITY MEASUREMENT OF A ROCKING CURVE OBTAINED FROM SILICON ON SAPPHIRE USING SOFT X-RAY BEAMS.KISHINO S; IIDA S; AOKI S et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 7; PP. 3138-3140; BIBL. 17 REF.Article

PHOTOCONDUCTIBILITE ET RESONANCE PARAMAGNETIQUE ELECTRONIQUE DES DEFAUTS DANS LES MEMBRANES EPITAXIALES DU DIAMANTSAMSONENKO ND; BUJPOV LL; KARPUKHINA TA et al.1977; SINTET. ALMAZY, U.S.S.R.; S.S.S.R.; DA. 1977; NO 2; PP. 6-8; BIBL. 11 REF.Article

A MECHANISM FOR LIQUID-PHASE EPITAXIAL GROWTH OF NONEQUILIBRIUM COMPOSITIONS PRODUCING A COHERENT INTERFACE.HIRTH JP; STRING FELLOW GB.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 5; PP. 1813-1814; BIBL. 14 REF.Article

DEGRADATION OF CZOCHRALSKI SILICATE OXYAPATITE CRYSTALS BY THE THERMOMIGRATION OF LIQUID DROPS.HOPKINS RH; SEIDENSTICKER RG; STEWART AM et al.1976; J. CRYST. GROWTH; NETHERL; DA. 1976; VOL. 33; NO 2; PP. 223-231; BIBL. 18 REF.Article

STRUCTURE DE DEFAUTS DES CRISTAUX DE GRENAT DE FER-YTTRIUM OBTENUS A PARTIR D'UN PRODUIT DE FUSION NON STOECHIOMETRIQUEBALBASHOV AM; TSVETKOVA AA; CHERVONENKIS A YA et al.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 1; PP. 108-111; H.T. 1; BIBL. 3 REF.Article

EPITAXIAL GROWTH OF METAL SINGLE-CRYSTAL FILMS.GRUNBAUM E.1974; VACUUM; G.B.; DA. 1974; VOL. 24; NO 4; PP. 153-164; BIBL. 1 P. 1/2Article

ETUDE DES DEFAUTS CREES DANS DES CALCITES SYNTHETIQUES SOUMISES A DES CONDITIONS EXTERIEURES DE CROISSANCE VARIABLES.LEFAUCHEUX F; ROBERT MC.1974; HIGH TEMPER.-HIGH PRESS.; G.B.; DA. 1974; VOL. 6; NO 6; PP. 645-656; ABS. ANGL.; BIBL. 6 REF.Article

CINETIQUE DE CROISSANCE DES GRAINS ET DE CICATRISATION DES DEFAUTS VOLUMIQUESPERVUSHIN YU V; BOGATYREV VA.1983; ZURNAL FIZICESKOJ HIMII; ISSN 0044-4537; SUN; DA. 1983; VOL. 57; NO 1; PP. 65-67; BIBL. 11 REF.Article

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