"ANNIHILATION" DE TRACES DANS DES CRISTAUX NON METALLIQUESGEGUZIN YA E; ZABRODSKIJ YU R; KOSHKIN VM et al.1979; FIZ. TVERD. TELA; SUN; DA. 1979; VOL. 21; NO 6; PP. 1755-1760; BIBL. 10 REF.Article

EVOLUTION MONO- ET BIMOLECULAIRE DANS LA CINETIQUE DU PROCESSUS DE RECUIT THERMIQUE DES CENTRES COLORESALTYMYSHOV L.1977; FIZ. TVERD. TELA; S.S.S.R.; DA. 1977; VOL. 19; NO 8; PP. 1344-1347; BIBL. 5 REF.Article

ON THE VALIDITY OF INTERPRETATION OF SOME GRAIN BOUNDARY PROCESSES BASED ON THE ASSUMPTION ABOUT THE EXISTENCE OF UNRELAXED EXTRINSIC GRAIN BOUNDARY DISLOCATIONSVARIN RA.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 73; NO 1; PP. K51-K55; BIBL. 28 REF.Article

CONCENTRATION A L'EQUILIBRE DES LACUNES AU VOISINAGE DE SURFACES LIBRES ET ANNIHILATION PAR AUTODIFFUSION DES PORES DANS UN CORPS SOLIDE CONTRAINTROJTBURD AL.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 4; PP. 1074-1078; BIBL. 16 REF.Article

THE RANDOM WALK OF A CLOUD OF LATTICE POINTS AS A MODEL FOR TRAPPING OF POINT DEFECTS BY EXTENDED SINKSFASTENAU RHJ.1979; PHYS. STRATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 53; NO I; PP. K39-K42; BIBL. 12 REF.Article

ANALYSIS OF DEFECT ANNIHILATION PROCESS NEAR 100^OC IN QUENCHED GERMANIUMKAMIURA Y; MASHIMOTO F.1979; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1979; VOL. 18; NO 9; PP. 1693-1697; BIBL. 9 REF.Article

PROBABILITE DE L'ANNIHILATION DES COMPOSANTES D'UNE PAIRE PRIMAIRE F-H LORS D'UN MOUVEMENT THERMOACTIVELISITSYN VM; SIGIMOV VI.1977; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1977; VOL. 20; NO 10; PP. 41-44; BIBL. 22 REF.Article

ANNIHILATION OF STACKING FAULTS IN SILICON BY IMPURITY DIFFUSION.HASHIMOTO H; SHIBAYAMA H; MASAKI H et al.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 12; PP. 1899-1902; BIBL. 24 REF.Article

COMPUTER SIMULATION OF THE GLIDE MOTION OF A DISLOCATION GROUP CONTAINING A SOURCEPATU; LEI CHUNG ZI; SHIH CHANG HSU et al.1981; MATER. SCI. ENG.; ISSN 0025-5416; CHE; DA. 1981; VOL. 49; NO 2; PP. 133-139; BIBL. 15 REF.Article

MECANISME DE FORMATION ET DE DISPERSION DES DEFAUTS DANS DES CRISTAUX IONIQUESVAKHIDOV SH A; DZHUMANOV S.1980; DOKL. AKAD. NAUK UZ. S.S.R.; SUN; DA. 1980; NO 7; PP. 37-39; BIBL. 9 REF.Article

BIAS FACTORS FOR USE IN REACTION-RATE-THEORY ANALYSIS OF VOID SWELLING AND RADIATION CREEPNICHOLS FA.1978; RAD. EFFECTS; GBR; DA. 1978; VOL. 39; NO 3-4; PP. 169-175; BIBL. 18 REF.Article

ANNIHILATION DES DISINCLINAISONS A INDICE DE FRANK M=+2 DANS LES CRISTAUX LIQUIDES NEMATIQUESSONIN AS; CHUVYROV AN; SOBACHKIN AS et al.1976; FIZ. TVERD. TELA; S.S.S.R.; DA. 1976; VOL. 18; NO 10; PP. 3099-3101; BIBL. 6 REF.Article

EFFICIENCY OF VACANCY ANNIHILATION AT A SURFACE AND AT DISLOCATION LOOPS IN QUENCHED ALUMINUM = EFFICIENCE DE L'ANNIHILATION DE LACUNES A UNE SURFACE ET AUX BOUCLES DE DISLOCATIONS DANS L'ALUMINIUM TREMPELAM NQ; HOFF HA; OKAMOTO PR et al.1979; ACTA METALLURG.; USA; DA. 1979; VOL. 27; NO 5; PP. 799-805; ABS. FRE/GER; BIBL. 24 REF.Article

STACKING FAULT ANNIHILATION DEPENDENCE ON SURFACE ORIENTATION IN SILICONHAYAFUJI Y; KAWADO S.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 1215-1217; BIBL. 17 REF.Article

ANNEALING-OUT OF POINT DEFECTS IN QUENCHED CO-GA BETA ' SINGLE CRYSTALSSCHWAB R; GEROLD V.1980; ACTA METALL.; ISSN 0001-6160; USA; DA. 1980; VOL. 28; NO 4; PP. 433-441; ABS. FRE/GER; BIBL. 12 REF.Article

ANNEALING BEHAVIOR OF THE OXYGEN DONOR IN SILICONKANAMORI A.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 4; PP. 287-289; BIBL. 10 REF.Article

HIGH OXYGEN CZOCHRALSKI SILICON CRYSTAL GROWTH RELATIONSHIP TO EPITAXIAL STACKING FAULTSKATZ LE; HILL DW.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 7; PP. 1151-1155; BIBL. 15 REF.Article

FRENKEL PAIR STABILITY IN A HEXAGONAL CLOSE PACKED LATTICEMONTI AM; SAVINO EJ.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 92; NO 1; PP. K39-K42; BIBL. 7 REF.Article

LASER IRRADIATION OF SILICON CONTAINING MISFIT DISLOCATIONSHOFKER WK; OOSTHOEK DP; EGGERMONT GEJ et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 10; PP. 690-692; BIBL. 11 REF.Article

L'EMISSION ACOUSTIQUE LORS DE L'ANNIHILATION DES DISLOCATIONSDRUZHININ AG.1979; FIZ. TVERD. TELA; SUN; DA. 1979; VOL. 21; NO 7; PP. 1951-1957; BIBL. 12 REF.Article

ELECTRON MICROSCOPE STUDY OF STACKING FAULT FORMATION IN BORON IMPLANTED SILICON.COMER JJ.1978; RAD. EFFECTS; G.B.; DA. 1978; VOL. 36; NO 1-2; PP. 57-61; BIBL. 18 REF.Article

SUPPRESSION OF OXIDATION-STACKING FAULT GENERATION BY PREANNEALING.KISHINO S; ISOMAE S; TAMURA M et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 1; PP. 1-3; BIBL. 18 REF.Article

GENERATION AND ANNIHILATION OF STACKING FAULTS IN OXIDIZED SILICON. = GENERATION ET ANNIHILATION DE DEFAUTS D'EMPILEMENT DANS LE SILICIUM OXYDEHASHIMOTO H; SHIBAYAMA H; ISHIKAWA H et al.1977; FUJITSU SCI. TECH. J.; JAP.; DA. 1977; VOL. 13; NO 1; PP. 73-86; BIBL. 18 REF.Article

ON THE DOPING DEPENDENCE OF OXIDATION-INDUCED STACKING FAULT SHRINKAGE IN SILICONFAIR RB; CARIM A.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 10; PP. 2319-2321; BIBL. 8 REF.Article

GETTERING OF CRYSTALLINE DEFECTS IN SI BY BENDINGSAWADA R; KARAKI T; WATANABE J et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 5; PP. 368-369; BIBL. 9 REF.Article