au.\*:("DEGENDT, S")
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Charge trapping and dielectric reliability in alternative gate dielectrics, a key challenge for integrationKERBER, A; CATTIER, E; DEGRAEVE, R et al.WODIM : workshop on dielectrics in microelectronics. 2003, pp 45-52, isbn 2-9514840-0-3, 8 p.Conference Paper
Device performance of transistors with high-κ dielectrics using cross-wafer-scaled interface-layer thicknessO'SULLIVAN, B. J; KAUSHIK, V. S; RAGNARSSON, L.-A et al.IEEE electron device letters. 2006, Vol 27, Num 7, pp 546-548, issn 0741-3106, 3 p.Article
Device scaling of polysilicon: hafnium oxide gate dielectric using chemical oxide interfaceTSAI, W; LIN, S; ONSIA, B et al.WODIM : workshop on dielectrics in microelectronics. 2003, pp 117-120, isbn 2-9514840-0-3, 4 p.Conference Paper
Application of combinatorial methodologies for work function engineering of metal gate/high-κ advanced gate stacksGREEN, M. L; CHANG, K.-S; DEGENDT, S et al.Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 2209-2212, issn 0167-9317, 4 p.Conference Paper
Impact of defects on the high-k/MG stack : The electrical characterization challengePANTISANO, Luigi; RAGNARSSON, L.-A; HOUSSA, M et al.Materials science in semiconductor processing. 2006, Vol 9, Num 6, pp 880-884, issn 1369-8001, 5 p.Conference Paper
Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor depositionTSAI, W; CARTER, R. J; VANDERVORST, W et al.Microelectronic engineering. 2003, Vol 65, Num 3, pp 259-272, issn 0167-9317, 14 p.Article
Implementation of the IMEC-clean in advanced CMOS manufacturingMEURIS, M; ARNAUTS, S; HEYNS, M. M et al.IEEE international symposium on semiconductor manufacturing conference. 1999, pp 157-160, isbn 0-7803-5403-6Conference Paper
Consideration of the chemical reactivity of trace impurities present in a glow dischargeOHORODNIK, S. K; DEGENDT, S; TONG, S. L et al.Journal of analytical atomic spectrometry (Print). 1993, Vol 8, Num 6, pp 859-865, issn 0267-9477Conference Paper