EDGE DISLOCATION BEHAVIOUR IN AU-N-SILICON DIODES.MANTOVANI S; DEL PENNINO U.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 30; NO 2; PP. 747-754; ABS. ALLEM.; BIBL. 18 REF.Article

ENERGY BAND ASSOCIATED WITH DANGLING BONDS IN SILICONMANTOVANI S; DEL PENNINO U; VALERI S et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 22; NO 4; PP. 1926-1932; BIBL. 39 REF.Article

CAPACITANCE MEASUREMENTS AS A NEW TOAL TO INVESTIGATE THE ELECTRONIC STATES OF DISLOCATIONS IN SEMICONDUCTORS.MANTOVANI S; DEL PENNINO U; MAZZEGA E et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 2; PP. 451-457; ABS. ALLEM.; BIBL. 11 REF.Article

EDGE DISLOCATION ENERGY LEVEL IN SILICONMANTOVANI S; MAZZEGA E; VALERI S et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 50; NO 1; PP. K123-K126; BIBL. 10 REF.Article

ELS INVESTIGATION OF THE SI-PD INTERFACEDEL PENNINO U; SASSAROLI P; VALERI S et al.1982; SURFACE SCIENCE; ISSN 0039-6028; NLD; DA. 1982; VOL. 122; NO 2; PP. 307-316; BIBL. 22 REF.Article

VISCOSITY OF THE ICE SURFACE LAYERMANTOVANI S; VALERI S; LORIA A et al.1980; J. CHEM. PHYS.; ISSN 0021-9606; USA; DA. 1980; VOL. 72; NO 2; PP. 1077-1083; BIBL. 27 REF.Article

Oxidation behaviour of nickel silicides investigated by AES and XPSVALERI, S; DEL PENNINO, U; SASSAROLI, P et al.Surface science. 1983, Vol 134, Num 3, pp L537-L542, issn 0039-6028Article

Oxidation behaviour of nickel silicides investigated by AES and XPS = Untersuchung des Oxidationsverhaltens von Nickelsiliciden mit Hilfe des AES- und XPS-VerfahrensVALERI, S; DEL PENNINO, U; SASSAROLI, P et al.Surface science. 1983, Vol 134, Num 3, pp L537-L542, issn 0039-6028Article

Vibrational and collective excitations of the Gs/GaAs(110) interfaceCOMPANO, R; DEL PENNINO, U; MARIANI, C et al.Physical review. B, Condensed matter. 1992, Vol 46, Num 11, pp 6955-6960, issn 0163-1829Article

Azimuthal dependence of the electronic excitations in GaAs(110)DEL PENNINO, U; BETTI, M. G; MARIANI, C et al.Surface science. 1988, Vol 207, Num 1, pp 133-141, issn 0039-6028Article

VALENCE PHOTOEMISSION STUDY OF TEMPERATURE DEPENDENT REACTION PRODUCTS IN NI-SI INTERFACES AND THIN FILMS = ETUDE PAR PHOTOEMISSION DE VALENCE DES PRODUITS DE LA REACTION DEPENDANT DE LA TEMPERATURE DANS LES INTERFACES NI-SI ET LES COUCHES MINCESABBATI I; BRAICOVICH L; DE MICHELIS B et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 43; NO 3; PP. 199-202; BIBL. 22 REF.Article

Study of the transition from the ideal Si(111)-H(1 x 1) surface to the (7 x 7) reconstruction by HREELS, UPS and LEEDDE RENZI, V; BIAGI, R; DEL PENNINO, U et al.Surface science. 2002, Vol 497, Num 1-3, pp 247-253, issn 0039-6028Article

Hole-plasmon damping on heavily doped p-type GaAs(110)BIAGI, R; MARIANI, C; DEL PENNINO, U et al.Physical review. B, Condensed matter. 1992, Vol 46, Num 4, pp 2467-2472, issn 0163-1829Article

One-dimensional dislocation-related electronic states at the GaAs(110)-Bi(1 × 1) interfaceCOMPANO, R; DEL PENNINO, U; MARIANI, C et al.Physical review letters. 1992, Vol 68, Num 7, pp 986-989, issn 0031-9007Article

Antimony chemisorption onto GaAs(110) studied by high resolution electron energy loss spectroscopyMARIANI, C; ANNOVI, G; DEL PENNINO, U et al.Surface science. 1991, Vol 251-52, pp 218-222, issn 0039-6028, 5 p.Conference Paper

Inelastic electron scattering investigations of the Sb/GaAs(110) systemANNOVI, G; GRAZIA BETTI, M; DEL PENNINO, U et al.Physical review. B, Condensed matter. 1990, Vol 41, Num 17, pp 11978-11991, issn 0163-1829, 14 p.Article

High resolution electron energy loss spectroscopy study of the Sb-GaAs(110) systemANNOVI, G; BETTI, M. G; DEL PENNINO, U et al.Vacuum. 1990, Vol 41, Num 1-3, pp 695-698, issn 0042-207X, 4 p.Conference Paper

Bismuth and antimony on GaAs(110) : dielectric and electronic propertiesBETTI, M. G; PEDIO, M; DEL PENNINO, U et al.Physical review. B, Condensed matter. 1992, Vol 45, Num 24, pp 14057-14064, issn 0163-1829Article

AES study of room temperature oxygen interaction with near noble metal-silicon compounds surfacesVALERI, S; DEL PENNINO, U; LOMELLINI, P et al.Surface science. 1985, Vol 161, Num 1, pp 1-11, issn 0039-6028Article

Antimony induced states in Sb/InP(110) and Sb/GaAs(110) interfaces studied by high resolution electron energy loss spectroscopyBETTI, M. G; PEDIO, M; DEL PENNINO, U et al.Surface science. 1991, Vol 251-52, pp 209-212, issn 0039-6028, 4 p.Conference Paper

Ion-beam-induced modification of Ni silicides investigated by Auger-electron spectroscopyVALERI, S; DEL PENNINO, U; SASSAROLI, P et al.Physical review. B, Condensed matter. 1983, Vol 28, Num 8, pp 4277-4283, issn 0163-1829Article

Surface modification of InAs(110) surface by low energy ion sputteringMARTINELLI, V; SILLER, L; BETTI, M. G et al.Surface science. 1997, Vol 391, Num 1-3, pp 73-80, issn 0039-6028Article

Effects of chemical environment in the lineshape of silicon L_2,3VV Auger spectra of nickel silicidesDEL PENNINO, U; SASSAROLI, P; VALERI, S et al.Journal of physics. C. Solid state physics. 1983, Vol 16, Num 32, pp 6309-6319, issn 0022-3719Article

Solid-state effects on the valence-band 4d-photoionization cross sections at the Cooper minimum = Effets de l'état solide sur les sections efficaces de photoionisation 4d de la bande de valence au minimum de CooperABBATI, I; BRAICOVICH, L; ROSSI, G et al.Physical review letters. 1983, Vol 50, Num 22, pp 1799-1802, issn 0031-9007Article

Metal work-function changes induced by organic adsorbates : A combined experimental and theoretical studyDE RENZI, V; ROUSSEAU, R; MARCHETTO, D et al.Physical review letters. 2005, Vol 95, Num 4, pp 046804.1-046804.4, issn 0031-9007Article