Influence of hydrogen desorption on the generation of defects in LEPECVDROSENBLAD, C; DELLER, H. R; VON KÄNEL, H et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 58, Num 1-2, pp 76-80, issn 0921-5107Article

Epitaxial growth of Si by low-energy DC-plasma chemical vapor depositionMATEEVA, E; DELLER, H. R; KAFADER, U et al.Journal of materials science letters. 1998, Vol 17, Num 18, pp 1545-1547, issn 0261-8028Article

X-ray curve characterization of homo-epitaxial layers on silicon deposited after DC hydrogen cleaningDOMMANN, A; HERRES, N; DELLER, H. R et al.Journal of physics. D, Applied physics (Print). 1995, Vol 28, Num 4A, pp A144-A148, issn 0022-3727Conference Paper

Low temperature epitaxial growth by LEPECVDROSENBLAD, C; DELLER, H. R; GRAF, T et al.Journal of crystal growth. 1998, Vol 188, Num 1-4, pp 125-130, issn 0022-0248Conference Paper

TEM investigation of iron disilicide films on Si(001) grown by molecular beam epitaxyNISSEN, H.-U; MÜLLER, E; DELLER, H. R et al.Physica status solidi. A. Applied research. 1995, Vol 150, Num 1, pp 395-406, issn 0031-8965Article