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INFLUENCE OF PREPARATION CONDITIONS ON FORWARD-BIAS CURRENTS OF AMORPHOUS SILICON SCHOTTKY DIODESDENEUVILLE A; BRODSKY MH.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 3 PART. 1; PP. 1414-1421; BIBL. 16 REF.Article

INFLUENCE OF SUBSTOICHIOMETRY, HYDROGEN CONTENT AND CRYSTALLINITY ON THE OPTICAL AND ELECTRICAL PROPERTIES OF H_XWO_Y THIN FILMS.DENEUVILLE A; GERARD P.1978; J. ELECTRON. MATER.; USA; DA. 1978; VOL. 7; NO 4; PP. 559-588; BIBL. 13 REF.Article

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CAPACITANCE SPECTROSCOPY OF LOCALIZED STATES AT METAL-SEMICONDUCTOR INTERFACES. I: THEORYMURET P; DENEUVILLE A.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 9; PP. 6289-6299; BIBL. 16 REF.Article

A THIN FILM METAL BASE TRANSISTOR STRUCTURE WITH AMORPHOUS SILICONDENEUVILLE A; BRODSKY MH.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 55; NO 1; PP. 137-141; BIBL. 10 REF.Article

PRINCIPLES AND OPERATION OF AN ALL SOLID STATE ELECTROCHROMIC DISPLAY BASED ON A-"WO_3"DENEUVILLE A; GERARD P; BILLAT R et al.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 70; NO 2; PP. 203-223; BIBL. 18 REF.Article

EFFECT OF SUBSTRATE TEMPERATURE AND DEPOSITION RATE ON THE PHOTOCONDUCTIVITY OF SPUTTERED A-SI:HHAMDI H; DENEUVILLE A; BRUYERE JC et al.1980; J. PHYSIQUE, LETT.; ISSN 0302-072X; FRA; DA. 1980; VOL. 41; NO 20; PP. L483-L486; ABS. FRE; BIBL. 15 REF.Article

EFFECT OF ANNEALING ON AN AMORPHOUS GE_XTE_1-X MATRIX WITH TE CRISTALLITES.DENEUVILLE A; GERARD P; DEVENYI J et al.1976; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1976; VOL. 22; NO 1; PP. 77-88; BIBL. 18 REF.Article

LOW-TEMPERATURE OPTICAL INVESTIGATION OF THE URBACH TAIL IN AMORPHOUS GE_XTE_1- ALLOYS IN THE LIGHT OF THE ANDERSON MODEL.DENEUVILLE A; MINI A; CHAKRAVERTY BK et al.1976; PHYS. REV. LETTERS; U.S.A.; DA. 1976; VOL. 37; NO 5; PP. 295-298; BIBL. 13 REF.Article

EFFECT OF ANNEALING ON THE OPTICAL GAP OF A-SI:HDENEUVILLE A; MINI A; BRUYERE JC et al.1981; J. PHYS., C, SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 30; PP. 4531-4540; BIBL. 22 REF.Article

CHARACTERIZATION OF A "WO_3" THIN FILMS BEFORE AND AFTER COLOURATIONGERARD P; DENEUVILLE A; COURTHS R et al.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 71; NO 2; PP. 221-236; BIBL. 26 REF.Article

INFLUENCE OF HYDROGEN ON OPTICAL PROPERTIES OF A-SI:HBRUYERE JC; DENEUVILLE A; MINI A et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 4; PP. 2199-2205; BIBL. 28 REF.Article

Etude électronique et physicochimique de la structure Pt/a-Si : H/c-Si (n)Belkouch, Saïd; Deneuville, A.1989, 240 p.Thesis

Quality, doping, electronic and electrochemical applications of diamondDENEUVILLE, A; GHEERAERT, E.Le Vide (1995). 2001, Vol 56, Num 300, pp 207-208, issn 1266-0167, 37 p.Article

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DOPING EFFECTS ON POST-HYDROGENATED CHEMICAL-VAPOUR-DEPOSITED AMORPHOUS SILICONMAGARINO J; KAPLAN D; FRIEDERICH A et al.1982; PHILOSOPHICAL MAGAZINE. B. ELECTRONIC, OPTICAL AND MAGNETIC PROPERTIES; ISSN 0141-8637; GBR; DA. 1982; VOL. 45; NO 3; PP. 285-306; BIBL. 26 REF.Article

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Pour une pédagogie des tableaux de communication fondée sur la logique de l'enfant = Supported communication based on child logical reasoningDENEUVILLE, A; TSIMBA, V.Glossa (Paris). 1994, Num 42, pp 18-20, issn 0298-6477Conference Paper

CELLULES SOLAIRES: QUELQUES ASPECTS DES STRUCTURES "SCHOTTKY" A BASE DE SILICIUM AMORPHE HYDROGENE = SOLAR CELLS: SOME ASPECTS OF SCHOTTKY STRUCTURES BASED ON AMORPHOUS HYDROGENATED SILICONDENEUVILLE A; BRUYERE JC; MINI A et al.1980; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1980; VOL. 15; NO 2; PP. 233-240; ABS. ENG; BIBL. 20 REF.Article

COLOR IN "TUNGSTEN TRIOXIDE" THIN FILMS.GERARD P; DENEUVILLE A; HOLLINGER G et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 10; PP. 4252-4255; BIBL. 18 REF.Article

MATRIX CONTROLLED EQUILIBRIUM BETWEEN THE VARIOUS H SITES IN ANNEALED SPUTTERED A-SI:HDENEUVILLE A; BRUYERE JC; MINI A et al.1981; J. PHYS. C=SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 16; PP. 2279-2296; BIBL. 37 REF.Article

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