FLUORESCENT HIGH ALUMINA CERAMIC SUBSTRATESDENTAI AG.1972; AMER. CERAM. SOC. BULL.; U.S.A.; DA. 1972; VOL. 51; NO 9; PP. 681-682; BIBL. 9 REF.Serial Issue

INP/INGAAS HETEROJUNCTION PHOTOTRANSISTOR WITH INTEGRATED LIGHT EMITTING DIODECAMPBELL JC; DENTAI AG.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 2; PP. 192-193; BIBL. 8 REF.Article

POWER AND MODULATION BANDWIDTH OF GAAS-ALGAAS HIGH-RADIANCE LED'S FOR OPTICAL COMMUNICATION SYSTEMSLEE TP; DENTAI AG.1978; I.E.E.E. J. QUANTUM ELECTRON; USA; DA. 1978; VOL. 14; NO 3; PP. 150-159; BIBL. 33 REF.Article

INGAAS/INP P-I-N PHOTODIODES FOR LIGHTWAVE COMMUNICATIONS AT THE 0.95-1.65 MU M WAVELENGTHLEE TP; BURRUS CA JR; DENTAI AG et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 232-238; BIBL. 26 REF.Article

OPTICAL COMPARATOR: A NEW APPLICATION FOR AVALANCHE PHOTOTRANSISTORSCAMPBELL JC; QUA GJ; DENTAI AG et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 4; PP. 408-411; BIBL. 10 REF.Article

LARGE-AREA BACK-ILLUMINATED INGAAS/INP PHOTODIODES FOR USE AT 1 TO 1.6 MU M WAVELENGTHBURRUS CA; DENTAI AG; LEE TP et al.1981; OPT. COMMUN.; ISSN 0030-4018; NLD; DA. 1981; VOL. 38; NO 2; PP. 124-126; BIBL. 4 REF.Article

P-N-P-N OPTICAL DETECTORS AND LIGHT-EMITTING DIODESCOPELAND JA; DENTAI AG; LEE TP et al.1978; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1978; VOL. 14; NO 11; PP. 810-813; BIBL. 7 REF.Article

WAVELENGTH DIVISION MULTIPLEXING EXPERIMENT EMPLOYING DUAL-WAVELENGTH LEDS AND PHOTODETECTORSOGAWA K; LEE TP; BURBUS CA et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 22; PP. 857-859; BIBL. 10 REF.Article

1.1 GBS PSEUDORANDOM PULSE-CODE MODULATION OF 1.27 MU M WAVELENGTH C.W. INGAASP/INP D.H. LASERS.ABBOTT SM; MUSKA WM; LEE TP et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 11; PP. 349-350; BIBL. 9 REF.Article

SMALL-AREA, HIGH-RADIANCE C.W. INGAASP L.E.D.S. EMITTING AT 1.2 TO 1.3 UM.DENTAI AG; LEE TP; BURRUS CA et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 16; PP. 484-485; BIBL. 13 REF.Article

HIGH-EFFICIENCY SHORT-CAVITY INGAASP LASER WITH ONE HIGH-REFLECTIVITY MIRRORLEE TP; BURRUS CA; LIU PL et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 19; PP. 805-806; BIBL. 3 REF.Article

MEASUREMENT OF BEAM PARAMETERS OF INDEX-GUIDED AND GAIN-GUIDED SINGLE-FREQUENCY INGAASP INJECTION LASERSLEE TP; BURRUS CA; MARCUSE D et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 21; PP. 902-904; BIBL. 5 REF.Article

OPTICALLY INDUCED CATASTROPHIC DEGRADATION IN INGAASP/INP LAYERSTEMKIN H; MAHAJAN S; DIGIUSEPPE MA et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 562-565; BIBL. 17 REF.Article

WAVELENGTH-MULTIPLEXED AND GATE: A BUILDING BLOCK FOR MONOLITHIC OPTICALLY COUPLED CIRCUITSCOPELAND JA; CAMPBELL JC; DENTAI AG et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 3; PP. 197-199; BIBL. 12 REF.Article

HIGH AVALANCHE GAIN IN SMALL-AREA INP PHOTODIODESLEE TP; BURRUS CA; DENTAI AG et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 7; PP. 511-513; BIBL. 13 REF.Article

MATERIAL-DISPERSION-LIMITED OPERATION OF HIGH-BIT-RATE OPTICAL FIBRE DATA LINKS USING L.E.D.S.MUSKA WM; TINGYE LI; LEE TP et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 20; PP. 605-607; BIBL. 9 REF.Article

INP/INGAAS HETEROJUNCTION PHOTOTRANSISTORSCAMPBELL JC; DENTAI AG; BURRUS CA JR et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 264-269; BIBL. 15 REF.Article

VERY-HIGH-SPEED BACK-ILLUMINATED INGAAS/INP PIN PUNCH-THROUGH PHOTODIODESLEE TP; BURRUS CA; OGAWA K et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 12; PP. 431-432; BIBL. 4 REF.Article

HIGH SENSITIVITY INP/INGAAS HETEROJUNCTION PHOTOTRANSISTORCAMPBELL JC; DENTAI AG; BURRUS CA et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 18; PP. 713-714; BIBL. 5 REF.Article

IMPROVED TWO-WAVELENGTH DEMULTIPLEXING IN GAASP PHOTODETECTORCAMPBELL JC; DENTAI AG; LEE TP et al.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 6; PP. 601-603; BIBL. 10 REF.Article

SMALL AREA INGAAS/INP P-I-N PHOTODIODES: FABRICATION, CHARACTERISTICS AND PERFORMANCE OF DEVICES IN 274 MB/S AND 45 MB/S LIGHTWAVE RECEIVERS AT 1.31 MU M WAVELENGTHLEE TP; BURRUS CA; DENTAI AG et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 4; PP. 155-156; BIBL. 13 REF.Article

SMALL-AREA HIGH-SPEED INP/INGAAS PHOTOTRANSISTORCAMPBELL JC; BURRUS CA; DENTAI AG et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 10; PP. 820-821; BIBL. 14 REF.Article

OPTICALLY PUMPED ULTRASHORT CAVITY IN_1-XGA_XAS_YP_1-Y LASERS: PICOSECOND OPERATION BETWEEN 0.83 AND 1.59 MU MSTONE J; WIESENFELD JM; DENTAI AG et al.1981; OPT. LETT.; ISSN 0146-9592; USA; DA. 1981; VOL. 6; NO 11; PP. 534-536; BIBL. 15 REF.Article

DUAL-CHANNEL 1.5 MB/S LIGHTWAVE RECEIVER EMPLOYING AN INGAASP WAVELENGTH-DEMULTIPLEXING DETECTORLEE TP; CAMPBELL JC; OGAWA K et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 13; PP. 388-389; BIBL. 4 REF.Article

HIGH-SPEED DIGITAL LIGHTWAVE COMMUNICATION USING LED_S AND PIN PHOTODIODES AT 1.3 MU MGLOGE D; ALBANESE A; BURRUS CA et al.1980; BELL SYST. TECH. J.; ISSN 0005-8580; USA; DA. 1980; VOL. 59; NO 8; PP. 1365-1382; BIBL. 20 REF.Article