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FLUORESCENT HIGH ALUMINA CERAMIC SUBSTRATESDENTAI AG.1972; AMER. CERAM. SOC. BULL.; U.S.A.; DA. 1972; VOL. 51; NO 9; PP. 681-682; BIBL. 9 REF.Serial Issue

INP/INGAAS HETEROJUNCTION PHOTOTRANSISTOR WITH INTEGRATED LIGHT EMITTING DIODECAMPBELL JC; DENTAI AG.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 2; PP. 192-193; BIBL. 8 REF.Article

POWER AND MODULATION BANDWIDTH OF GAAS-ALGAAS HIGH-RADIANCE LED'S FOR OPTICAL COMMUNICATION SYSTEMSLEE TP; DENTAI AG.1978; I.E.E.E. J. QUANTUM ELECTRON; USA; DA. 1978; VOL. 14; NO 3; PP. 150-159; BIBL. 33 REF.Article

INGAAS/INP P-I-N PHOTODIODES FOR LIGHTWAVE COMMUNICATIONS AT THE 0.95-1.65 MU M WAVELENGTHLEE TP; BURRUS CA JR; DENTAI AG et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 232-238; BIBL. 26 REF.Article

ETCH RATES FOR TWO MATERIAL SELECTIVE ETCHES IN THE INGAASP/INP SYSTEMCONWAY KL; DENTAI AG; CAMPBELL JC et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART. 1; PP. 1836-1838; BIBL. 6 REF.Article

SHORT-ACTIVITY SINGLE-MODE 1.3 MU M INGAASP LASERS WITH EVAPORATED HIGH-REFLECTIVITY MIRRORSBURRUS CA; LEE TP; DENTAI AG et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 25-26; PP. 954-956; BIBL. 7 REF.Article

A COMPARISON OF "NORMAL" LASERS AND LASERS EXHIBITING LIGHT JUMPSCAMPBELL JC; ABBOTT SM; DENTAI AG et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 8; PP. 4010-4013; BIBL. 5 REF.Article

IN GAASP P-I-N PHOTODIODES WITH LOW DARK CURRENT AND SMALL CAPACITANCEBURRUS CA; DENTAI AG; LEE TP et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 20; PP. 655-657; BIBL. 10 REF.Article

ROOM-TEMPERATURE 1.3 MU M C.W. OPERATION OF A GLASS-CLAD ND: Y.A.G. SINGLE-CRYSTAL FIBRE LASER END PUMPED WITH A SINGLE L.E.D.BURRUS CA; STONE J; DENTAI AG et al.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 22; PP. 600-602; BIBL. 10 REF.Article

OPTICAL COMPARATOR: A NEW APPLICATION FOR AVALANCHE PHOTOTRANSISTORSCAMPBELL JC; QUA GJ; DENTAI AG et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 4; PP. 408-411; BIBL. 10 REF.Article

LARGE-AREA BACK-ILLUMINATED INGAAS/INP PHOTODIODES FOR USE AT 1 TO 1.6 MU M WAVELENGTHBURRUS CA; DENTAI AG; LEE TP et al.1981; OPT. COMMUN.; ISSN 0030-4018; NLD; DA. 1981; VOL. 38; NO 2; PP. 124-126; BIBL. 4 REF.Article

P-N-P-N OPTICAL DETECTORS AND LIGHT-EMITTING DIODESCOPELAND JA; DENTAI AG; LEE TP et al.1978; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1978; VOL. 14; NO 11; PP. 810-813; BIBL. 7 REF.Article

WAVELENGTH DIVISION MULTIPLEXING EXPERIMENT EMPLOYING DUAL-WAVELENGTH LEDS AND PHOTODETECTORSOGAWA K; LEE TP; BURBUS CA et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 22; PP. 857-859; BIBL. 10 REF.Article

1.1 GBS PSEUDORANDOM PULSE-CODE MODULATION OF 1.27 MU M WAVELENGTH C.W. INGAASP/INP D.H. LASERS.ABBOTT SM; MUSKA WM; LEE TP et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 11; PP. 349-350; BIBL. 9 REF.Article

SMALL-AREA, HIGH-RADIANCE C.W. INGAASP L.E.D.S. EMITTING AT 1.2 TO 1.3 UM.DENTAI AG; LEE TP; BURRUS CA et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 16; PP. 484-485; BIBL. 13 REF.Article

DUAL-WAVELENGTH DEMULTIPLEXING INGAASP PHOTODIODECAMPBELL JC; LEE TP; DENTAI AG et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 6; PP. 401-402; BIBL. 10 REF.Article

HIGH-EFFICIENCY SHORT-CAVITY INGAASP LASER WITH ONE HIGH-REFLECTIVITY MIRRORLEE TP; BURRUS CA; LIU PL et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 19; PP. 805-806; BIBL. 3 REF.Article

MEASUREMENT OF BEAM PARAMETERS OF INDEX-GUIDED AND GAIN-GUIDED SINGLE-FREQUENCY INGAASP INJECTION LASERSLEE TP; BURRUS CA; MARCUSE D et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 21; PP. 902-904; BIBL. 5 REF.Article

OPTICALLY INDUCED CATASTROPHIC DEGRADATION IN INGAASP/INP LAYERSTEMKIN H; MAHAJAN S; DIGIUSEPPE MA et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 562-565; BIBL. 17 REF.Article

WAVELENGTH-MULTIPLEXED AND GATE: A BUILDING BLOCK FOR MONOLITHIC OPTICALLY COUPLED CIRCUITSCOPELAND JA; CAMPBELL JC; DENTAI AG et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 3; PP. 197-199; BIBL. 12 REF.Article

HIGH AVALANCHE GAIN IN SMALL-AREA INP PHOTODIODESLEE TP; BURRUS CA; DENTAI AG et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 7; PP. 511-513; BIBL. 13 REF.Article

MATERIAL-DISPERSION-LIMITED OPERATION OF HIGH-BIT-RATE OPTICAL FIBRE DATA LINKS USING L.E.D.S.MUSKA WM; TINGYE LI; LEE TP et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 20; PP. 605-607; BIBL. 9 REF.Article

INP/INGAAS HETEROJUNCTION PHOTOTRANSISTORSCAMPBELL JC; DENTAI AG; BURRUS CA JR et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 264-269; BIBL. 15 REF.Article

VERY-HIGH-SPEED BACK-ILLUMINATED INGAAS/INP PIN PUNCH-THROUGH PHOTODIODESLEE TP; BURRUS CA; OGAWA K et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 12; PP. 431-432; BIBL. 4 REF.Article

HIGH SENSITIVITY INP/INGAAS HETEROJUNCTION PHOTOTRANSISTORCAMPBELL JC; DENTAI AG; BURRUS CA et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 18; PP. 713-714; BIBL. 5 REF.Article

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