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DEPLETION WIDTHS OF THE METAL-INSULATOR SEMICONDUCTOR (MIS) STRUCTURECHEIN WEI JEN; CHUNG LEN LEE; TAN FU LEI et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 10; PP. 949-954; BIBL. 9 REF.Article

HETEROJONCTION DANS LES CONDITIONS D'APPAUVRISSEMENT NON STATIONNAIREVLASENKO EV; SURIS RA.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 7; PP. 1353-1359; BIBL. 4 REF.Article

ON THE CONDITION OF STRONG INVERSION AND TERMINAL VOLTAGES IN MOS STRUCTURES WITH NONUNIFORM AND DEGENERATE DOPINGRITU SHRIVASTAVA; MARSHAK AH.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 6; PP. 1009-1013; BIBL. 9 REF.Article

ELECTRICAL CHARACTERISTICS OF DEPLETRIN-TYPE SOS MOS DEVICESONGA S; KO WH; HATANAKA K et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 9; PP. 1675-1682; BIBL. 12 REF.Article

ELECTRON BEAM INDUCED CURRENT STUDIES OF MS AND MIS DEVICES ON CDSRUSSELL GJ; ROBERTSON MJ; WOODS J et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 57; NO 1; PP. 253-262; ABS. GER; BIBL. 12 REF.Article

TIME DEPENDENCE OF DEPLETION REGION FORMATION IN PHOSPHORUS-DOPED SILICON MOS DEVICES AT CRYOGENIC TEMPERATURESSAKS NS; NORDBRYHN A.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 6962-6968; BIBL. 15 REF.Article

EFFECTS OF DEPLETION-LAYER MODULATION ON SPURIOUS OSCILLATIONS IN IMPATT DIODES.TANG P; HADDAD GI.1977; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1977; VOL. 25; NO 9; PP. 734-741; BIBL. 5 REF.Article

FIELD-DEPENDENT TRANSPORT THROUGH THE DEPLETION LAYER OF A SEMICONDUCTING ELECTRODETHOMCHICK J; BUONCRISTIANI AM.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 12; PP. 7296-7303; BIBL. 10 REF.Article

PRACTICAL ASPECTS OF THE DEPLETION ETCH METHOD IN HIGH-VOLTAGETEMPLE VAK.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 5; PP. 977-982; BIBL. 10 REF.Article

THEORETICAL AND EXPERIMENTAL STUDY OF BEVELED THYRISTOR STRUCTURESCOUVREUR P; VAN DE WIELE F.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 11; PP. 967-971; BIBL. 6 REF.Article

LSI AND RELATED DEVICES. I.1978; JAP. J. APPL. PHYS.; JAP.; DA. 1978; VOL. 17; SUPPL. 1; PP. 231-251; BIBL. DISSEM.; (CONF. SOLID STATE DEVICES. 9. PROC.; TOKYO; 1977)Conference Paper

THEORETICAL STUDY OF THE DEPLETION-LAYER CAPACITANCE IN ABRUPT P-N SEMICONDUCTOR JUNCTIONS.WEINHAUSEN G.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 46; NO 2; PP. 517-525; ABS. GER; BIBL. 14 REF.Article

ON THE CHARACTERISTIC OF THE DEEP-DEPLETION SOS TRANSISTOR.WORLEY ER.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 12; PP. 1342-1345; BIBL. 13 REF.Article

CHARGE INJECTION FROM A SURFACE DEPLETION REGION-THE AL2O3-SILICON SYSTEMKOLK J; HEASELL EL.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 3; PP. 223-228; BIBL. 16 REF.Article

DEPLETION-LAYER CALCULATIONS OF A DOUBLE-DIFFUSED JUNCTIONLIN HC.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 9; PP. 1839-1841; BIBL. 4 REF.Article

A SIMPLE THRESHOLD MODEL FOR DEPLETION MOSTMOESCHWITZER A.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 53; NO 1; PP. K43-K45; BIBL. 2 REF.Article

DEPLETION LAYER CHARACTERISTICS OF HETEROJUNCTIONS WITH BUILT-IN HOMOJUNCTION.NAHAR RK; NAGCHOUDHURI D.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 36; NO 1; PP. 139-145; ABS. ALLEM.; BIBL. 16 REF.Article

ON THE CONDITION OF STRONG INVERSION AND TERMINAL VOLTAGES IN MOS STRUCTURES WITH NONUNIFORM AND DEGENERATE DOPINGRITU SHRIVASTAVA; MARSHAK AH.1982; IEEE TRANS. ACOUST. SPEECH SIGNAL PROCESS.; ISSN 0096-3518; USA; DA. 1982; VOL. 29; NO 6; PP. 1009-1013; BIBL. 9 REF.Article

SURFACE DEPLETION AND INVERSION IN SEMICONDUCTORS WITH ARBITRARY DOPANT PROFILESBARTELINK DJ.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 2; PP. 220-923; BIBL. 9 REF.Article

ANOMALOUS LOW-FREQUENCY GRAIN-BOUNDARY CAPACITANCE IN SILICONSEAGER CH; PIKE GE.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 8; PP. 747-749; BIBL. 7 REF.Article

THE EFFECTS OF RADIATION DAMAGE ON THE PROPERTIES OF NI-NGAAS SCHOTTKY DIODES. III. ANNEALING STUDIES.TAYLOR PD; MORGAN DV.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 11; PP. 935-938; BIBL. 8 REF.Article

IONIZATION TRANSIENTS OF SHALLOW LEVELS IN SILICON SPACE CHARGE LAYER AT LOW TEMPERATUREROSENCHER E; MOSSER V; VINCENT G et al.1983; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1983; VOL. 45; NO 7; PP. 629-632; BIBL. 10 REF.Article

STUDIES OF CURRENT VOLTAGE CHARACTERISTICS OF ANTIMONY OXIDE FILMSDUTTA CR; BARUA K.1982; JOURNAL OF PHYSICS D: APPPLIED PHYSICS; ISSN 0022-3727; GBR; DA. 1982; VOL. 15; NO 10; PP. 2027-2034; BIBL. 14 REF.Article

THERMAL FILLING EFFECTS IN CAPACITANCE EXPERIMENTS ON DEEP LEVELS IN SEMICONDUCTORSNORAS JM; SZA WELSKA HR.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 9; PP. 2001-2009; BIBL. 23 REF.Article

A MODEL FOR THE SUBMICROMETER N-CHANNEL DEEP-DEPLETION SOS/MOSFETJERDONEK RT; BANDY WR; BIRNBAUM J et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1566-1570; BIBL. 13 REF.Article

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