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SELEKTIVGALVANISCHE ABSCHEIDUNGSVERFAHREN = PROCEDE DE DEPOT ELECTROLYTIQUE SELECTIFHACKER MS.1979; METALLOBERFLAECHE; DEU; DA. 1979; VOL. 33; NO 4; PP. 137-145Article

PRECISION CIRCUIT REPAIR WITH SELECTIVE PLATING.RUBINSTEIN M.1977; INSULAT. CIRCUITS; U.S.A.; DA. 1977; VOL. 23; NO 8; PP. 37-40Article

NOW, CONTACT PLATING TECHNOLOGY RANGES FROM FULL COATING TO MICROSPOT COVERAGE.ZACHARIAS R.1976; INSULAT. CIRCUITS; U.S.A.; DA. 1976; VOL. 22; NO 3; PP. 31-32Article

ON THE SELECTIVE PLACEMENT OF GOLD.MARKSTEIN HW.1975; ELECTRON. PACKAG. PRODUCT.; U.S.A.; DA. 1975; VOL. 15; NO 1; PP. 40-50 (6P.); BIBL. 1 REF.Article

LE POINT SUR LA GALVANOPLASTIE SELECTIVETURNER DR.1979; SURFACES; FRA; DA. 1979; VOL. 18; NO 123; PP. 46-48; BIBL. 5 REF.Article

THE TECHNIQUE OF FLUID FLOW MASKING SELECTIVE PLATINGHAYNES R; RAMACHANDRAN K; FINEBERG DJ et al.1979; INSULAT. CIRCUITS; USA; DA. 1979; VOL. 25; NO 11; PP. 39-44Article

MAKING AND REPAIRING PCBS WITH SELECTIVE ELECTROPLATING.1977; CIRCUITS MANUF.; U.S.A.; DA. 1977; VOL. 17; NO 1; PP. 68-74 (5P.)Article

THE ANATOMY OF A CONTACT: A COMPLEX METAL SYSTEM. IIWHITLEY JH.1981; INSUL., CIRCUITS; ISSN 0020-4544; USA; DA. 1981; VOL. 27; NO 12; PP. 60-64Article

THE EDGE OVERGROWTH IN SELECTIVE DEPOSITION OF GAASMIKAWA T; WADA O; TAKANASHI H et al.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 11; PP. 1756-1757; BIBL. 4 REF.Serial Issue

IN HOUSE SELECTIVE GOLD PLATING OF CONTACTS1981; INSUL., CIRCUITS; ISSN 0020-4544; USA; DA. 1981; VOL. 27; NO 12; PP. 57-59Article

SELECTIVE GOLD PLATING OF PURCHASED PRODUCTSHAIN WR; RUDLOFF LW.1978; WEST. ELECTR. ENGR; USA; DA. 1978; VOL. 22; NO 2; PP. 91-97Article

SELECTIVE GOLD PLATING1978; WEST. ELECTR. ENGR; USA; DA. 1978; VOL. 22; NO 2; PP. 1-97; BIBL. DISSEM.Serial Issue

A REPAIR FACILITY FOR PRINTED WIRING BOARD CONTACT FINGERSLANDAU U; MATHIAS WT; HAUGHT DE et al.1978; WEST. ELECTR. ENGR; USA; DA. 1978; VOL. 22; NO 2; PP. 82-90; (7 P.)Article

THE TECHNIQUE OF FLUID FLOW MASKING SELECTIVE PLATING.I: DEVELOPMENT OF THE TECHNIQUEHAYNES R; RAMACHANDRAN K; FINEBERG DJ et al.1978; WEST. ELECTR. ENGR; USA; DA. 1978; VOL. 22; NO 2; PP. 61-67Article

CONTINUOUS PLATING OF ESS CIRCUIT PACK RECEPTACLE CONNECTORS. I. A NEW APPROACH TO HIGH-SPEED SELECTIVE ELECTROPLATINGKOONTZ DE; HELGESEN GF.1978; WEST. ELECTR. ENGR; USA; DA. 1978; VOL. 22; NO 2; PP. 26-31Article

HIGH-SPEED, SELECTIVE GOLD-PLATING OF LEAD FRAMES FOR MICROELECTRONIC PACKAGING.I. PROCESS DEVELOPMENT AND EVALUATION OF PROCESS PARAMETERSREHRIG DL.1978; WEST. ELECTR. ENGR; USA; DA. 1978; VOL. 22; NO 2; PP. 48-56Article

FABRICATING NICKEL/GOLD CONNECTOR TABS USING A DRY-FILM RESIST.JOHNSON DD.1976; ELECTRON. PACKAG. PRODUCT.; U.S.A.; DA. 1976; VOL. 16; NO 5; PP. 177-181Article

Evolution dans le domaine des dépôts sélectifs = Evolution in the field of selective depositionPIZEL, G.Surfaces (Paris). 1984, Vol 23, Num 169, issn 0585-9840, 62Article

Keime mit dem Laser setzen : Laserinduzierte Mettalbscheidung auf Halbleitern und Isolatoren = Formation of nuclei by laserPAATSCH, W.Metalloberfläche. 1992, Vol 46, Num 5, pp 213-217, issn 0026-0797Article

Traitement de surface sélectif en continu. II = Selective continuous surface treatment. IIFUVELLE, C. M. A; ZWERNER, E. W.Galvano-organo (Paris). 1984, Vol 53, Num 550, pp 801-802, issn 0302-6477Article

UV-induced transformations in island films of Sn(II) hydroxides in the course of selective metal plating of dielectricsREVA, O. V; VOROB'EVA, T. N.Russian journal of applied chemistry. 1998, Vol 71, Num 3, pp 517-520, issn 1070-4272Article

Procédé de dépôt sélectif par CVD pour la micro-électronique silicium - Applications au tungstène et au disiliciure de titane = Selective deposition process by CVD for silicon microelectronicsGouy-Pailler, Philippe; Bernard, C.1994, 170 p.Thesis

Selective electroplating between metal and semiconductor electrodesLO, T.-C; CHAN, M.-Y.Journal of the Electrochemical Society. 1996, Vol 143, Num 11, pp 3517-3521, issn 0013-4651Article

Siliciuration par dépôt en phase vapeur pour les technologies CMOS avancées: TiSi2 sélectif et drain/source surélevés = Silicidation by chemical vapor deposition for advanced CMOS technologies: selective TiSi2 and elevated drain/sourceMaury, Delphine; Portal, Jean-Claude.1997, 181 p.Thesis

Selective SiGe and heavily As doped Si deposited at low temperature by atmospheric pressure chemical vapor depositionSEDGWICK, T. O; GRÜTZMACHER, D. A; ZASLAVSKY, A et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 3, pp 1124-1128, issn 1071-1023Conference Paper

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