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SOLID STATE DEVICE RESEARCH GROUP.FONSTAD CG.1974; ANNU. REP. RES. MATER. MASSACHUSETTS INST. TECHNOL.; U.S.A.; DA. 1974; PP. 103-110; BIBL. 8 REF.Article

I-V CHARACTERISTICS OF PTSI-SI CONTACTS MADE FROM CVD PLATINUM.RAND MJ.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 6; PP. 811-815; BIBL. 7 REF.Article

CHEMICAL VAPOR DEPOSITION.JACKSON D.1973; ELECTRON. PACKAG. PRODUCT.; U.S.A.; DA. 1973; VOL. 13; NO 7; PP. 36-42 (4P.)Article

ETUDE QUANTITATIVE DE LA POROSITE ET DE LA QUANTITE D'EAU CONTENUE DANS DES COUCHES MINCES DEPOSEES EN VOIE GAZEUSEYANAZAWA H; HASHIMOTO N; ASHIKAWA M et al.1974; OYO BUTURI; JAP.; DA. 1974; VOL. 43; NO 4; PP. 330-334; ABS. ANGL.; BIBL. 12 REF.Article

CHEMICAL VAPOR DEPOSITION SYSTEMS FOR GLASS PASSIVATION OF INTEGRATED CIRCUITS.KERN W.1975; SOLID STATE TECHNOL.; U.S.A.; DA. 1975; VOL. 18; NO 12; PP. 25-33; BIBL. 1 P. 1/2Article

PHYSICAL VAPOR DEPOSITION TECHNIQUES.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 4; PP. 800-864; BIBL. DISSEM.; (2ND CONF. STRUCT. PROP. RELATIONSHIPS THICK FILMS BULK COATINGS. PROC.; SAN FRANCISCO, CALIF.; 1975)Conference Paper

RECRYSTALLIZATION PROCESSES IN POLYCRYSTALLINE SILICON.OUWENS CD; HEIJLIGERS H.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 10; PP. 569-571; BIBL. 8 REF.Article

DISPOSITIF POUR L'OBTENTION DE COUCHES MINCES D'AL2O3BARYBIN AA; TOMILIN VI; KEMPEL VA et al.1975; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1975; NO 3; PP. 238-239; BIBL. 2 REF.Article

ELEKTRONOVE DELO PRE NAPAROVANEA TENKYCH VRSTIEV. = CANON A ELECTRONS POUR LE DEPOT EN VOIE GAZEUSE DE COUCHES MINCESHARMAN R; SOCHOROVA V; STUBNA I et al.1974; ELEKTROTECH. CAS.; CESKOSL.; DA. 1974; VOL. 25; NO 7; PP. 509-517; ABS. RUSSE ALLEM. ANGL.; BIBL. 6 REF.Article

THE PREPARATION AND PROPERTIES OF CVD-SILICON TUBES AND BOATS FOR SEMICONDUCTOR DEVICE TECHNOLOGY.DIETZE W; HUNT LP; SAWYER DH et al.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 8; PP. 1112-1115; BIBL. 5 REF.Article

CONTINUOUS, FLEXIBLE, AND HIGH-STRENGTH SUPERCONDUCTING NB3GE AND NB3SN FILAMENTS.AHMAD I; HEFFERNAN WJ.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 2; PP. 128; BIBL. 4 REF.Article

IRON OXIDE SEE-THROUGH PHOTOMASKSSULLIVAN MV.1973; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1973; VOL. 120; NO 4; PP. 545-550; BIBL. 6 REF.Serial Issue

EFFECTS OF ELECTRON-BEAM IRRADIATION ON THE PROPERTIES OF CVD S3N4 FILMS IN MNOS STRUCTURES. = EFFETS DE L'IRRADIATION PAR UN FAISCEAU D'ELECTRONS SUR LES PROPRIETES DE COUCHES MINCES DE SI3N4 GROSSIES PAR LA METHODE DE CROISSANCE EN PHASE VAPEUR DANS DES STRUCTURES MNOSMA TP; YUN BH; DIMARIA DJ et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 4; PP. 1599-1604; BIBL. 32 REF.Article

TRENDS IN AUTOMATED WAFER PROCESSING.MARKSTEIN HW.1975; ELECTRON. PACKAG. PRODUCT.; U.S.A.; DA. 1975; VOL. 15; NO 4; PP. 23-32 (6P.)Article

A SIMPLE LIQUID HELIUM VAPOR COOLED FIELD ION MICROSCOPE FOR THE SHIDY OF VAPOR DEPOSITIONREED DA; GRAHAM WR.1972; REV. SCI. INSTRUM.; U.S.A.; DA. 1972; VOL. 43; NO 9; PP. 1365-1367; BIBL. 11 REF.Serial Issue

AUGER ELECTRON SPECTROSCOPY OF A STABLE GERMANIUM OXIDE.WANG KL; JOSHI A.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 4; PP. 927-932; BIBL. 27 REF.Conference Paper

THE BASIC PRINCIPLES OF CHEMICAL VAPOUR DEPOSITION (CVD).VIGUIE JC.1974; IN: SCI. TECHNOL. SURF. COATING. NATO ADV. STUDY INST.; LONDON; 1972; LONDON; ACAD. PRESS; DA. 1974; PP. 149-158; BIBL. 1 REF.Conference Paper

REALISATION DE STRUCTURES EPITAXIALES FINES PAR EPITAXIE DU SILICIUM EN PHASE GAZEUSE.DUCHEMIN JP.1976; VIDE; FR.; DA. 1976; NO 183 SUPPL.; PP. 1-11; ABS. ANGL.; BIBL. 2 P. 1/2; (MATER. TECHNOL. MICROELECTR. TENDANCES ACTUELLES. COLLOQ. C.R.; MONTPELLIER; 1976)Conference Paper

IN SITU MONITORING OF FILM DEPOSITION USING HE-NE LASER SYSTEM. I. MEASUREMENTS OF CVD INSULATING FILM AT 6328 A.SUGAWARA K; YOSHIMI T; OKUYAMA H et al.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 9; PP. 1233-1235; BIBL. 9 REF.Article

VAPOUR-DEPOSITED SILICON DIOXIDE FOR DEVICE APPLICATIONS.LEUENBERGER F.1974; THIN SOLID FILMS; NETHERL.; DA. 1974; VOL. 22; NO 3; PP. 245-253; BIBL. 14 REF.Article

CHEMICAL VAPOR PHASE DEPOSITION OF GAAS AND ALGAAS.BACHEM KH; HEYEN M.1976; VIDE; FR.; DA. 1976; VOL. 183; SUPPL.; PP. 50-64; BIBL. 11 REF.; (MATER. TECHNOL. MICROELECTR. TENDANCES ACTUELLES. COLLOQ. C.R.; MONTPELLIER; 1976)Conference Paper

INP/SIO2 MIS STRUCTURE.MESSICK L.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 11; PP. 4949-4951; BIBL. 10 REF.Article

ETAT ACTUEL DE LA REALISATION DES DEPOTS DE SILICIUM EN EPITAXIE SUR SUBSTRAT DE CORINDON.TRILHE J; CHOUJAA A; DU PORT DE PONTCHARRA J et al.1976; VIDE; FR.; DA. 1976; NO 183 SUPPL.; PP. 15-17; ABS. ANGL.; (MATER. TECHNOL. MICROELECTR. TENDANCES ACTUELLES. COLLOQ. C.R.; MONTPELLIER; 1976)Conference Paper

OBTENTION DE COUCHES DE CARBURE DE SILICIUM; ETUDE DE LEURS PROPRIETESVLASENKO NA; VOSHCHINKIN VV.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 8; PP. 98-109; BIBL. 31 REF.Serial Issue

OH-ION DISTRIBUTION PROFILES IN ROD PREFORMS OF HIGH-SILICA OPTICAL WAVEGUIDE.KAWACHI M; HORIGUCHI M; KAWANA A et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 9; PP. 247-248; BIBL. 3 REF.Article

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