Directions alternées d'ordre élevé en réaction-diffusion = Alternate directions of high order applied to reaction-diffusionDESCOMBES, S; SCHATZMAN, M.Comptes rendus de l'Académie des sciences. Série 1, Mathématique. 1995, Vol 321, Num 11, pp 1521-1524, issn 0764-4442Article

Existence globale et régularité de solutions d'équations de Ginzburg-Landau complexes = Global existence and regularity of solutions for complex Ginzburg-Landau equationsDESCOMBES, S; MOUSSAOUI, M.Comptes rendus de l'Académie des sciences. Série 1, Mathématique. 1999, Vol 329, Num 3, pp 189-192, issn 0764-4442Article

Examples of the influence of the geometry on the propagation of progressive wavesDRONNE, M. A; DESCOMBES, S; GRENIER, E et al.Mathematical and computer modelling. 2009, Vol 49, Num 11-12, pp 2138-2144, issn 0895-7177, 7 p.Conference Paper

On the well-posedness for the euler-korteweg model in several space dimensionsBENZONI-GAVAGE, S; DANCHIN, R; DESCOMBES, S et al.Indiana University mathematics journal. 2007, Vol 56, Num 4, pp 1499-1579, issn 0022-2518, 81 p.Article

Évaluation médico-économique de l'unité neurovasculaire du centre hospitalier de Pontoise = Medico-economic assessment of the Pontoise Hospital stroke unitYEKHLEF, F; DECUP, D; NICLOT, P et al.Revue neurologique (Paris). 2010, Vol 166, Num 11, pp 901-908, issn 0035-3787, 8 p.Article

An integro-differential formulation for magnetic induction in bounded domains: boundary element-finite volume methodISKAKOV, A. B; DESCOMBES, S; DORMY, E et al.Journal of computational physics (Print). 2004, Vol 197, Num 2, pp 540-554, issn 0021-9991, 15 p.Article

Highly-performant 38nm SON (silicon-on-nothing) P-MOSFETs with 9nm-thick channelsMONFRAY, S; SKOTNICKI, T; HAOND, M et al.IEEE International SOI conference. 2002, pp 20-22, isbn 0-7803-7439-8, 3 p.Conference Paper

Optimized nickel silicide process formation for high performance sub-65nm CMOS nodesFROMENT, B; CARRON, V; MORAND, Y et al.Proceedings - Electrochemical Society. 2004, pp 191-201, issn 0161-6374, isbn 1-56677-406-3, 11 p.Conference Paper

SON (Silicon-On-Nothing) technological CMOS platform : Highly performant devices and SRAM cellsMONFRAY, S; CHANEMOUGAME, D; DESCOMBES, S et al.International Electron Devices Meeting. 2004, pp 635-638, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

ABT-431, a D1 receptor agonist prodrug, has efficacy in Parkinson's DiseaseRASCOL, O; BLIN, O; CARTER, J. H et al.Annals of neurology. 1999, Vol 45, Num 6, pp 736-741, issn 0364-5134Article

Splitting methods with complex times for parabolic equationsCASTELLA, F; CHARTIER, P; DESCOMBES, S et al.BIT (Nordisk Tidskrift for Informationsbehandling). 2009, Vol 49, Num 3, pp 487-508, issn 0006-3835, 22 p.Article

Characterization of CMOS sub-65 nm metallic contact by laser scattering : Thermal stability of Ni(Si_1-xGe_x)ARRAZAT, B; DANEL, A; CAMPIDELLI, Y et al.Microelectronic engineering. 2007, Vol 84, Num 11, pp 2558-2562, issn 0167-9317, 5 p.Conference Paper

Work function tuning through dopant scanning and related effects in Ni fully silicided gate for sub-45nm nodes CMOSAIME, D; FROMENT, B; LAVIRON, C et al.International Electron Devices Meeting. 2004, pp 87-90, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

High performance 40nm nMOSFETs with HfO₂ gate dielectric and polysilicon damascene gateTAVEL, B; GARROS, X; LEVERD, F et al.IEDm : international electron devices meeting. 2002, pp 429-432, isbn 0-7803-7462-2, 4 p.Conference Paper

50nm: Gate all around (GAA): Silicon on nothing (SON): Devices: A simple way to co-integration of GAA transistors within bulk MOSFET processMONFRAY, S; SKOTNICKI, T; HAOND, M et al.Symposium on VLSI technology. 2002, pp 108-109, isbn 0-7803-7312-X, 2 p.Conference Paper

SON (Silicon-On-Nothing) P-MOSFETs with totally silicided (CoSi₂) polysilicon on 5nm-thick Si-films: The simplest way to integration of metal gates on thin FD channelsMONFRAY, S; SKOTNICKI, T; LEVERD, F et al.IEDm : international electron devices meeting. 2002, pp 263-266, isbn 0-7803-7462-2, 4 p.Conference Paper

Dual-release formulation, a novel principle in L-dopa treatment of Parkinson's diseaseDESCOMBES, S; BONNET, A. M; GASSER, U. E et al.Neurology. 2001, Vol 56, Num 9, pp 1239-1242, issn 0028-3878Article