TWO-JOSEPHSON-JUNCTION INTERFEROMETER MEMORY CELL FOR N.D.R.O.BEHA H.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 20; PP. 596-598; BIBL. 4 REF.Article

DENSE, INTERCHANGEABLE ROMS WORK WITH FAST MICROPROCESSORS.GREENE R.1978; ELECTRONICS; USA; DA. 1978; VOL. 51; NO 7; PP. 104-107Article

CELL LAYOUT BOOSTS SPEED OF LOW-POWER 64-K ROM.WILSON DR.1978; ELECTRONICS; USA; DA. 1978; VOL. 51; NO 7; PP. 96-99Article

V-MOS CONFIGURATION PACKS 64 KILOBITS INTO 175-MIL2 CHIP.HOLDT T; YU R.1978; ELECTRONICS; USA; DA. 1978; VOL. 51; NO 7; PP. 99-104Article

SOME STUDIES ON FAST SWITCHING IN TOROIDAL MEMORY CORE.DUTTA MAJUMDER D; DAS J.1977; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1977; VOL. 23; NO 8; PP. 511-515; BIBL. 8 REF.Article

FUNDAMENTAL CRITERIA FOR THE DESIGN OF HIGH-PERFORMANCE JOSEPHSON NONDESTRUCTIVE READOUT RANDOM ACCESS MEMORY CELLS AND EXPERIMENTAL CONFIRMATIONHENKELS WH.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 12; PP. 8143-8168; BIBL. 36 REF.Article

EAROM: NON-VOLATILE DATA STORAGESIRAIH A.1978; ELECTRON. ENGNG; GBR; DA. 1978; VOL. 50; NO 609; PP. 61-62Article

ELECTRICALLY ERASABLE AND REPROGRAMMABLE READ-ONLY MEMORY USING THE N-CHANNEL SIMOS ONE TRANSISTOR CELL.ROSSLER B.1977; I.E.E.E. TRANS-ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 5; PP. 606-610; BIBL. 7 REF.Article

MEMORY INTERFACE FOR THE 2650 MICROPROCESSOR.SCHUTTE H.1977; EUROMICRO NEWSLETTER; NETHERL.; DA. 1977; VOL. 3; NO 3; PP. 68-76Article

A ROM-CONTROLLED THYRISTOR TRIGGER CIRCUITCERNUSHI FRIAS B.1980; PROC. I.E.E.E.; USA; DA. 1980; VOL. 68; NO 3; PP. 413-414; BIBL. 3 REF.Article

A NOVEL MOS PROM USING A HIGHLY RESISTIVE POLY-SI RESISTORTANIMOTO M; MUROTA J; OHMORI Y et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 3; PP. 517-520; BIBL. 7 REF.Article

THE ORGANIZATION OF MICROPROGRAM STORESDAS GUPTA S.1979; COMPUTG SURV.; USA; DA. 1979; VOL. 11; NO 1; PP. 39-65; BIBL. 3 P.Article

EQUIPEMENTS ELECTRONIQUES ACTUELS. III. MEMOIRES INTEGREES ETAT SOLIDEHAINZMANN J.1977; MERES ES AUTOMAT.; MAGYAR.; DA. 1977; VOL. 25; NO 8; PP. 303-307; ABS. RUSSE ALLEM. ANGL.; BIBL. 11 REF.Article

An inductively coupled single-flux quantum NDRO memory cellKOJIMA, K; NOGUCHI; HAMANAKA, K et al.IEEE electron device letters. 1983, Vol 4, Num 8, pp 264-266, issn 0741-3106Article

Josephson NDRO memory cell with a direct-coupled sense gateENPUKY, K; SUEOKA, K; YOSHIDA, K et al.Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E. 1984, Vol 67, Num 6, pp 331-332, issn 0387-236XArticle

A novel non-destructible readout molecular memoryYONGCHAO LIANG; DVORNIKOV, Alexander S; RENTZEPIS, Peter M et al.Optics communications. 2003, Vol 223, Num 1-3, pp 61-66, issn 0030-4018, 6 p.Article

Miniaturized vortex transitional Josephson memory cell by a vertically integrated device structureNAGASAWA, S; TAHARA, S; NUMATA, H et al.IEEE transactions on applied superconductivity. 1994, Vol 4, Num 1, pp 19-24, issn 1051-8223Article

Organic materials for reversible optical data storageFERINGA, B. L; JAGER, W. F; DE LANGE, B et al.Tetrahedron (Oxford. Print). 1993, Vol 49, Num 37, pp 8267-8310, issn 0040-4020Article

Charge-injection imaging: Operating techniques and performances characteristicsBURKE, Hubert K; MICHON, Gerald J.SPIE milestone series. 2003, Vol 177, pp 36-43, issn 1050-0529, 8 p.Article

Perturbations to the Stoner-Wohlfarth threshold in 2×20 μm M-R memory elements = Perturbations du seuil de Stoner-Wohlfarth dans des éléments de mémoire magnétorésistifs de 2×20 μmCOMSTOCK, C. S; YOO, H. Y; POHM, A. V et al.Journal of applied physics. 1988, Vol 63, Num 8, pp 4321-4323, issn 0021-8979, 2BConference Paper

Characterization of (Y,Yb)MnO₃/Y₂O₃/Si prepared from alkoxide solutionsSUZUKI, Kazuyuki; TANAKA, Kiyotaka; DESHENG FU et al.Ferroelectrics (Print). 2005, Vol 329, pp 107-111, issn 0015-0193, 5 p.Conference Paper