au.\*:("DIETZE WT")
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THE GROWTH OF MAGNESIUM-DOPED GAAS BY THE OM-VPE PROCESSLEWIS CR; DIETZE WT; LUDOWISE MJ et al.1983; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1983; VOL. 12; NO 3; PP. 507-524; BIBL. 22 REF.Article
GA080 IN020AS 1.20-EV HIGH QUANTUM EFFICIENCY JUNCTION FOR MULTIJUNCTION SOLAR CELLSDIETZE WT; LUDOWISE MJ; GREGORY PE et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 10; PP. 984-986; BIBL. 10 REF.Article
OM-VPE GROWTH OF MG-DOPED GAASLEWIS CR; DIETZE WT; LUDOWISE MJ et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 3; PP. 569-570; BIBL. 5 REF.Article
IMPROVED MOBILITY IN OM-VPE-GROWN GA1-XINXASDIETZE WT; LUDOWISE MJ; COOPER CB et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 19; PP. 698-699; BIBL. 11 REF.Article
HIGH-EFFICIENCY ORGANOMETALLIC VAPOR PHASE EPITAXY ALGAAS/GAAS MONOLITHIC CASCADE SOLAR CELL USING METAL INTERCONNECTSLUDOWISE MJ; LARUE RA; BORDEN PG et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 6; PP. 550-552; BIBL. 11 REF.Article
STIMULATED EMISSION IN STRAINED GAAS1-XPX-GAAS1-YPY SUPERLATTICESLUDOWISE MJ; DIETZE WT; LEWIS CR et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 257-259; BIBL. 11 REF.Article
ABSORPTION MEASUREMENTS AT HIGH PRESSURE (0-10 KBAR) ON STRAINED SUPERLATTICESGAVRILOVIC P; MEEHAN K; HOLONYAK N JR et al.1983; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1983; VOL. 45; NO 9; PP. 803-806; BIBL. 12 REF.Article