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SUR LA MESURE DE LA DIFFERENCE DE POTENTIEL DE CONTACTVETROV AP.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 7; PP. 102-105; BIBL. 6 REF.Serial Issue

C.P.D. MEASUREMENTS ON OXIDIZED SILICON SURFACESSULI A; MICHAILOVITS L.1972; ACTA PHYS. CHEM.; HONGR.; DA. 1972; VOL. 18; NO 1-2; PP. 27-37; ABS. RUSSE; BIBL. 9 REF.Serial Issue

CONTACT POTENTIAL DIFFERENCES IN A CHAIN OF METAL AND PLASMA CONDUCTORS.GRABOWSKI R.1974; REV. SCI. TECH. C.E.C.L.E.S./C.E.R.S.; FR.; DA. 1974; VOL. 6; NO 2; PP. 169-175; ABS. FR.; BIBL. 9 REF.Article

CONTACT POTENTIAL DIFFERENCES FOR III-V COMPOUND SURFACES.VAN LAAR J; HUIJSER A.1976; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1976; VOL. 13; NO 4; PP. 769-772; BIBL. 15 REF.; (PHYS. COMPD. SEMICOND. INTERFACES. ANNU. CONF. 3. PROC.; SAN DIEGO, CALIF.; 1976)Conference Paper

CHARGE TRANSFER FROM METAL TO DIELECTRIC BY CONTACT POTENTIAL.GARTON CG.1974; J. PHYS. D; G.B.; DA. 1974; VOL. 7; NO 13; PP. 1814-1823; BIBL. 12 REF.Article

CONTACT POTENTIAL MEASUREMENTS ON THIN SIO2 FILMS.BESS M; OSWALD R; OHRING M et al.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 8; PP. 813-817; BIBL. 12 REF.Article

ADSORPTION SIMULTANEE DE L'OXYGENE ET DU CESIUM SUR LA FACE (110) DU MOLYBDENEZYKOV BM; TSKHAKAYA VK.1979; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1979; VOL. 49; NO 8; PP. 1700-1707; BIBL. 17 REF.Article

Electronic properties of the 2D-hole accumulation layer on hydrogen terminated diamondNEBEL, C. E; REZEK, B; ZRENNER, A et al.Diamond and related materials. 2004, Vol 13, Num 11-12, pp 2031-2036, issn 0925-9635, 6 p.Conference Paper

In situ work function measurements in evaporated amorphous siliconUKAH, C. I; KRUZELECKY, R. V; RACANSKY, D et al.Journal of non-crystalline solids. 1988, Vol 103, Num 1, pp 131-136, issn 0022-3093Article

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