GETTERINGOF GOLD AND COPPER IN SILICON DURING GALLIUM DIFFUSION.MOMMA N; TANIGUCHI H; URA M et al.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 6; PP. 963-968; BIBL. 17 REF.Article

DEEP PLANAR GALLIUM AND ALUMINIUM DIFFUSION IN SILICONJAYANT BALIGA B.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 2; PP. 292-296; BIBL. 15 REF.Article

DIFFUSION OF GA INTO SI THROUGH SIO₂.JAIN GC; PRASAD A; CHAKRAVARTY BC et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 46; NO 2; PP. K151-K155; BIBL. 14 REF.Article

A DEFECT MODEL FOR UNDOPED AND TELLURIUM DOPED GALLIUM ARSENIDEFEWSTER PF.1981; J. PHYS. CHEM. SOLIDS; ISSN 0022-3697; USA; DA. 1981; VOL. 42; NO 10; PP. 883-889; BIBL. 23 REF.Article

EFFECT OF INTERFACIAL STRESS AT THE SI/SIO₂ INTERFACE ON THE DIFFUSION OF GA IN SI THROUGH SIO₂JAIN GC; CHAKRAVARTY BC; PRASAD A et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 64; NO 2; PP. 485-491; ABS. GER; BIBL. 13 REF.Article

CHANNELING INVESTIGATION OF THE DIFFUSION BEHAVIOUR OF GA ATOMS IMPLANTED INTO HEAVILY DOMAGED SILICONFIDERKIEWICZ A; GOLANSKI A; KRYNICKI J et al.1978; NUKLEONIKA; POL; DA. 1978; VOL. 23; NO 10; PP. 985-990; ABS. POL/RUS; BIBL. 7 REF.Article

DIFFUSION OF GALLIUM IN SILICONHARIDOSS S; BENIERE F; GAUNEAU M et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 11; PP. 5833-5837; BIBL. 21 REF.Article

CONTROLLED GALLIUM DIFFUSION IN SILICON BY AN OPEN-TUBE SYSTEM = DIFFUSION DU GALLIUM DANS LE SILICIUM CONTROLEE PAR UN SYSTEME EN TUBE OUVERTGHOSHTAGORE RN.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 10; PP. 877-885; BIBL. 24 REF.Article

ION PROBE TECHNIQUE FOR THE STUDY OF GALLIUM DIFFUSION IN SILICON NITRIDE FILMS.LODDING A; LUNDKVIST L.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 25; NO 2; PP. 491-500; BIBL. 13 REF.Article

DIFFUSION OF GALLIUM INTO CADMIUM SULPHIDEJONES ED; MYKURA H.1980; J. PHYS. CHEM. SOLIDS; ISSN 0022-3697; USA; DA. 1980; VOL. 41; NO 11; PP. 1261-1265; BIBL. 11 REF.Article

THERMOMIGRATION OF MOLTEN GA IN SI AND GAAS.CLINE HE; ANTHONY TR.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 6; PP. 2196-2201; BIBL. 88 REF.Article

AUTODIFFUSION IN GALLIUMDZHANDZHGAVA SH SH; SIDOKHIN EF; UTENKOVA OV et al.1982; METALLOFIZIKA (KIEV); ISSN 0368-9662; UKR; DA. 1982; VOL. 4; NO 2; PP. 118-120; BIBL. 5 REF.Article

CINETIQUE DE LA MIGRATION ATOMIQUE DANS LES COMPOSES SEMICONDUCTEURS A₃B₅. AUTODIFFUSIONVOROB'EV VM; MURAV'EV VA; PANTELEEV VA et al.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 4; PP. 1125-1128; BIBL. 13 REF.Article

ELECTROMIGRATION OF LIQUID GALLIUM INCLUSIONS IN SILICONANTHONY TR.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 12; PP. 6348-6355; BIBL. 16 REF.Article

DIFFUSION OF GALLIUM THROUGH SILICON DIOXIDE FILMS INTO SILICON.WAGNER S; POVILONIS EI.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 11; PP. 1487-1496; BIBL. 47 REF.Article

OUTMIGRATION OF GALLIUM FROM AU-GAAS INTERFACES.MADAMS CJ; MORGAN DV; HOWES MJ et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 24; PP. 574-575; BIBL. 6 REF.Article

SELF- AND IMPURITY DIFFUSION IN GE AND SI.SHAW D.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 72; NO 1; PP. 11-39; BIBL. 1 P. 1/2Article

PARAMETRES ELLIPSOMETRIQUES D'UN FERRITE-GRENAT D'YTTRIUM DOPE PAR LES IONS NON MAGNETIQUES GA³⁺ ET AL³⁺ODARICH VA; RUBAN VA; ATAMANENKO BA et al.1981; OPT. SPEKTROSK.; ISSN 0030-4034; SUN; DA. 1981; VOL. 50; NO 5; PP. 900-905; BIBL. 9 REF.Article

INFLUENCE D'UN ULTRASON SUR LA DIFFUSION D'ATOMES D'IMPURETES ET LA STRUCTURE DES DISLOCATIONS DES MONOCRISTAUX DE GERMANIUMGRABCHAK VP; KULEMIN AV.1976; AKUST. ZH.; S.S.S.R.; DA. 1976; VOL. 22; NO 6; PP. 838-844; BIBL. 17 REF.Article

ERMITTLUNG VON DIFFUSIONSPROFILEN UND DIFFUSIONSKOEFFIZIENTEN IN ZNSIP₂. = DETERMINATION DE PROFILS DE CONCENTRATION ET DE COEFFICIENTS DE DIFFUSION DANS ZNSIP₂ZIEGLER E; KUHNEL G; COBET U et al.1976; EXPER. TECH. PHYS.; DTSCH.; DA. 1976; VOL. 24; NO 3; PP. 249-254; ABS. ANGL.; BIBL. 7 REF.Article

ATOMIC MODULATION OF INTERDIFFUSION AT AU-GAAS INTERFACES = MODULATION ATOMIQUE DE L'INTERDIFFUSION AUX INTERFACES AU-GAASBRILLSON LJ; MARGARITONDO G; STOFFEL NG et al.1980; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1980; VOL. 44; NO 10; PP. 667-670; BIBL. 12 REF.Article

THE DIFFUSION OF NICKEL AND GALLIUM IN THE INTERMETALLIC COMPOUND NIGADONALDSON AT; RAWLINGS RD.1976; ACTA METALLURG.; E.U.; DA. 1976; VOL. 24; NO 4; PP. 285-291; ABS. FR. ALLEM.; BIBL. 27 REF.Article

THE ELECTROMIGRATION OF LIQUID METAL INCLUSIONS IN SIANTHONY TR.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 12; PP. 6356-6365; BIBL. 34 REF.Article

IMPURITY DIFFUSIONS OF FOURTH PERIOD SOLUTES (FE, CO, NI, CU ET GA) AND HOMOVALENT SOLUTES (IN AND TL) INTO MOLTEN ALUMINUMEJIMA T; YAMAMURA T; UCHIDA N et al.1980; NIPPON KINZOKU GAKKAISHI (1952); ISSN 0021-4876; JPN; DA. 1980; VOL. 44; NO 3; PP. 316-323; ABS. ENG; BIBL. 29 REF.Article

ETUDE DE L'INFLUENCE DE LA MIGRATION DES CATIONS SUR LES PROPRIETES MAGNETIQUES ET MAGNETOOPTIQUES DES GRENATS FERRIMAGNETIQUES MONOCRISTALLINS (Y, EU)₃(FE, GA)O₁₂: APPLICATION AU RECUIT PAR LASER DES MATERIAUX A BULLES MAGNETIQUES = STUDY OF THE EFFECT OF CATION MIGRATION ON MAGNETIC AND MAGNETO-OPTICAL PROPERTIES OF MONOCRYSTALLINE FERRIMAGNETIC GARNETS (Y, EU)₃(FE, GA)O₁₂: APPLICATION TO LASER ANNEALING OF MAGNETIC BUBBLE MATERIALSDADOUN GABRIEL.1980; ; FRA; DA. 1980; 140 P.; 30 CM; BIBL. DISSEM.; TH. 3E CYCLE: SCI. MATER./PARIS 7/1980Thesis