ANOMALOUS DIFFUSION OF B AND P IN SI DIRECTLY MARKED WITH SI₃N₄MIZUO S; HIGUCHI H.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 2; PART. 1; PP. 281-286; BIBL. 11 REF.Article

DIFFUSION DU PHOSPHORE DANS LE SILICIUM A PARTIR D'UNE COUCHE IMPLANTEE PAR DES IONS AUX DOSES DE DOPAGE ELEVEESGERASIMENKO NN; ROMANOV SI; STAS VF et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 11; PP. 2117-2120; BIBL. 12 REF.Article

STUDIES OF THE PUSH-OUT EFFECT IN SILICON. II. THE EFFECT OF PHOSPHORUS EMITTER DIFFUSION ON GALLIUM-BASE PROFILES, DETERMINED BY RADIO-TRACER TECHNIQUES.JONES CL; WILLOUGHBY AFW.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 10; PP. 1531-1538; BIBL. 40 REF.Article

INFLUENCE DES PROCESSUS DE FORMATION DES PHASES SUR LES PARTICULARITES DE LA DIFFUSION DU PHOSPHORE DANS LE SILICIUMPROKHOROV VI; SOKOLOV VI; SOROKIN LM et al.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 5; PP. 1302-1307; BIBL. 16 REF.Article

A QUANTITATIVE MODEL FOR THE DIFFUSION OF PHOSPHORUS IN SILICON AND THE EMITTER DIP EFFECT.FAIR RB; TSAI JCC.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 6; PP. 995-1000; BIBL. 19 REF.Article

DETERMINATION OF THE DIFFUSION LAYER AND THE DISTRIBUTION OF THE RADIOPHOSPHORUS CONCENTRATION NEAR THE INTERFACE DURING CRYSTALLIZATION OF THE SULFUR-PHOSPHORUS-32 SYSTEM.POCZYNAJLO A.1975; NUKLEONIKA; POLSKA; DA. 1975; VOL. 20; NO 11-12; PP. 999-1008; ABS. POL. RUSSE; BIBL. 21 REF.Article

INFLUENCE OF THE NONEQUILIBRIUM VACANCIES ON THE DIFFUSION OF PHOSPHORUS INTO SILICONMATHIOT D; PFISTER JC.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 4; PP. 3053-3058; BIBL. 11 REF.Article

DETERMINATION OF DIFFUSION, PARTITION AND STICKING COEFFICIENTS FOR BORON PHOSPHORUS AND ANTIMONY IN SILICON.BENNETT RJ; PARISH C.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 10; PP. 833-838; BIBL. 9 REF.Article

DIFFUSION OF SUBSTITUTIONAL IMPURITIES IN SILICON AT SHORT OXIDATION TIMES: AN INSIGHT INTO POINT DEFECT KINETICSANTONIADIS DA; MOSKOWITZ I.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 6788-6796; BIBL. 31 REF.Article

USE OF HEAVY DOPING EFFECTS TO CALCULATE THE ELECTROSTATIC FIELD ACTING ON THE IMPURITY ATOMS.JAIN RK.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 2; PP. 946-948; BIBL. 10 REF.Article

OXIDATION-RATE DEPENDENCE OF PHOSPHORUS DIFFUSIVITY IN SILICON.MASETTI G; SOLMI S; SONCINI G et al.1976; PHILOS. MAG.; G.B.; DA. 1976; VOL. 33; NO 4; PP. 613-621; BIBL. 13 REF.Article

HIGH-TEMPERATURE DIFFUSION OF PHOSPHORUS AND BORON IN SILICON VIA VACANCIES OR VIA SELF-INTERSTITIALS.GOESELE U; STRUNK H.1979; APPL. PHYS.; ISSN 0340-3793; DEU; DA. 1979; VOL. 20; NO 4; PP. 265-273; BIBL. 65 REF.Article

DIFFUSION DU PHOSPHORE ET DU BORE DANS LE SILICIUM A PARTIR DE COUCHES ENTERREES OBTENUES PAR IMPLANTATION.LECROSNIER D; EVRARD D; FLOCH J et al.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 133-140; BIBL. 8 REF.; (APPL. PROCESSUS ELECTRON. IONIQUES. IVE. CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper

EFFET DE L'ORIENTATION DES DISLOCATIONS SUR LA DIFFUSION DANS LE SILICIUMPANTELEEV VA; BARYSHEV RS; LAJNER LV et al.1974; FIZ.-TEKH. POLUPROVODN.; S.S.S.R.; DA. 1974; VOL. 8; NO 8; PP. (1525-1527; BIBL. 11 REF.Article

THE OXIDATION RATE DEPENDENCE OF OXIDATION-ENHANCED DIFFUSION OF BORON AND PHOSPHORUS IN SILICONMIIN RON LIN A; ANTONIADIS DA; DUTTON RW et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 5; PP. 1131-1137; BIBL. 21 REF.Article

INFLUENCE DE L'OXYGENE SUR LA DIFFUSION DU PHOSPHORE DANS LE SILICIUM STIMULEE PAR IRRADIATIONBORISENKO VE; BUJKO LD; LABUNOV VA et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 1; PP. 3-7; BIBL. 22 REF.Article

OXIDATION ENHANCED DIFFUSION OF BORON AND PHOSPHORUS IN (100) SILICONTANIGUCHI K; KUROSAWA K; KASHIWAGI M et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 10; PP. 2243-2248; BIBL. 19 REF.Article

EFFECTS OF DIFFUSION-INDUCED STRAIN AND DISLOCATION ON PHOSPHOROUS DIFFUSION INTO SILICONMATSUMOTO S; AKAO Y; KOHIYAMA K et al.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 11; PP. 1840-1845; BIBL. 26 REF.Article

STUDY OF THE ENHANCED SOLUBILITY AND LATTICE LOCATION OF GOLD IMPURITIES IN A HEAVILY PHOSPHORUS-DIFFUSED LAYER OF SILICON.CHOU SL; GIBBONS JF.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 3; PP. 1197-1203; BIBL. 32 REF.Article

CONTRIBUTION A L'ETUDE DES MECANISMES DE DIFFUSION DU PHOSPHORE DANS LE SILICIUM.CHAMBERT G.1974; RAPP. C.E.A.; FR.; DA. 1974; NO 4556; PP. 1-75; ABS. ANGL.; BIBL. 2 P. 1/2; (THESE DOCT. SPEC. 3E CYCLE PHYS.; UNIV. SCI. MED. GRENOBLE)Thesis

HIGH-TEMPERATURE SCANNING CW LASER-INDUCED DIFFUSION OF ARSENIC AND PHOSPHORUS IN SILICONMATSUMOTO S; GIBBONS JF; DELINE V et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 9; PP. 821-824; BIBL. 20 REF.Article

UPHILL DIFFUSION MECHANISM IN PROTON-IRRADIATED SILICONMORIKANA Y; YAMAMOTO K; NAGAMI K et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 12; PP. 997-999; BIBL. 16 REF.Article

ETCHING CHARACTERISTICS OF PHOSPHORUS CONTAINING POLYCRYSTALLINE SILICON IN A CF₄ PLASMA.JINNO K; KINOSHITA H; MATSUMOTO Y et al.1978; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1978; VOL. 125; NO 5; PP. 827-828; BIBL. 10 REF.Article

AN EXPERIMENTAL STUDY OF VARIOUS CROSS SHEET RESISTOR TEST STRUCTURES.BUEHLER MG; THURBER WR.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 4; PP. 645-650; BIBL. 7 REF.Article

CREATION DE LACUNES EN EXCES LORS DE LA DIFFUSION DU PHOSPHORE DANS LE SILICIUMMATSUMOTO S; NIIMI T.1977; OYO BUTURI; JAP.; DA. 1977; VOL. 46; NO 5; PP. 546-549; BIBL. 12 REF.Article