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Results 1 to 25 of 4658

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THEORY OF THE FLICKER NOISE IN HOMOGENEOUS NONDEGENERATE SEMICONDUCTORS WITH SINGLE-LEVEL SRH RECOMBINATION CENTERSMIN HS.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 3; PP. 1637-1649; BIBL. 24 REF.Article

RESISTANCE ELECTRIQUE NON LINEAIRE LORS DE LA DIFFUSION PAR LES IMPURETES PARAMAGNETIQUES DANS LES METAUXIVANCHENKO YU M; TRUSH GI.1976; FIZ. TVERD. TELA; S.S.S.R.; DA. 1976; VOL. 18; NO 5; PP. 1333-1341; BIBL. 8 REF.Article

ASYMMETRIC SCATTERING OF ELECTRONS IN METALS.HURD CM.1975; CONTEMPOR. PHYS.; G.B.; DA. 1975; VOL. 16; NO 6; PP. 517-532; BIBL. 19 REF.Article

DEPENDENCE OF ELECTRONIC TUNNELLING PROBABILITY ON IMPURITY DIFFUSION LENGTH IN TUNNEL DIODES.GEORGE PJ.1974; INDIAN J. PHYS.; INDIA; DA. 1974; VOL. 48; NO 6; PP. 561-563; BIBL. 8 REF.Article

THE EFFECT OF LATERAL CARRIER DIFFUSION ON THE MODULATION RESPONSE OF A SEMICONDUCTOR LASERWILT D; LAU KY; YARIV A et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 4970-4974; BIBL. 6 REF.Article

DIFFUSION EQUATION FOR HOT ELECTRONS.NAG BR.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 8; PP. 3031-3036; BIBL. 23 REF.Article

EFFECT OF MOBILE CARRIER DIFFUSION AND ITS TREATMENT IN SIMULATION PROGRAMS FOR P-I-N SWITCHES AND LIMITERS.ROSE FWG.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 7; PP. 761-762; BIBL. 4 REF.Article

DETERMINATION DES PARAMETRES DE RECOMBINAISON DES SEMICONDUCTEURS A PARTIR DES SPECTRES D'EXCITATION DE LA PHOTOLUMINESCENCEPEKA GP; SPEKTOR SA; SHEPEL LG et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 10; PP. 1920-1924; BIBL. 9 REF.Article

A SIMPLE APPROXIMATE METHOD OF ESTIMATING THE EFFECT OF CARRIER DIFFUSION IN IMPATT DIODES.MADHU SUDAN GUPTA.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 4; PP. 327-330; BIBL. 6 REF.Article

EFFECT OF ELECTRON-ELECTRON COLLISIONS ON THE ENERGY DISTRIBUTION OF EXCESS QUASIPARTICLES IN SUPERCONDUCTORSELESIN VF.1981; ZH. EKSP. TEOR. FIZ.; SUN; DA. 1981-01; VOL. 80; NO 1; PP. 293-297; BIBL. 9 REF.Article

ELECTRON TRANSFER FROM EU2+ TO EU3+.MULAK J; STEVENS KWH.1975; Z. PHYS. B; DTSCH.; DA. 1975; VOL. 20; NO 1; PP. 21-31; BIBL. 21 REF.Article

HIGH-FIELD DIFFUSION OF ELECTRONS IN SILICON.CANALI C; JACOBONI C; OTTAVIANI G et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 5; PP. 278-280; BIBL. 13 REF.Article

CONSISTENT THEORY OF ELECTRON SCATTERING WITH ATOMS IN ELECTRON MICROSCOPES.KANAYA K; ONO S.1976; J. PHYS. D; G.B.; DA. 1976; VOL. 9; NO 2; PP. 161-174; BIBL. 43 REF.Article

PARALLEL DIFFUSION CONSTANT OF HOT ELECTRONS IN SILICON.NAG BR.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 9; PP. 550-551; BIBL. 12 REF.Article

FRICTION PARAMETER IN AN ANDERSON MODEL.SCHAICH WL.1974; PHYS. LETTERS, A; NETHERL.; DA. 1974; VOL. 50; NO 2; PP. 155-156; BIBL. 11 REF.Article

ANOMALIE DU POUVOIR THERMOELECTRIQUE DES METAUX FERROMAGNETIQUES AU VOISINAGE DU POINT DE CURIEDIK EG; ABEL'SKIJ SH SH.1974; FIZ. METALLOV METALLOVED.; S.S.S.R.; DA. 1974; VOL. 37; NO 6; PP. 1305-1308; BIBL. 11 REF.Article

ELECTRON TRANSPORT IN AVALANCHING GAAS DIODESLANYON HPD.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 4; PP. 101-102; BIBL. 9 REF.Article

LATTICE STABILITY AND LIMITS TO CHARGE TRANSFER IN INTERCALATED GRAPHITEFISCHER JE; METROT A; FLANDERS PJ et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 10; PP. 5576-5580; BIBL. 29 REF.Article

MESURE DE LA LONGUEUR DE DIFFUSION DES PORTEURS DANS LES SEMICONDUCTEURS A L'AIDE D'UNE MICROSONDE ELECTRONIQUEORMONT AB.1981; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1981; NO 2; PP. 207-209; BIBL. 6 REF.Article

PARTICULARITES DISTINCTIVES DE LA PIEZORESISTANCE DU GERMANIUM ET DU SILICIUM DE TYPE N DUES A LA DIFFERENCE DES MECANISMES DE DIFFUSION DES ELECTRONS DANS CES CRISTAUXBARANSKIJ PI; KOLOMOETS VV; FEDOSOV AV et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 4; PP. 698-701; BIBL. 3 REF.Article

LOW-TEMPERATURE DIFFUSION OF ELECTRONS IN ICE. EVIDENCE FOR POLARON BANDS.PRINCE RH.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 78; NO 1; PP. 271-276; BIBL. 20 REF.Article

ELECTRIC CONDUCTION IN HEAVILY DOPED GERMANIUM.SASAKI W.1975; PROGR. THEOR. PHYS., SUPPL.; JAP.; DA. 1975; NO 57; PP. 225-230; BIBL. 8 REF.Article

MEASUREMENT OF THE DIFFUSION COEFFICIENT OF ELECTRONS IN WO3 FILMS.CRANDALL RS; FAUGHNAN BW.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 3; PP. 120-121; BIBL. 8 REF.Article

THE ENERGY RELAXATION DUE TO ELECTRON-TWO SHORT WAVE LENGTH TRANSVERSE ACOUSTIC PHONONS IN SEMICONDUCTORS.KUBAKADDI SS; KRISHNAMURTHY BS.1975; PHYS. LETTERS, A; NETHERL.; DA. 1975; VOL. 54; NO 5; PP. 389-390; BIBL. 12 REF.Article

DENSITE D'ETATS ELECTRONIQUES D'UN SUPRACONDUCTEUR A DEUX BANDES AVEC IMPURETE PARAMAGNETIQUE. LE CAS DE LA DIFFUSION AVEC ECHANGE FAIBLE ET DE LA DIFFUSION INTERBANDES FORTEBOTOSHAN NI; VLADIMIR MI; MOSKALENKO VA et al.1975; TEOR. MAT. FIZ.; S.S.S.R.; DA. 1975; VOL. 25; NO 3; PP. 382-394; ABS. ANGL.; BIBL. 13 REF.Article

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