DIFFUSION-PROFILE MEASUREMENT IN INP WITH SCHOTTKY DIODESAYTAC S; SCHLACHETZKI A.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 11; PP. 1135-1139; 4 P.; BIBL. 10 REF.Article

ETUDE DE L'INFLUENCE DES CHAMPS DES CONTRAINTES ELASTIQUES SUR LA REDISTRIBUTION PAR DIFFUSION DES IMPURETES DANS LE SILICIUMPANTELEEV VA; GUGINA TS; LEONOV VN et al.1977; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1977; VOL. 20; NO 6; PP. 124-127; BIBL. 6 REF.Article

DIFFUSION MUTUELLE DE CHAINES POLYMERES COURTES DANS UN SYSTEME DE CHAINES LONGUESBROCHARD F; JOUFFROY J; LEVINSON P et al.1983; JOURNAL DE PHYSIQUE. LETTRES; ISSN 0302-072X; FRA; DA. 1983; VOL. 44; NO 12; PP. L455-L460; ABS. ENG; BIBL. 8 REF.Article

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LOW-TEMPERATURE ZN- AND CD-DIFFUSION PROFILES IN INP AND FORMATION OF GUARD RING IN INP AVALANCHE PHOTODIODESANDO H; SUSA N; KANBE H et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 9; PP. 1408-1413; BIBL. 18 REF.Article

DEPTH PROFILES OF INTERDIFFUSING SPECIES OF HYDRATED GLASSESTSONG IST; HOUSER CA; TONG SSC et al.1980; PHYS. CHEM. GLASSES; ISSN 0031-9090; GBR; DA. 1980; VOL. 21; NO 5; PP. 197-198; BIBL. 12 REF.Article

ELECTROLYTICAL DOPING OF SILICON WITH LITHIUMANTULA J.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 4; PP. 2721-2722; BIBL. 6 REF.Article

TI DIFFUSION IN TI: LINBO₃ PLANAR AND CHANNEL OPTICAL WAVEGUIDESBURNS WK; KLEIN PH; WEST EJ et al.sdOPTICAL COMMUNICATION CONFERENCE. EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION. 5/1979/AMSTERDAM; NLD; DA. S.D.; PP. 21.1.1-21.1.4; BIBL. 4 REF.Conference Paper

SHALLOW ZINC DIFFUSION IN LIQUID PHASE EPITAXIAL GAAS AND (GAAL)AS AT 600^OCBLUM SE; SMALL MB; GUPTA D et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 1; PP. 108-110; BIBL. 14 REF.Article

PROFILS D'IMPLANTATION A HAUTE ENERGIE DE BORE DANS LE SILICIUM ET L'ARSENIURE DE GALLIUM, D'ARSENIC DANS LE SILICIUM PAR MICROANALYSE IONIQUE.GAUNEAU M.1977; ANALUSIS; FR.; DA. 1977; VOL. 5; NO 8; PP. 357-365; ABS. ANGL.; BIBL. 22 REF.Article

Profils de diffusion d'impuretés près de la surface des semiconducteurs. I. Enoncé du problème. Diffusions successivesFISTUL, V. I; SINDER, M. I.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 11, pp 1995-2002, issn 0015-3222Article

Au agglomerates observed in the out-diffusion process of supersaturated high-temperature substitutional Au in SiMOROOKA, M.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 2, pp 111-114, issn 0957-4522, 4 p.Conference Paper

A simple method of analyzing profiles in time-difference direct optical scanning gel chromatographyGROTHUSEN, J. R; ZIMMERMAN, J. K.Biophysical chemistry. 1984, Vol 20, Num 4, pp 299-304, issn 0301-4622Article

ALTERATION OF DIFFUSION PROFILES IN SEMICONDUCTORS DUE TO P-N JUNCTIONSANTHONY PJ.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 12; PP. 1171-1177; BIBL. 33 REF.Article

TI DIFFUSION IN TI: LINBO₃ PLANAR AND CHANNEL OPTICAL WAVEGUIDESBURNS WK; KLEIN PH; WEST EJ et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 10; PP. 6175-6182; BIBL. 26 REF.Article

A NEW PAINT-ON DIFFUSION SOURCE.BEYER KD.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 10; PP. 1556-1560; BIBL. 17 REF.Article

OXIDANT TRANSPORT DURING STEAM OXIDATION OF SILICONMIKKELSEN JC JR.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 11; PP. 903-905; BIBL. 13 REF.Article

A STUDY OF GOLD MIGRATION IN AU-Y₂O₃-Y JUNCTIONS BY SECONDARY ION MASS SPECTROMETRYNOYA A; KURIKI S; MATSUMOTO G et al.1979; THIN SOLID FILMS; NLD; DA. 1979; VOL. 59; NO 2; PP. 143-146; BIBL. 9 REF.Article

ACCELERATED AGING OF AL/GE AND AL/SI THIN FILM COUPLESMGBENU EN.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 65; NO 3; PP. 267-274; BIBL. 15 REF.Article

ERRORS IN CALCULATIONS OF PREDEPOSITION DIFFUSION PROFILES BY ITERATIVE NUMERICAL METHODS.HOHL JH; HAMILTON DJ.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 12; PP. 1912-1914; BIBL. 5 REF.Article

SILICON-ON-SAPPHIRE IMPURITY ANALYSIS.PHILLIPS DH.1976; NATION. BUR. STAND., SPEC. PUBL.; U.S.A.; DA. 1976; NO 400-23; PP. 73-79Article

Nonlinear two-step diffusion in semiconductorsANDERSON, D; JEPPSON, K. O.Journal of the Electrochemical Society. 1984, Vol 131, Num 11, pp 2675-2679, issn 0013-4651Article

Diffusion of phosphorus in siliconYOSHIDA, M.Japanese journal of applied physics. 1983, Vol 22, Num 9, pp 1404-1413, issn 0021-4922Article

Silicon doped with indium :a material for photopower engineeringAL'-ORAN, B. F; DADAMUKHAMEDOV, S; LAIEB, N et al.Applied solar energy. 1997, Vol 33, Num 4, pp 11-14, issn 0003-701XArticle