INERTIE DE PHOTORESISTANCE SI(ZNGLINCHUK KD; RODIONOV VE.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 7; PP. 27-31; BIBL. 7 REF.Serial Issue

SURFACE FEATURES ON ZINC-DIFFUSED INDIUM PHOSPHIDE.TUCK B; HOOPER A.1976; J. MATER. SCI.; G.B.; DA. 1976; VOL. 11; NO 3; PP. 491-499; BIBL. 12 REF.Article

ANNEALING OF ZINC-DIFFUSED GAASTUCK B; HOUGHTON AJN.1981; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1981; VOL. 14; NO 11; PP. 2147-2152; BIBL. 11 REF.Article

DIFFUSION OF ZINC INTO ION-IMPLANTED GALLIUM ARSENIDEHOUGHTON AJN; TUCK B.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 6; PP. 441-448; BIBL. 17 REF.Article

DIFFUSION PROFILES OF ZINC IN INDIUM PHOSPHIDE.TUCK B; HOOPER A.1975; J. PHYS. D; G.B.; DA. 1975; VOL. 8; NO 15; PP. 1806-1821; BIBL. 15 REF.Article

ZN DIFFUSION AND DISORDERING OF AN ALAS-GAAS SUPERLATTICE ALONG ITS LAYERSKIRCHOEFER SW; HOLONYAK N JR; COLEMAN JJ et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 766-768; BIBL. 10 REF.Article

A RADIOTRACER STUDY OF ZN DIFFUSION PROFILES OF GAP AT 900^OC.TUCK B; JAY PR.1977; J. PHYS. D; G.B.; DA. 1977; VOL. 10; NO 10; PP. 1315-1322; BIBL. 11 REF.Article

DIFFUSION DES IMPURETES RAPIDES DANS LE SILICIUMUSKOV VA.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 6; PP. 991-994; BIBL. 17 REF.Article

FORMATION OF GALLIUM INTERSTITIALS DURING ZINC DIFFUSION INTO GALLIUM ARSENIDEBALL RK; HUTCHINSON PW; DOBSON PS et al.1981; PHILOS. MAG., A; ISSN 0141-8610; GBR; DA. 1981; VOL. 43; NO 5; PP. 1299-1314; BIBL. 19 REF.Article

ENHANCED DIFFUSION OF ZN IN AL UNDER HIGH-FLUX HEAVY-ION IRRADIATIONMYERS SM; PICRAUX ST.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 11; PP. 4774-4776; BIBL. 15 REF.Article

DIFFUSION, SOLUBILITE ET ETAT DE CHARGE DU ZINC DANS LES COUCHES EPITAXIQUES DES SOLUTIONS SOLIDES DE AL_XGA_1-XASBOLTAKS BI; DZHAFAROV TD; DEMAKOV YU P et al.1975; FIZ. TEKH. POLURPOVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 5; PP. 825-829; BIBL. 9 REF.Article

EVALUATION OF PROCESSES USED TO FABRICATE LIGHT-EMITTING DIODESSUMMERS CJ; BLACK JF; REID FJ et al.1973; J. ELECTRON. MATER.; U.S.A.; DA. 1973; VOL. 2; NO 3; PP. 387-402; BIBL. 1 P 1/2Serial Issue

ZN DIFFUSION IN GAAL ASSB IN GASBCHIN R; LAW HD.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 1; PP. 227-228; BIBL. 7 REF.Article

ZN DIFFUSION IN IN_XGA_1-XAS WITH ZNAS₂ SOURCEYAMAMOTO Y; KANBE H.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 1; PP. 121-128; BIBL. 32 REF.Article

DIFFUSION DU ZINC DANS LES MASSES SILICATEESSANNIKOV YU I; FEDOTOV VM.1975; IZVEST. AKAD. NAUK S.S.S.R., METALLY; S.S.S.R.; DA. 1975; NO 6; PP. 69-74; BIBL. 20 REF.Article

OPEN TUBE DIFFUSION OF ZINC IN GALLIUM ARSENIDESHEALY JR; BALIGA BJ; GHANDHI SK et al.1980; IEEE ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 6; PP. 119-121; BIBL. 11 REF.Article

ANNEALING BEHAVIOR OF ZN-DOPED P-TYPE INSESHIGETOMI S; IKARI T; KOGA Y et al.SHIGETOMI S; 1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 5; PART. 2; PP. 254-256; BIBL. 9 REF.Article

SHALLOW AND SELECTIVE DIFFUSION OF ZINC IN INDIUM PHOSPHIDEAYTAC S; SCHLACHETZKI A.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 1; PP. 57-61; BIBL. 17 REF.Article

PHOTOLUMINESCENCE DE GAAS P DOPE PAR DIFFUSION DE ZINC DANS UN CHAMP MAGNETIQUEZVEREV LP; NEGASHEV SA; KRUZHAEV VV et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 6; PP. 1025-1029; BIBL. 13 REF.Article

GAAS_1-XP_X ELECTROLUMINESCENT DIODES MADE BY ZN DIFFUSION IN AN OPEN-TUBE SYSTEMSHIH KK; BLUM JM.1972; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1972; VOL. 119; NO 9; PP. 1258-1261; BIBL. 6 REF.Serial Issue

AN OPEN TUBE METHOD OF ZN DIFFUSION IN III-V COMPOUNDSPHATAK SB.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 5; PP. 132-134; BIBL. 8 REF.Article

CONTROL OF ZINC DIFFUSIVITY IN GAAS_0.6P_0.4 BY MULTIPLE IMPLANTATION.STONEHAM EB; GIBBONS JF.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 12; PP. 5086-5091; BIBL. 19 REF.Article

DISORDER OF AN ALAS-GAAS SUPERLATTICE BY IMPURITY DIFFUSIONLAIDIG WD; HOLONYAK N JR; CAMRAS MD et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 10; PP. 776-778; BIBL. 13 REF.Article

PLANAR ZN DIFFUSION IN INP.REZEK EA; WRIGHT PD; HOLONYAK N JR et al.1978; SOLID-STATE ELECTRON.; G.B.; DA. 1978; VOL. 21; NO 2; PP. 325-329; BIBL. 15 REF.Article

THE DIFFUSION OF ION-IMPLANTED ZINC IN GAAS_1-XP_X.MULLER G; HAUBOLD M; SCHIMKO R et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 42; NO 2; PP. 579-583; ABS. ALLEM.; BIBL. 13 REF.Article